Datasheets
K4H560838E-ZLA20 by: Samsung Semiconductor

DDR DRAM, 32MX8, 0.75ns, CMOS, PBGA60, ROHS COMPLIANT, FBGA-60

Part Details for K4H560838E-ZLA20 by Samsung Semiconductor

Overview of K4H560838E-ZLA20 by Samsung Semiconductor

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Applications Consumer Electronics Computing and Data Storage

Part Details for K4H560838E-ZLA20

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K4H560838E-ZLA20 Part Data Attributes

K4H560838E-ZLA20 Samsung Semiconductor
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K4H560838E-ZLA20 Samsung Semiconductor DDR DRAM, 32MX8, 0.75ns, CMOS, PBGA60, ROHS COMPLIANT, FBGA-60
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer SAMSUNG SEMICONDUCTOR INC
Part Package Code BGA
Package Description TBGA,
Pin Count 60
Reach Compliance Code compliant
ECCN Code EAR99
HTS Code 8542.32.00.24
Access Mode FOUR BANK PAGE BURST
Access Time-Max 0.75 ns
Additional Feature AUTO/SELF REFRESH
JESD-30 Code R-PBGA-B60
JESD-609 Code e1
Length 14 mm
Memory Density 268435456 bit
Memory IC Type DDR1 DRAM
Memory Width 8
Moisture Sensitivity Level 2
Number of Functions 1
Number of Ports 1
Number of Terminals 60
Number of Words 33554432 words
Number of Words Code 32000000
Operating Mode SYNCHRONOUS
Operating Temperature-Max 70 °C
Operating Temperature-Min
Organization 32MX8
Package Body Material PLASTIC/EPOXY
Package Code TBGA
Package Shape RECTANGULAR
Package Style GRID ARRAY, THIN PROFILE
Qualification Status Not Qualified
Seated Height-Max 1.2 mm
Self Refresh YES
Supply Voltage-Max (Vsup) 2.7 V
Supply Voltage-Min (Vsup) 2.3 V
Supply Voltage-Nom (Vsup) 2.5 V
Surface Mount YES
Technology CMOS
Temperature Grade COMMERCIAL
Terminal Finish TIN SILVER COPPER
Terminal Form BALL
Terminal Pitch 1 mm
Terminal Position BOTTOM
Width 8 mm

Alternate Parts for K4H560838E-ZLA20

This table gives cross-reference parts and alternative options found for K4H560838E-ZLA20. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of K4H560838E-ZLA20, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
K4H560838E-GLB00 DDR DRAM, 32MX8, 0.75ns, CMOS, PBGA60, FBGA-60 Samsung Semiconductor K4H560838E-ZLA20 vs K4H560838E-GLB00
MT46V32M8FG-75ZLITH DDR DRAM, 32MX8, 0.75ns, CMOS, PBGA60, 14 X 8 MM, PLASTIC, FBGA-60 Micron Technology Inc K4H560838E-ZLA20 vs MT46V32M8FG-75ZLITH
K4H560838E-GCAA DDR DRAM, 32MX8, 0.75ns, CMOS, PBGA60, FBGA-60 Samsung Semiconductor K4H560838E-ZLA20 vs K4H560838E-GCAA
MT46V32M8BG-75ELH DDR DRAM, 32MX8, 0.75ns, CMOS, PBGA60, 14 X 8 MM, PLASTIC, FBGA-60 Micron Technology Inc K4H560838E-ZLA20 vs MT46V32M8BG-75ELH
MT46V32M8FG-75LITH DDR DRAM, 32MX8, 0.75ns, CMOS, PBGA60, 14 X 8 MM, PLASTIC, FBGA-60 Micron Technology Inc K4H560838E-ZLA20 vs MT46V32M8FG-75LITH
MT46V32M8CE-6:G DDR DRAM, 32MX8, 0.75ns, CMOS, PBGA60, 8 X 14 MM, LEAD FREE, PLASTIC, FBGA-60 Micron Technology Inc K4H560838E-ZLA20 vs MT46V32M8CE-6:G
MT46V32M8BG-75ZH DDR DRAM, 32MX8, 0.75ns, CMOS, PBGA60, 14 X 8 MM, PLASTIC, FBGA-60 Micron Technology Inc K4H560838E-ZLA20 vs MT46V32M8BG-75ZH
MT46V32M8BG-75LITH DDR DRAM, 32MX8, 0.75ns, CMOS, PBGA60, 14 X 8 MM, PLASTIC, FBGA-60 Micron Technology Inc K4H560838E-ZLA20 vs MT46V32M8BG-75LITH
K4H560838E-ZCB00 DDR DRAM, 32MX8, 0.75ns, CMOS, PBGA60, ROHS COMPLIANT, FBGA-60 Samsung Semiconductor K4H560838E-ZLA20 vs K4H560838E-ZCB00
K4H560838E-GLA20 DDR DRAM, 32MX8, 0.75ns, CMOS, PBGA60, FBGA-60 Samsung Semiconductor K4H560838E-ZLA20 vs K4H560838E-GLA20
Part Number Description Manufacturer Compare
MT46V32M8P-75ZIT DDR DRAM, 32MX8, 0.75ns, CMOS, PDSO66, 0.400 INCH, LEAD FREE, PLASTIC, TSOP-66 Micron Technology Inc K4H560838E-ZLA20 vs MT46V32M8P-75ZIT
MT46V32M8FG-75Z:G DDR DRAM, 32MX8, 0.75ns, CMOS, PBGA60, (8 X 14) MM, PLASTIC, FBGA-60 Micron Technology Inc K4H560838E-ZLA20 vs MT46V32M8FG-75Z:G
IS43R83200A-75T DDR DRAM, 32MX8, 0.75ns, CMOS, PDSO66, 0.400 INCH X 0.875 INCH, 0.65 MM PITCH, TSOP2-66 Integrated Silicon Solution Inc K4H560838E-ZLA20 vs IS43R83200A-75T
MT46V32M8P-75E DDR DRAM, 32MX8, 0.75ns, CMOS, PDSO66, 0.400 INCH, LEAD FREE, PLASTIC, TSOP-66 Micron Technology Inc K4H560838E-ZLA20 vs MT46V32M8P-75E
NT5DS32M8AT-7K DDR DRAM, 32MX8, 0.75ns, CMOS, PDSO66, 0.400 INCH, PLASTIC, TSOP2-66 Nanya Technology Corporation K4H560838E-ZLA20 vs NT5DS32M8AT-7K
HY5DU56822CLT-M DDR DRAM, 32MX8, 0.75ns, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, TSOP2-66 SK Hynix Inc K4H560838E-ZLA20 vs HY5DU56822CLT-M
MT46V32M8BG-75EL:G DDR DRAM, 64MX8, 0.75ns, CMOS, PBGA60, (8 X 14) MM, LEAD FREE,PLASTIC, FBGA-60 Micron Technology Inc K4H560838E-ZLA20 vs MT46V32M8BG-75EL:G
V58C2256804SAS-7 DDR DRAM, 32MX8, 0.75ns, CMOS, PBGA60, MO-233, FBGA-60 ProMOS Technologies Inc K4H560838E-ZLA20 vs V58C2256804SAS-7
HYB25D256800BC-7 DDR DRAM, 32MX8, 0.75ns, CMOS, PBGA60, 12 X 8 MM, PLASTIC, TFBGA-60 Infineon Technologies AG K4H560838E-ZLA20 vs HYB25D256800BC-7
MT46V32M8P-75IT:G DDR DRAM, 32MX8, 0.75ns, CMOS, PDSO66, 0.40 INCH, LEAD FREE,PLASTIC, TSOP-66 Micron Technology Inc K4H560838E-ZLA20 vs MT46V32M8P-75IT:G

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