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Memory DRAMs K4H560438E-TCA20

Memory
K4H560438E-TCA20
Samsung Semiconductor
Description: DDR DRAM, 64MX4, 0.75ns, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, TSOP2-66

Overview of K4H560438E-TCA20 by Samsung Semiconductor

Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Where used in Applications: Computing and Data Storage

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Part Data Attributes for K4H560438E-TCA20 by Samsung Semiconductor
Parametric Data

K4H560438E-TCA20
Samsung Semiconductor
Buy Now
-
-
Rohs Code
No
Part Life Cycle Code
Obsolete
Ihs Manufacturer
SAMSUNG SEMICONDUCTOR INC
Part Package Code
TSOP2
Package Description
TSOP2, TSSOP66,.46
Pin Count
66
Reach Compliance Code
compliant
ECCN Code
EAR99
HTS Code
8542.32.00.24
Access Mode
FOUR BANK PAGE BURST
Access Time-Max
0.75 ns
Additional Feature
AUTO/SELF REFRESH
Clock Frequency-Max (fCLK)
133 MHz
I/O Type
COMMON
Interleaved Burst Length
2,4,8
JESD-30 Code
R-PDSO-G66
JESD-609 Code
e0
Length
22.22 mm
Memory Density
268435456 bit
Memory IC Type
DDR1 DRAM
Memory Width
4
Number of Functions
1
Number of Ports
1
Number of Terminals
66
Number of Words
67108864 words
Number of Words Code
64000000
Operating Mode
SYNCHRONOUS
Operating Temperature-Max
70 °C
Operating Temperature-Min
Organization
64MX4
Output Characteristics
3-STATE
Package Body Material
PLASTIC/EPOXY
Package Code
TSOP2
Package Equivalence Code
TSSOP66,.46
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE, THIN PROFILE
Qualification Status
Not Qualified
Refresh Cycles
8192
Seated Height-Max
1.2 mm
Self Refresh
YES
Sequential Burst Length
2,4,8
Standby Current-Max
0.003 A
Supply Current-Max
0.24 mA
Supply Voltage-Max (Vsup)
2.7 V
Supply Voltage-Min (Vsup)
2.3 V
Supply Voltage-Nom (Vsup)
2.5 V
Surface Mount
YES
Technology
CMOS
Temperature Grade
COMMERCIAL
Terminal Finish
TIN LEAD
Terminal Form
GULL WING
Terminal Pitch
0.65 mm
Terminal Position
DUAL
Width
10.16 mm
Want to compare parts?
  1. K4H560438E-TCA20
    Samsung Semiconductor
    DDR DRAM, 64MX4, 0.75ns, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, TSOP2-66
    VS

Alternate Parts for K4H560438E-TCA20

This table gives cross-reference parts and alternative options found for K4H560438E-TCA20. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of K4H560438E-TCA20, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
K4H560438E-TLB00 DDR DRAM, 64MX4, 0.75ns, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, TSOP2-66 Samsung Semiconductor K4H560438E-TCA20 vs K4H560438E-TLB00
K4H560438E-ULB0 DDR DRAM, 64MX4, 0.75ns, CMOS, PDSO66 Samsung Semiconductor K4H560438E-TCA20 vs K4H560438E-ULB0
K4H560438E-ULB00 DDR DRAM, 64MX4, 0.75ns, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, ROHS COMPLIANT, TSOP2-66 Samsung Semiconductor K4H560438E-TCA20 vs K4H560438E-ULB00
K4H560438E-UCB0 DDR DRAM, 64MX4, 0.75ns, CMOS, PDSO66 Samsung Semiconductor K4H560438E-TCA20 vs K4H560438E-UCB0
K4H560438E-TLA2 DDR DRAM, 64MX4, 0.75ns, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, TSOP2-66 Samsung Semiconductor K4H560438E-TCA20 vs K4H560438E-TLA2
K4H560438E-TLB0 DDR DRAM, 64MX4, 0.75ns, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, TSOP2-66 Samsung Semiconductor K4H560438E-TCA20 vs K4H560438E-TLB0
K4H560438E-ULA2 DDR DRAM, 64MX4, 0.75ns, CMOS, PDSO66 Samsung Semiconductor K4H560438E-TCA20 vs K4H560438E-ULA2
K4H560438E-UCB00 DDR DRAM, 64MX4, 0.75ns, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, ROHS COMPLIANT, TSOP2-66 Samsung Semiconductor K4H560438E-TCA20 vs K4H560438E-UCB00
K4H560438E-TCA2 DDR DRAM, 64MX4, 0.75ns, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, TSOP2-66 Samsung Semiconductor K4H560438E-TCA20 vs K4H560438E-TCA2
K4H560438E-UCA2 DDR DRAM, 64MX4, 0.75ns, CMOS, PDSO66 Samsung Semiconductor K4H560438E-TCA20 vs K4H560438E-UCA2
Part Number Description Manufacturer Compare
K4H560438D-TCB0 DDR DRAM, 64MX4, 0.75ns, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, TSOP2-66 Samsung Semiconductor K4H560438E-TCA20 vs K4H560438D-TCB0
MT46V64M4TG-6RL DDR DRAM, 64MX4, 0.7ns, CMOS, PDSO66, 0.400 INCH, PLASTIC, TSOP-66 Micron Technology Inc K4H560438E-TCA20 vs MT46V64M4TG-6RL
V58C2256404SHUE5E DDR DRAM, 64MX4, CMOS, PDSO66, 0.400 INCH, ROHS COMPLIANT, PLASTIC, MS-024FC, TSOP2-66 ProMOS Technologies Inc K4H560438E-TCA20 vs V58C2256404SHUE5E
MT46V64M4P-75ELH DDR DRAM, 64MX4, 0.75ns, CMOS, PDSO66, 0.400 INCH, PLASTIC, TSOP-66 Micron Technology Inc K4H560438E-TCA20 vs MT46V64M4P-75ELH
MT46V64M4P-5BLAT:K DDR DRAM, 64MX4, 0.7ns, CMOS, PDSO66, 0.40 INCH, LEAD FREE,PLASTIC, TSOP-66 Micron Technology Inc K4H560438E-TCA20 vs MT46V64M4P-5BLAT:K
K4H560438E-TLB0 DDR DRAM, 64MX4, 0.75ns, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, TSOP2-66 Samsung Semiconductor K4H560438E-TCA20 vs K4H560438E-TLB0
K4H560438D-TLA20 DDR DRAM, 64MX4, 0.75ns, CMOS, PDSO66, 0.400 X 0.875, 0.65 MM PITCH, MS-024FC, TSOP2-66 Samsung Semiconductor K4H560438E-TCA20 vs K4H560438D-TLA20
MT46V64M4P-6TH DDR DRAM, 64MX4, 0.7ns, CMOS, PDSO66, 0.400 INCH, PLASTIC, TSOP-66 Micron Technology Inc K4H560438E-TCA20 vs MT46V64M4P-6TH
V58C2256404SAI-6 DDR DRAM, 64MX4, 0.7ns, CMOS, PDSO66, 0.400 X 0.875 INCH, GREEN, PLASTIC, MS-024FC, TSOP2-66 ProMOS Technologies Inc K4H560438E-TCA20 vs V58C2256404SAI-6
M2S56D20ATP-75L DDR DRAM, 64MX4, 0.75ns, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, TSOP2-66 Elpida Memory Inc K4H560438E-TCA20 vs M2S56D20ATP-75L

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