Memory
K4H561638F-UCCC0
Samsung Semiconductor
Description: DDR DRAM, 16MX16, 0.65ns, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, ROHS COMPLIANT, TSOP2-66

Overview of K4H561638F-UCCC0 by Samsung Semiconductor

Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Where used in Applications: Consumer Electronics Computing and Data Storage

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Part Data Attributes for K4H561638F-UCCC0 by Samsung Semiconductor

K4H561638F-UCCC0
Samsung Semiconductor
-
-
Rohs Code
Yes
Part Life Cycle Code
Obsolete
Ihs Manufacturer
SAMSUNG SEMICONDUCTOR INC
Part Package Code
TSOP2
Package Description
TSOP2, TSSOP66,.46
Pin Count
66
Reach Compliance Code
compliant
ECCN Code
EAR99
HTS Code
8542.32.00.24
Access Mode
FOUR BANK PAGE BURST
Access Time-Max
0.65 ns
Additional Feature
AUTO/SELF REFRESH
Clock Frequency-Max (fCLK)
200 MHz
I/O Type
COMMON
Interleaved Burst Length
2,4,8
JESD-30 Code
R-PDSO-G66
JESD-609 Code
e6
Length
22.22 mm
Memory Density
268435456 bit
Memory IC Type
DDR1 DRAM
Memory Width
16
Moisture Sensitivity Level
3
Number of Functions
1
Number of Ports
1
Number of Terminals
66
Number of Words
16777216 words
Number of Words Code
16000000
Operating Mode
SYNCHRONOUS
Operating Temperature-Max
70 °C
Operating Temperature-Min
Organization
16MX16
Output Characteristics
3-STATE
Package Body Material
PLASTIC/EPOXY
Package Code
TSOP2
Package Equivalence Code
TSSOP66,.46
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE, THIN PROFILE
Qualification Status
Not Qualified
Refresh Cycles
8192
Seated Height-Max
1.2 mm
Self Refresh
YES
Sequential Burst Length
2,4,8
Supply Current-Max
0.38 mA
Supply Voltage-Max (Vsup)
2.7 V
Supply Voltage-Min (Vsup)
2.5 V
Supply Voltage-Nom (Vsup)
2.6 V
Surface Mount
YES
Technology
CMOS
Temperature Grade
COMMERCIAL
Terminal Finish
TIN BISMUTH
Terminal Form
GULL WING
Terminal Pitch
0.65 mm
Terminal Position
DUAL
Width
10.16 mm
Want to compare parts?
  1. K4H561638F-UCCC0
    Samsung Semiconductor
    DDR DRAM, 16MX16, 0.65ns, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, ROHS COMPLIANT, TSOP2-66
    VS

Alternate Parts for K4H561638F-UCCC0

This table gives cross-reference parts and alternative options found for K4H561638F-UCCC0. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of K4H561638F-UCCC0, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
NT5DS16M16BT-5T DDR DRAM, 16MX16, 0.65ns, CMOS, PDSO66, 0.400 INCH, PLASTIC, TSOP2-66 Nanya Technology Corporation K4H561638F-UCCC0 vs NT5DS16M16BT-5T
K4H561638F-TLCC0 DDR DRAM, 16MX16, 0.65ns, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, TSOP2-66 Samsung Semiconductor K4H561638F-UCCC0 vs K4H561638F-TLCC0
K4H561638F-TCCC0 DDR DRAM, 16MX16, 0.65ns, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, TSOP2-66 Samsung Semiconductor K4H561638F-UCCC0 vs K4H561638F-TCCC0
NT5DS16M16BS-5T DDR DRAM, 16MX16, 0.65ns, CMOS, PDSO66, 0.400 INCH, LEAD AND HALOGEN FREE, PLASTIC, TSOP2-66 Nanya Technology Corporation K4H561638F-UCCC0 vs NT5DS16M16BS-5T
Part Number Description Manufacturer Compare
V58C2256164SCLT5D DDR DRAM, 16MX16, 0.65ns, CMOS, PDSO66, 0.400 X 0.875 INCH, MS-024FC, TSOP2-66 ProMOS Technologies Inc K4H561638F-UCCC0 vs V58C2256164SCLT5D
V58C2256164SAI-5 DDR DRAM, 16MX16, 0.65ns, CMOS, PDSO66, 0.400 X 0.875 INCH, GREEN, PLASTIC, MS-024FC, TSOP2-66 ProMOS Technologies Inc K4H561638F-UCCC0 vs V58C2256164SAI-5
K4H561638F-TCCC0 DDR DRAM, 16MX16, 0.65ns, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, TSOP2-66 Samsung Semiconductor K4H561638F-UCCC0 vs K4H561638F-TCCC0
N2DS25616CS-5T DDR DRAM, 16MX16, 0.65ns, CMOS, PDSO66, 0.400 INCH, GREEN, PLASTIC, TSOP2-66 Nanya Technology Corporation K4H561638F-UCCC0 vs N2DS25616CS-5T
HY5DU561622DT-D4 DDR DRAM, 16MX16, 0.65ns, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, TSOP2-66 SK Hynix Inc K4H561638F-UCCC0 vs HY5DU561622DT-D4
V58C2256164SCT5 DDR DRAM, 16MX16, 0.65ns, CMOS, PDSO66, 0.400 X 0.875 INCH, MS-024FC, TSOP2-66 ProMOS Technologies Inc K4H561638F-UCCC0 vs V58C2256164SCT5
V58C2256164SCLI5B DDR DRAM, 16MX16, 0.65ns, CMOS, PDSO66, 0.400 X 0.875 INCH, GREEN, PLASTIC, MS-024FC, TSOP2-66 ProMOS Technologies Inc K4H561638F-UCCC0 vs V58C2256164SCLI5B
V58C2256164SAD-5B DDR DRAM, 16MX16, 0.65ns, CMOS, PDSO66, DIE-STACKED, TSOP2-66 ProMOS Technologies Inc K4H561638F-UCCC0 vs V58C2256164SAD-5B
V58C2256164SCLT5BI DDR DRAM, 16MX16, 0.65ns, CMOS, PDSO66, 0.400 X 0.875 INCH, PLASTIC, MS-024FC, TSOP2-66 ProMOS Technologies Inc K4H561638F-UCCC0 vs V58C2256164SCLT5BI
V58C2256164SCLT5B DDR DRAM, 16MX16, 0.65ns, CMOS, PDSO66, 0.400 X 0.875 INCH, MS-024FC, TSOP2-66 ProMOS Technologies Inc K4H561638F-UCCC0 vs V58C2256164SCLT5B

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