Memory
K4H511638J-BCCC0
Samsung Semiconductor
Description: DDR DRAM, 32MX16, 0.65ns, CMOS, PBGA60, HALOGEN FREE AND ROHS COMPLIANT, FBGA-60

Overview of K4H511638J-BCCC0 by Samsung Semiconductor

Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Where used in Applications: Education and Research Consumer Electronics Computing and Data Storage

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Part Data Attributes for K4H511638J-BCCC0 by Samsung Semiconductor

K4H511638J-BCCC0
Samsung Semiconductor
-
-
Pbfree Code
Yes
Rohs Code
Yes
Part Life Cycle Code
Obsolete
Ihs Manufacturer
SAMSUNG SEMICONDUCTOR INC
Part Package Code
BGA
Package Description
TBGA, BGA60,9X12,40/32
Pin Count
60
Reach Compliance Code
compliant
ECCN Code
EAR99
HTS Code
8542.32.00.28
Access Mode
FOUR BANK PAGE BURST
Access Time-Max
0.65 ns
Additional Feature
AUTO/SELF REFRESH
Clock Frequency-Max (fCLK)
200 MHz
I/O Type
COMMON
Interleaved Burst Length
2,4,8
JESD-30 Code
R-PBGA-B60
Length
12 mm
Memory Density
536870912 bit
Memory IC Type
DDR1 DRAM
Memory Width
16
Number of Functions
1
Number of Ports
1
Number of Terminals
60
Number of Words
33554432 words
Number of Words Code
32000000
Operating Mode
SYNCHRONOUS
Operating Temperature-Max
70 °C
Operating Temperature-Min
Organization
32MX16
Output Characteristics
3-STATE
Package Body Material
PLASTIC/EPOXY
Package Code
TBGA
Package Equivalence Code
BGA60,9X12,40/32
Package Shape
RECTANGULAR
Package Style
GRID ARRAY, THIN PROFILE
Peak Reflow Temperature (Cel)
260
Qualification Status
Not Qualified
Refresh Cycles
8192
Seated Height-Max
1.2 mm
Self Refresh
YES
Sequential Burst Length
2,4,8
Standby Current-Max
0.005 A
Supply Current-Max
0.22 mA
Supply Voltage-Max (Vsup)
2.7 V
Supply Voltage-Min (Vsup)
2.3 V
Supply Voltage-Nom (Vsup)
2.5 V
Surface Mount
YES
Technology
CMOS
Temperature Grade
COMMERCIAL
Terminal Form
BALL
Terminal Pitch
1 mm
Terminal Position
BOTTOM
Width
9 mm
Want to compare parts?
  1. K4H511638J-BCCC0
    Samsung Semiconductor
    DDR DRAM, 32MX16, 0.65ns, CMOS, PBGA60, HALOGEN FREE AND ROHS COMPLIANT, FBGA-60
    VS

Alternate Parts for K4H511638J-BCCC0

This table gives cross-reference parts and alternative options found for K4H511638J-BCCC0. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of K4H511638J-BCCC0, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
K4H511638J-BLCCT DDR DRAM, 32MX16, 0.65ns, CMOS, PBGA60 Samsung Semiconductor K4H511638J-BCCC0 vs K4H511638J-BLCCT
Part Number Description Manufacturer Compare
MT46H32M16LGCK-75LIT DDR DRAM, 32MX16, 6ns, CMOS, PBGA60, 10 X 11.5 MM, LEAD FREE, PLASTIC, VFBGA-60 Micron Technology Inc K4H511638J-BCCC0 vs MT46H32M16LGCK-75LIT
TC59LM914AMB-50 IC 32M X 16 DDR DRAM, 24 ns, PBGA60, 13 X 17 MM, 1 MM PITCH, PLASTIC, BGA-60, Dynamic RAM Toshiba America Electronic Components K4H511638J-BCCC0 vs TC59LM914AMB-50
MT46V32M16FN-75ZIT:C DDR DRAM, 32MX16, 0.75ns, CMOS, PBGA60, 10 X 12.50 MM, FBGA-60 Micron Technology Inc K4H511638J-BCCC0 vs MT46V32M16FN-75ZIT:C
V58C2512164SDLJ6E DDR DRAM, 32MX16, CMOS, PBGA60, GREEN, MO-207, FBGA-60 ProMOS Technologies Inc K4H511638J-BCCC0 vs V58C2512164SDLJ6E
MT47H32M16B6-25ELIT:D DDR DRAM, 32MX16, 0.4ns, CMOS, PBGA60, 10 X 10 MM, ROHS COMPLIANT, FBGA-60 Micron Technology Inc K4H511638J-BCCC0 vs MT47H32M16B6-25ELIT:D
MT46V32M16FN-75E DDR DRAM, 32MX16, 0.75ns, CMOS, PBGA60, 10 X 12.50 MM, PLASTIC, FBGA-60 Micron Technology Inc K4H511638J-BCCC0 vs MT46V32M16FN-75E
V58C2512164SDUJ6E DDR DRAM, 32MX16, CMOS, PBGA60, GREEN, MO-207, FBGA-60 ProMOS Technologies Inc K4H511638J-BCCC0 vs V58C2512164SDUJ6E
HYI25D512160DC-5 DDR DRAM, 32MX16, 0.7ns, CMOS, PBGA60, PLASTIC, TFBGA-60 Qimonda AG K4H511638J-BCCC0 vs HYI25D512160DC-5
MT46HC32M16LFBF-5L:B DDR DRAM, 32MX16, 5ns, CMOS, PBGA60, 8 X 9 MM, GREEN, PLASTIC, VFBGA-60 Micron Technology Inc K4H511638J-BCCC0 vs MT46HC32M16LFBF-5L:B
MT46V32M16FN-75IT:C DDR DRAM, 32MX16, 0.75ns, CMOS, PBGA60, 10 X 12.50 MM, FBGA-60 Micron Technology Inc K4H511638J-BCCC0 vs MT46V32M16FN-75IT:C

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