Part Details for K4H561638F-ULB00 by Samsung Semiconductor
Overview of K4H561638F-ULB00 by Samsung Semiconductor
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (10 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Consumer Electronics
Computing and Data Storage
Part Details for K4H561638F-ULB00
K4H561638F-ULB00 CAD Models
K4H561638F-ULB00 Part Data Attributes
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K4H561638F-ULB00
Samsung Semiconductor
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Datasheet
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K4H561638F-ULB00
Samsung Semiconductor
DDR DRAM, 16MX16, 0.75ns, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, ROHS COMPLIANT, TSOP2-66
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | SAMSUNG SEMICONDUCTOR INC | |
| Part Package Code | TSOP2 | |
| Package Description | TSOP2, TSSOP66,.46 | |
| Pin Count | 66 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8542.32.00.24 | |
| Access Mode | FOUR BANK PAGE BURST | |
| Access Time-Max | 0.75 ns | |
| Additional Feature | AUTO/SELF REFRESH | |
| Clock Frequency-Max (fCLK) | 133 MHz | |
| I/O Type | COMMON | |
| Interleaved Burst Length | 2,4,8 | |
| JESD-30 Code | R-PDSO-G66 | |
| Length | 22.22 mm | |
| Memory Density | 268435456 bit | |
| Memory IC Type | DDR1 DRAM | |
| Memory Width | 16 | |
| Moisture Sensitivity Level | 2 | |
| Number of Functions | 1 | |
| Number of Ports | 1 | |
| Number of Terminals | 66 | |
| Number of Words | 16777216 words | |
| Number of Words Code | 16000000 | |
| Operating Mode | SYNCHRONOUS | |
| Operating Temperature-Max | 70 °C | |
| Operating Temperature-Min | ||
| Organization | 16MX16 | |
| Output Characteristics | 3-STATE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Code | TSOP2 | |
| Package Equivalence Code | TSSOP66,.46 | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE, THIN PROFILE | |
| Qualification Status | Not Qualified | |
| Refresh Cycles | 8192 | |
| Seated Height-Max | 1.2 mm | |
| Self Refresh | YES | |
| Sequential Burst Length | 2,4,8 | |
| Supply Current-Max | 0.3 mA | |
| Supply Voltage-Max (Vsup) | 2.7 V | |
| Supply Voltage-Min (Vsup) | 2.3 V | |
| Supply Voltage-Nom (Vsup) | 2.5 V | |
| Surface Mount | YES | |
| Technology | CMOS | |
| Temperature Grade | COMMERCIAL | |
| Terminal Form | GULL WING | |
| Terminal Pitch | 0.65 mm | |
| Terminal Position | DUAL | |
| Width | 10.16 mm |
Alternate Parts for K4H561638F-ULB00
This table gives cross-reference parts and alternative options found for K4H561638F-ULB00. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of K4H561638F-ULB00, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| M2S56D40ATP-75UL | DDR DRAM, 16MX16, 0.75ns, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, TSOP2-66 | Elpida Memory Inc | K4H561638F-ULB00 vs M2S56D40ATP-75UL |
| MT46V16M16P-75ZL | DDR DRAM, 16MX16, 0.75ns, CMOS, PDSO66, 0.400 INCH, LEAD FREE, PLASTIC, TSOP-66 | Micron Technology Inc | K4H561638F-ULB00 vs MT46V16M16P-75ZL |
| NT5DS16M16BS-75B | DDR DRAM, 16MX16, 0.75ns, CMOS, PDSO66, 0.400 INCH, LEAD AND HALOGEN FREE, PLASTIC, TSOP2-66 | Nanya Technology Corporation | K4H561638F-ULB00 vs NT5DS16M16BS-75B |
| MT46V16M16D2TG-75 | DDR DRAM, 16MX16, 0.75ns, CMOS, PDSO66, 0.400 INCH, 0.65 MM PITCH, PLASTIC, TSOP-66 | Micron Technology Inc | K4H561638F-ULB00 vs MT46V16M16D2TG-75 |
| M2S56D40ATP-75AL | DDR DRAM, 16MX16, 0.75ns, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, TSOP2-66 | Mitsubishi Electric | K4H561638F-ULB00 vs M2S56D40ATP-75AL |
| MT46V16M16TG-75ELH | DDR DRAM, 16MX16, 0.75ns, CMOS, PDSO66, 0.400 INCH, PLASTIC, TSOP-66 | Micron Technology Inc | K4H561638F-ULB00 vs MT46V16M16TG-75ELH |
| EDD2516AKTA-7A | DDR DRAM, 16MX16, 0.75ns, CMOS, PDSO66, PLASTIC, TSOP2-66 | Elpida Memory Inc | K4H561638F-ULB00 vs EDD2516AKTA-7A |
| NT5DS16M16BT-75B | DDR DRAM, 16MX16, 0.75ns, CMOS, PDSO66, 0.400 INCH, PLASTIC, TSOP2-66 | Nanya Technology Corporation | K4H561638F-ULB00 vs NT5DS16M16BT-75B |
| MT46V16M16TG-75E:C | DDR DRAM, 16MX16, 0.75ns, CMOS, PDSO66, 0.400 INCH, PLASTIC, TSOP-66 | Micron Technology Inc | K4H561638F-ULB00 vs MT46V16M16TG-75E:C |
| HY5DU561622ELTP-K | DDR DRAM, 16MX16, 0.75ns, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, ROHS COMPLIANT, TSOP2-66 | SK Hynix Inc | K4H561638F-ULB00 vs HY5DU561622ELTP-K |