Part Details for K4H561638F-UCC4 by Samsung Semiconductor
Overview of K4H561638F-UCC4 by Samsung Semiconductor
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (9 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
Computing and Data Storage
Available Datasheets
| Part # | Manufacturer | Description | Datasheet |
|---|---|---|---|
| UCC44273DBVR | Texas Instruments | 4-A/4-A single-channel low-side gate driver with 5-V UVLO 5-SOT-23 -40 to 140 |
Part Details for K4H561638F-UCC4
K4H561638F-UCC4 CAD Models
K4H561638F-UCC4 Part Data Attributes
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K4H561638F-UCC4
Samsung Semiconductor
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Datasheet
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K4H561638F-UCC4
Samsung Semiconductor
DDR DRAM, 16MX16, 0.65ns, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, ROHS COMPLIANT, TSOP2-66
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | SAMSUNG SEMICONDUCTOR INC | |
| Package Description | TSOP2, TSSOP66,.46 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8542.32.00.24 | |
| Access Mode | FOUR BANK PAGE BURST | |
| Access Time-Max | 0.65 ns | |
| Additional Feature | AUTO/SELF REFRESH | |
| Clock Frequency-Max (fCLK) | 200 MHz | |
| I/O Type | COMMON | |
| Interleaved Burst Length | 2,4,8 | |
| JESD-30 Code | R-PDSO-G66 | |
| Length | 22.22 mm | |
| Memory Density | 268435456 bit | |
| Memory IC Type | DDR1 DRAM | |
| Memory Width | 16 | |
| Moisture Sensitivity Level | 3 | |
| Number of Functions | 1 | |
| Number of Ports | 1 | |
| Number of Terminals | 66 | |
| Number of Words | 16777216 words | |
| Number of Words Code | 16000000 | |
| Operating Mode | SYNCHRONOUS | |
| Operating Temperature-Max | 70 °C | |
| Operating Temperature-Min | ||
| Organization | 16MX16 | |
| Output Characteristics | 3-STATE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Code | TSOP2 | |
| Package Equivalence Code | TSSOP66,.46 | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE, THIN PROFILE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Qualification Status | Not Qualified | |
| Refresh Cycles | 8192 | |
| Seated Height-Max | 1.2 mm | |
| Self Refresh | YES | |
| Sequential Burst Length | 2,4,8 | |
| Supply Voltage-Max (Vsup) | 2.7 V | |
| Supply Voltage-Min (Vsup) | 2.5 V | |
| Supply Voltage-Nom (Vsup) | 2.6 V | |
| Surface Mount | YES | |
| Technology | CMOS | |
| Temperature Grade | COMMERCIAL | |
| Terminal Form | GULL WING | |
| Terminal Pitch | 0.65 mm | |
| Terminal Position | DUAL | |
| Width | 10.16 mm |
Alternate Parts for K4H561638F-UCC4
This table gives cross-reference parts and alternative options found for K4H561638F-UCC4. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of K4H561638F-UCC4, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| K4H561638D-TCCC | Samsung Semiconductor | Check for Price | DDR DRAM, 16MX16, 0.65ns, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, TSOP2-66 | K4H561638F-UCC4 vs K4H561638D-TCCC |
| NT5DS16M16BT-5T | Nanya Technology Corporation | Check for Price | DDR DRAM, 16MX16, 0.65ns, CMOS, PDSO66, 0.400 INCH, PLASTIC, TSOP2-66 | K4H561638F-UCC4 vs NT5DS16M16BT-5T |
| NT5DS16M16CS-5T | Nanya Technology Corporation | Check for Price | DDR DRAM, 16MX16, 0.65ns, CMOS, PDSO66, 0.400 INCH, GREEN, PLASTIC, TSOP2-66 | K4H561638F-UCC4 vs NT5DS16M16CS-5T |
| K4H561638F-ULCC | Samsung Semiconductor | Check for Price | DDR DRAM, 16MX16, CMOS, PDSO66, | K4H561638F-UCC4 vs K4H561638F-ULCC |
| NT5DS16M16BS-5T | Nanya Technology Corporation | Check for Price | DDR DRAM, 16MX16, 0.65ns, CMOS, PDSO66, 0.400 INCH, LEAD AND HALOGEN FREE, PLASTIC, TSOP2-66 | K4H561638F-UCC4 vs NT5DS16M16BS-5T |
| K4H561638F-TCCC0 | Samsung Semiconductor | Check for Price | DDR DRAM, 16MX16, 0.65ns, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, TSOP2-66 | K4H561638F-UCC4 vs K4H561638F-TCCC0 |
| K4H561638D-TCC4 | Samsung Semiconductor | Check for Price | DDR DRAM, 16MX16, 0.65ns, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, TSOP2-66 | K4H561638F-UCC4 vs K4H561638D-TCC4 |
| NT5DS16M16BT-5 | Nanya Technology Corporation | Check for Price | DDR DRAM, 16MX16, 0.6ns, CMOS, PDSO66, 0.400 INCH, PLASTIC, TSOP2-66 | K4H561638F-UCC4 vs NT5DS16M16BT-5 |
| NT5DS16M16CT-5T | Nanya Technology Corporation | Check for Price | DDR DRAM, 16MX16, 0.65ns, CMOS, PDSO66, 0.400 INCH, PLASTIC, TSOP2-66 | K4H561638F-UCC4 vs NT5DS16M16CT-5T |