Part Details for K4H511638J-LIB30 by Samsung Semiconductor
Overview of K4H511638J-LIB30 by Samsung Semiconductor
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (10 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Part Details for K4H511638J-LIB30
K4H511638J-LIB30 CAD Models
K4H511638J-LIB30 Part Data Attributes
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K4H511638J-LIB30
Samsung Semiconductor
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K4H511638J-LIB30
Samsung Semiconductor
DDR DRAM, 32MX16, 0.7ns, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, HALOGEN FREE AND ROHS COMPLIANT, TSOP2-66
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | SAMSUNG SEMICONDUCTOR INC | |
| Part Package Code | TSOP2 | |
| Package Description | TSOP2, TSSOP66,.46 | |
| Pin Count | 66 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8542.32.00.28 | |
| Access Mode | FOUR BANK PAGE BURST | |
| Access Time-Max | 0.7 ns | |
| Additional Feature | AUTO/SELF REFRESH | |
| Clock Frequency-Max (fCLK) | 166 MHz | |
| I/O Type | COMMON | |
| Interleaved Burst Length | 2,4,8 | |
| JESD-30 Code | R-PDSO-G66 | |
| Length | 22.22 mm | |
| Memory Density | 536870912 bit | |
| Memory IC Type | DDR1 DRAM | |
| Memory Width | 16 | |
| Number of Functions | 1 | |
| Number of Ports | 1 | |
| Number of Terminals | 66 | |
| Number of Words | 33554432 words | |
| Number of Words Code | 32000000 | |
| Operating Mode | SYNCHRONOUS | |
| Operating Temperature-Max | 85 °C | |
| Operating Temperature-Min | -40 °C | |
| Organization | 32MX16 | |
| Output Characteristics | 3-STATE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Code | TSOP2 | |
| Package Equivalence Code | TSSOP66,.46 | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE, THIN PROFILE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Qualification Status | Not Qualified | |
| Refresh Cycles | 8192 | |
| Seated Height-Max | 1.2 mm | |
| Self Refresh | YES | |
| Sequential Burst Length | 2,4,8 | |
| Standby Current-Max | 0.005 A | |
| Supply Current-Max | 0.2 mA | |
| Supply Voltage-Max (Vsup) | 2.7 V | |
| Supply Voltage-Min (Vsup) | 2.3 V | |
| Supply Voltage-Nom (Vsup) | 2.5 V | |
| Surface Mount | YES | |
| Technology | CMOS | |
| Temperature Grade | INDUSTRIAL | |
| Terminal Form | GULL WING | |
| Terminal Pitch | 0.65 mm | |
| Terminal Position | DUAL | |
| Width | 10.16 mm |
Alternate Parts for K4H511638J-LIB30
This table gives cross-reference parts and alternative options found for K4H511638J-LIB30. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of K4H511638J-LIB30, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| MT46V32M16P-6TLIT:D | DDR DRAM, 32MX16, 0.7ns, CMOS, PDSO66 | Micron Technology Inc | K4H511638J-LIB30 vs MT46V32M16P-6TLIT:D |
| MT46V32M16P-6TIT:D | DDR DRAM, 32MX16, 0.7ns, CMOS, PDSO66 | Micron Technology Inc | K4H511638J-LIB30 vs MT46V32M16P-6TIT:D |
| MT46V32M16P-6TIT:F | DDR DRAM, 32MX16, 0.7ns, CMOS, PDSO66, 0.400 INCH, LEAD FREE, PLASTIC, TSOP-66 | Micron Technology Inc | K4H511638J-LIB30 vs MT46V32M16P-6TIT:F |
| MT46V32M16TG-6TIT:D | DDR DRAM, 32MX16, 0.7ns, CMOS, PDSO66, 0.400 INCH, PLASTIC, TSOP-66 | Micron Technology Inc | K4H511638J-LIB30 vs MT46V32M16TG-6TIT:D |
| H5DU5162ETR-J3I | DDR DRAM, 32MX16, 0.7ns, CMOS, PBGA60, ROHS COMPLIANT, FBGA-60 | SK Hynix Inc | K4H511638J-LIB30 vs H5DU5162ETR-J3I |
| MT46V32M16TG-6TLIT:F | DDR DRAM, 32MX16, 0.7ns, CMOS, PDSO66, 0.400 INCH, PLASTIC, TSOP-66 | Micron Technology Inc | K4H511638J-LIB30 vs MT46V32M16TG-6TLIT:F |
| K4H511638C-UPB30 | DDR DRAM, 32MX16, 0.7ns, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, ROHS COMPLIANT, TSOP2-66 | Samsung Semiconductor | K4H511638J-LIB30 vs K4H511638C-UPB30 |
| NT5DS32M16BT-6KI | DDR DRAM, 32MX16, 0.7ns, CMOS, PDSO66, 0.400 INCH, TSSOP2-66 | Nanya Technology Corporation | K4H511638J-LIB30 vs NT5DS32M16BT-6KI |
| MT46V32M16P-6TLIT:F | DDR DRAM, 32MX16, 0.7ns, CMOS, PDSO66, 0.400 INCH, LEAD FREE, PLASTIC, TSOP-66 | Micron Technology Inc | K4H511638J-LIB30 vs MT46V32M16P-6TLIT:F |
| K4H511638J-LPB30 | DDR DRAM, 32MX16, 0.7ns, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, HALOGEN FREE AND ROHS COMPLIANT, TSOP2-66 | Samsung Semiconductor | K4H511638J-LIB30 vs K4H511638J-LPB30 |