Part Details for K4H560438E-VCB0 by Samsung Semiconductor
Overview of K4H560438E-VCB0 by Samsung Semiconductor
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (10 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Computing and Data Storage
Part Details for K4H560438E-VCB0
K4H560438E-VCB0 CAD Models
K4H560438E-VCB0 Part Data Attributes
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K4H560438E-VCB0
Samsung Semiconductor
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Datasheet
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K4H560438E-VCB0
Samsung Semiconductor
DDR DRAM, 64MX4, 0.75ns, CMOS, PDSO54
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | SAMSUNG SEMICONDUCTOR INC | |
| Package Description | TSSOP, TSSOP54,.36,20 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8542.32.00.24 | |
| Access Time-Max | 0.75 ns | |
| Clock Frequency-Max (fCLK) | 133 MHz | |
| I/O Type | COMMON | |
| Interleaved Burst Length | 2,4,8 | |
| JESD-30 Code | R-PDSO-G54 | |
| JESD-609 Code | e3 | |
| Memory Density | 268435456 bit | |
| Memory IC Type | DDR1 DRAM | |
| Memory Width | 4 | |
| Moisture Sensitivity Level | 1 | |
| Number of Terminals | 54 | |
| Number of Words | 67108864 words | |
| Number of Words Code | 64000000 | |
| Operating Temperature-Max | 70 °C | |
| Operating Temperature-Min | ||
| Organization | 64MX4 | |
| Output Characteristics | 3-STATE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Code | TSSOP | |
| Package Equivalence Code | TSSOP54,.36,20 | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE, THIN PROFILE, SHRINK PITCH | |
| Qualification Status | Not Qualified | |
| Refresh Cycles | 8192 | |
| Sequential Burst Length | 2,4,8 | |
| Standby Current-Max | 0.003 A | |
| Supply Current-Max | 0.24 mA | |
| Supply Voltage-Nom (Vsup) | 2.5 V | |
| Surface Mount | YES | |
| Technology | CMOS | |
| Temperature Grade | COMMERCIAL | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | GULL WING | |
| Terminal Pitch | 0.5 mm | |
| Terminal Position | DUAL |
Alternate Parts for K4H560438E-VCB0
This table gives cross-reference parts and alternative options found for K4H560438E-VCB0. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of K4H560438E-VCB0, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| K4H560438D-NCA2 | DDR DRAM, 64MX4, 0.75ns, CMOS, PDSO54, 0.300 X 0.551 INCH, 0.50 MM PITCH, STSOP2-54 | Samsung Semiconductor | K4H560438E-VCB0 vs K4H560438D-NCA2 |
| K4H560438D-NLB0 | DDR DRAM, 64MX4, 0.75ns, CMOS, PDSO54, 0.300 X 0.551 INCH, 0.50 MM PITCH, STSOP2-54 | Samsung Semiconductor | K4H560438E-VCB0 vs K4H560438D-NLB0 |
| K4H560438E-NCA20 | DDR DRAM, 64MX4, 0.75ns, CMOS, PDSO54, 0.300 X 0.551 INCH, 0.50 MM PITCH, STSOP2-54 | Samsung Semiconductor | K4H560438E-VCB0 vs K4H560438E-NCA20 |
| K4H560438E-NCA2T | Cache DRAM Module, 64MX4, 0.75ns, CMOS, PDSO54 | Samsung Semiconductor | K4H560438E-VCB0 vs K4H560438E-NCA2T |
| K4H560438E-NLB00 | DDR DRAM, 64MX4, 0.75ns, CMOS, PDSO54, 0.300 X 0.551 INCH, 0.50 MM PITCH, STSOP2-54 | Samsung Semiconductor | K4H560438E-VCB0 vs K4H560438E-NLB00 |
| K4H560438E-VCA2 | DDR DRAM, 64MX4, 0.75ns, CMOS, PDSO54 | Samsung Semiconductor | K4H560438E-VCB0 vs K4H560438E-VCA2 |
| K4H560438E-NCB00 | DDR DRAM, 64MX4, 0.75ns, CMOS, PDSO54, 0.300 X 0.551 INCH, 0.50 MM PITCH, STSOP2-54 | Samsung Semiconductor | K4H560438E-VCB0 vs K4H560438E-NCB00 |
| K4H560438E-NCB0T | Cache DRAM Module, 64MX4, 0.75ns, CMOS, PDSO54 | Samsung Semiconductor | K4H560438E-VCB0 vs K4H560438E-NCB0T |
| K4H560438E-VLB0 | DDR DRAM, 64MX4, 0.75ns, CMOS, PDSO54 | Samsung Semiconductor | K4H560438E-VCB0 vs K4H560438E-VLB0 |
| K4H560438E-VLA2 | DDR DRAM, 64MX4, 0.75ns, CMOS, PDSO54 | Samsung Semiconductor | K4H560438E-VCB0 vs K4H560438E-VLA2 |