Part Details for K4M28163PD-BG1L by Samsung Semiconductor
Overview of K4M28163PD-BG1L by Samsung Semiconductor
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- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Internet of Things (IoT)
Environmental Monitoring
Industrial Automation
Financial Technology (Fintech)
Smart Cities
Transportation and Logistics
Agriculture Technology
Telecommunications
Virtual Reality (VR), Augmented Reality (AR), and Vision Systems
Education and Research
Consumer Electronics
Security and Surveillance
Audio and Video Systems
Computing and Data Storage
Healthcare
Entertainment and Gaming
Part Details for K4M28163PD-BG1L
K4M28163PD-BG1L CAD Models
K4M28163PD-BG1L Part Data Attributes
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K4M28163PD-BG1L
Samsung Semiconductor
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Datasheet
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K4M28163PD-BG1L
Samsung Semiconductor
Synchronous DRAM, 8MX16, 7ns, CMOS, PBGA54, CSP-54
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | SAMSUNG SEMICONDUCTOR INC | |
| Part Package Code | BGA | |
| Package Description | VFBGA, BGA54,9X9,32 | |
| Pin Count | 54 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8542.32.00.02 | |
| Access Mode | FOUR BANK PAGE BURST | |
| Access Time-Max | 7 ns | |
| Additional Feature | AUTO/SELF REFRESH | |
| Clock Frequency-Max (fCLK) | 105 MHz | |
| I/O Type | COMMON | |
| Interleaved Burst Length | 1,2,4,8 | |
| JESD-30 Code | R-PBGA-B54 | |
| Length | 9.3 mm | |
| Memory Density | 134217728 bit | |
| Memory IC Type | SYNCHRONOUS DRAM | |
| Memory Width | 16 | |
| Moisture Sensitivity Level | 3 | |
| Number of Functions | 1 | |
| Number of Ports | 1 | |
| Number of Terminals | 54 | |
| Number of Words | 8388608 words | |
| Number of Words Code | 8000000 | |
| Operating Mode | SYNCHRONOUS | |
| Operating Temperature-Max | 85 °C | |
| Operating Temperature-Min | -25 °C | |
| Organization | 8MX16 | |
| Output Characteristics | 3-STATE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Code | VFBGA | |
| Package Equivalence Code | BGA54,9X9,32 | |
| Package Shape | RECTANGULAR | |
| Package Style | GRID ARRAY, VERY THIN PROFILE, FINE PITCH | |
| Peak Reflow Temperature (Cel) | 260 | |
| Qualification Status | Not Qualified | |
| Refresh Cycles | 4096 | |
| Seated Height-Max | 1 mm | |
| Self Refresh | YES | |
| Sequential Burst Length | 1,2,4,8,FP | |
| Standby Current-Max | 0.0003 A | |
| Supply Current-Max | 0.085 mA | |
| Supply Voltage-Max (Vsup) | 1.95 V | |
| Supply Voltage-Min (Vsup) | 1.65 V | |
| Supply Voltage-Nom (Vsup) | 1.8 V | |
| Surface Mount | YES | |
| Technology | CMOS | |
| Temperature Grade | OTHER | |
| Terminal Form | BALL | |
| Terminal Pitch | 0.8 mm | |
| Terminal Position | BOTTOM | |
| Width | 8.1 mm |
Alternate Parts for K4M28163PD-BG1L
This table gives cross-reference parts and alternative options found for K4M28163PD-BG1L. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of K4M28163PD-BG1L, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| K4M28163PH-BG1L0 | Synchronous DRAM, 8MX16, 7ns, CMOS, PBGA54, LEAD FREE, FBGA-54 | Samsung Semiconductor | K4M28163PD-BG1L vs K4M28163PH-BG1L0 |
| MT48H8M16LFB4-8ITTR | Synchronous DRAM, 8MX16, 7ns, CMOS, PBGA54, 8 X 8 MM, LEAD FREE, VFBGA-54 | Micron Technology Inc | K4M28163PD-BG1L vs MT48H8M16LFB4-8ITTR |
| K4M28163PD-RS1L | Synchronous DRAM, 8MX16, 7ns, CMOS, PBGA54, CSP-54 | Samsung Semiconductor | K4M28163PD-BG1L vs K4M28163PD-RS1L |
| V55C1128164MCK9 | Synchronous DRAM, 8MX16, 7ns, CMOS, PBGA54, GREEN, MO-207, FBGA-54 | ProMOS Technologies Inc | K4M28163PD-BG1L vs V55C1128164MCK9 |
| K4M28163PH-BC900 | Synchronous DRAM, 8MX16, 7ns, CMOS, PBGA54, LEAD FREE, FBGA-54 | Samsung Semiconductor | K4M28163PD-BG1L vs K4M28163PH-BC900 |
| HY5S2A6CLF-S | Synchronous DRAM, 8MX16, 7ns, CMOS, PBGA54, 8.30 X 10.50 MM, 0.80 MM PITCH, FBGA-54 | SK Hynix Inc | K4M28163PD-BG1L vs HY5S2A6CLF-S |
| K4M28163PH-BE900 | Synchronous DRAM, 8MX16, 7ns, CMOS, PBGA54, LEAD FREE, FBGA-54 | Samsung Semiconductor | K4M28163PD-BG1L vs K4M28163PH-BE900 |
| K4M28163PH-RE1L0 | Synchronous DRAM, 8MX16, 7ns, CMOS, PBGA54, FBGA-54 | Samsung Semiconductor | K4M28163PD-BG1L vs K4M28163PH-RE1L0 |
| MT48H8M16LFB4-10:J | Synchronous DRAM, 8MX16, 7ns, CMOS, PBGA54, 8 X 8 MM, LEAD FREE, VFBGA-54 | Micron Technology Inc | K4M28163PD-BG1L vs MT48H8M16LFB4-10:J |
| MT48H8M16LFF4-8IT | Synchronous DRAM, 8MX16, 6ns, CMOS, PBGA54, 8 X 8 MM, LEAD FREE, FBGA-54 | Micron Technology Inc | K4M28163PD-BG1L vs MT48H8M16LFF4-8IT |