Datasheets
K4H511638C-ZLA2 by: Samsung Semiconductor

DDR DRAM, 32MX16, 0.75ns, CMOS, PBGA60

Part Details for K4H511638C-ZLA2 by Samsung Semiconductor

Overview of K4H511638C-ZLA2 by Samsung Semiconductor

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Applications Education and Research Consumer Electronics Computing and Data Storage

Part Details for K4H511638C-ZLA2

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K4H511638C-ZLA2 Part Data Attributes

K4H511638C-ZLA2 Samsung Semiconductor
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K4H511638C-ZLA2 Samsung Semiconductor DDR DRAM, 32MX16, 0.75ns, CMOS, PBGA60
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer SAMSUNG SEMICONDUCTOR INC
Package Description BGA, BGA60,9X12,40/32
Reach Compliance Code compliant
ECCN Code EAR99
HTS Code 8542.32.00.28
Access Time-Max 0.75 ns
Clock Frequency-Max (fCLK) 133 MHz
I/O Type COMMON
Interleaved Burst Length 2,4,8
JESD-30 Code R-PBGA-B60
JESD-609 Code e3
Memory Density 536870912 bit
Memory IC Type DDR1 DRAM
Memory Width 16
Moisture Sensitivity Level 1
Number of Terminals 60
Number of Words 33554432 words
Number of Words Code 32000000
Operating Temperature-Max 70 °C
Operating Temperature-Min
Organization 32MX16
Output Characteristics 3-STATE
Package Body Material PLASTIC/EPOXY
Package Code BGA
Package Equivalence Code BGA60,9X12,40/32
Package Shape RECTANGULAR
Package Style GRID ARRAY
Qualification Status Not Qualified
Refresh Cycles 8192
Sequential Burst Length 2,4,8
Standby Current-Max 0.005 A
Supply Current-Max 0.325 mA
Supply Voltage-Nom (Vsup) 2.5 V
Surface Mount YES
Technology CMOS
Temperature Grade COMMERCIAL
Terminal Finish MATTE TIN
Terminal Form BALL
Terminal Pitch 0.8 mm
Terminal Position BOTTOM

Alternate Parts for K4H511638C-ZLA2

This table gives cross-reference parts and alternative options found for K4H511638C-ZLA2. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of K4H511638C-ZLA2, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
MT46V32M16BN-75EL:C DDR DRAM, 32MX16, 0.75ns, CMOS, PBGA60, 10 X 12.50 MM, LEAD FREE, FBGA-60 Micron Technology Inc K4H511638C-ZLA2 vs MT46V32M16BN-75EL:C
MT46V32M16BN-75E DDR DRAM, 32MX16, 0.75ns, CMOS, PBGA60, 10 X 12.50 MM, LEAD FREE, PLASTIC, FBGA-60 Micron Technology Inc K4H511638C-ZLA2 vs MT46V32M16BN-75E
H5DU5162EFR-K2L DDR DRAM, 32MX16, 0.75ns, CMOS, PBGA60, ROHS COMPLIANT, FBGA-60 SK Hynix Inc K4H511638C-ZLA2 vs H5DU5162EFR-K2L
H5DU5162EFR-K3C DDR DRAM, 32MX16, 0.75ns, CMOS, PBGA60, ROHS COMPLIANT, FBGA-60 SK Hynix Inc K4H511638C-ZLA2 vs H5DU5162EFR-K3C
MT46V32M16FN-75ZL DDR DRAM, 32MX16, 0.75ns, CMOS, PBGA60, 10 X 12.50 MM, PLASTIC, FBGA-60 Micron Technology Inc K4H511638C-ZLA2 vs MT46V32M16FN-75ZL
MT46V32M16BN-75ZL:F DDR DRAM, 32MX16, 0.75ns, CMOS, PBGA60, 10 X 12.50 MM, LEAD FREE, PLASTIC, FBGA-60 Micron Technology Inc K4H511638C-ZLA2 vs MT46V32M16BN-75ZL:F
MT46V32M16FN-75E:C DDR DRAM, 32MX16, 0.75ns, CMOS, PBGA60, 10 X 12.50 MM, FBGA-60 Micron Technology Inc K4H511638C-ZLA2 vs MT46V32M16FN-75E:C
K4H511638C-ZCA2 DDR DRAM, 32MX16, 0.75ns, CMOS, PBGA60 Samsung Semiconductor K4H511638C-ZLA2 vs K4H511638C-ZCA2
MT46V32M16FN-75ZL:F DDR DRAM, 32MX16, 0.75ns, CMOS, PBGA60, 10 X 12.50 MM, PLASTIC, FBGA-60 Micron Technology Inc K4H511638C-ZLA2 vs MT46V32M16FN-75ZL:F
MT46V32M16FN-75E DDR DRAM, 32MX16, 0.75ns, CMOS, PBGA60, 10 X 12.50 MM, PLASTIC, FBGA-60 Micron Technology Inc K4H511638C-ZLA2 vs MT46V32M16FN-75E
Part Number Description Manufacturer Compare
NT5DS32M16BF-6K DDR DRAM, 32MX16, 0.7ns, CMOS, PBGA60, 0.80 X 1 MM PITCH, BGA-60 Nanya Technology Corporation K4H511638C-ZLA2 vs NT5DS32M16BF-6K
HY5DU121622DFP-KI DDR DRAM, 32MX16, 0.75ns, CMOS, PBGA60, ROHS COMPLIANT, FBGA-60 SK Hynix Inc K4H511638C-ZLA2 vs HY5DU121622DFP-KI
MT47H32M16CB-3ELIT:B DDR DRAM, 32MX16, 0.45ns, CMOS, PBGA60, 12 X 10 MM, ROHS COMPLIANT, FBGA-60 Micron Technology Inc K4H511638C-ZLA2 vs MT47H32M16CB-3ELIT:B
MT46V32M16BN-75ZLIT DDR DRAM, 32MX16, 0.75ns, CMOS, PBGA60, 10 X 12.50 MM, LEAD FREE, PLASTIC, FBGA-60 Micron Technology Inc K4H511638C-ZLA2 vs MT46V32M16BN-75ZLIT
MT46H32M16LFBF-54AT:C DDR DRAM, 32MX16, 5ns, CMOS, PBGA60, 8 X 9 MM, GREEN, PLASTIC, VFBGA-60 Micron Technology Inc K4H511638C-ZLA2 vs MT46H32M16LFBF-54AT:C
MT46H32M16LGBF-75AT:C DDR DRAM, 32MX16, CMOS, PBGA60, 9 X 8 MM, GREEN, PLASTIC, VFBGA-60 Micron Technology Inc K4H511638C-ZLA2 vs MT46H32M16LGBF-75AT:C
H5DU5162EFR-E3J DDR DRAM, 32MX16, 0.7ns, CMOS, PBGA60, ROHS COMPLIANT, FBGA-60 SK Hynix Inc K4H511638C-ZLA2 vs H5DU5162EFR-E3J
MT46V32M16FN-6TIT:F DDR DRAM, 32MX16, 0.7ns, CMOS, PBGA60, 10 X 12.50 MM, PLASTIC, FBGA-60 Micron Technology Inc K4H511638C-ZLA2 vs MT46V32M16FN-6TIT:F
MT46V32M16BN-75ELIT:C DDR DRAM, 32MX16, 0.75ns, CMOS, PBGA60, 10 X 12.50 MM, LEAD FREE, FBGA-60 Micron Technology Inc K4H511638C-ZLA2 vs MT46V32M16BN-75ELIT:C
V58C2512164SALJ4 DDR DRAM, 32MX16, 0.7ns, CMOS, PBGA60, GREEN, MO-207, FBGA-60 ProMOS Technologies Inc K4H511638C-ZLA2 vs V58C2512164SALJ4

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