Part Details for K4H511638C-ZCB0 by Samsung Semiconductor
Overview of K4H511638C-ZCB0 by Samsung Semiconductor
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (10 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Computing and Data Storage
Part Details for K4H511638C-ZCB0
K4H511638C-ZCB0 CAD Models
K4H511638C-ZCB0 Part Data Attributes
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K4H511638C-ZCB0
Samsung Semiconductor
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Datasheet
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K4H511638C-ZCB0
Samsung Semiconductor
DDR DRAM, 32MX16, 0.75ns, CMOS, PBGA60
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | SAMSUNG SEMICONDUCTOR INC | |
| Package Description | BGA, BGA60,9X12,40/32 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8542.32.00.28 | |
| Access Time-Max | 0.75 ns | |
| Clock Frequency-Max (fCLK) | 133 MHz | |
| I/O Type | COMMON | |
| Interleaved Burst Length | 2,4,8 | |
| JESD-30 Code | R-PBGA-B60 | |
| JESD-609 Code | e3 | |
| Memory Density | 536870912 bit | |
| Memory IC Type | DDR1 DRAM | |
| Memory Width | 16 | |
| Moisture Sensitivity Level | 1 | |
| Number of Terminals | 60 | |
| Number of Words | 33554432 words | |
| Number of Words Code | 32000000 | |
| Operating Temperature-Max | 70 °C | |
| Operating Temperature-Min | ||
| Organization | 32MX16 | |
| Output Characteristics | 3-STATE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Code | BGA | |
| Package Equivalence Code | BGA60,9X12,40/32 | |
| Package Shape | RECTANGULAR | |
| Package Style | GRID ARRAY | |
| Qualification Status | Not Qualified | |
| Refresh Cycles | 8192 | |
| Sequential Burst Length | 2,4,8 | |
| Standby Current-Max | 0.005 A | |
| Supply Current-Max | 0.325 mA | |
| Supply Voltage-Nom (Vsup) | 2.5 V | |
| Surface Mount | YES | |
| Technology | CMOS | |
| Temperature Grade | COMMERCIAL | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | BALL | |
| Terminal Pitch | 0.8 mm | |
| Terminal Position | BOTTOM |
Alternate Parts for K4H511638C-ZCB0
This table gives cross-reference parts and alternative options found for K4H511638C-ZCB0. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of K4H511638C-ZCB0, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| K4H511638C-ZLB0 | DDR DRAM, 32MX16, 0.75ns, CMOS, PBGA60 | Samsung Semiconductor | K4H511638C-ZCB0 vs K4H511638C-ZLB0 |
| MT46V32M16FN-75Z | DDR DRAM, 32MX16, 0.75ns, CMOS, PBGA60, 10 X 12.50 MM, PLASTIC, FBGA-60 | Micron Technology Inc | K4H511638C-ZCB0 vs MT46V32M16FN-75Z |
| MT46V32M16BN-75E | DDR DRAM, 32MX16, 0.75ns, CMOS, PBGA60, 10 X 12.50 MM, LEAD FREE, PLASTIC, FBGA-60 | Micron Technology Inc | K4H511638C-ZCB0 vs MT46V32M16BN-75E |
| MT46V32M16FN-75E:C | DDR DRAM, 32MX16, 0.75ns, CMOS, PBGA60, 10 X 12.50 MM, FBGA-60 | Micron Technology Inc | K4H511638C-ZCB0 vs MT46V32M16FN-75E:C |
| MT46V32M16FN-75L:F | DDR DRAM, 32MX16, 0.75ns, CMOS, PBGA60, 10 X 12.50 MM, PLASTIC, FBGA-60 | Micron Technology Inc | K4H511638C-ZCB0 vs MT46V32M16FN-75L:F |
| MT46V32M16BN-75Z:F | DDR DRAM, 32MX16, 0.75ns, CMOS, PBGA60, 10 X 12.50 MM, LEAD FREE, PLASTIC, FBGA-60 | Micron Technology Inc | K4H511638C-ZCB0 vs MT46V32M16BN-75Z:F |
| MT46V32M16BN-75Z:C | DDR DRAM, 32MX16, 0.75ns, CMOS, PBGA60, 10 X 12.50 MM, LEAD FREE, FBGA-60 | Micron Technology Inc | K4H511638C-ZCB0 vs MT46V32M16BN-75Z:C |
| MT46V32M16BN-75:F | DDR DRAM, 32MX16, 0.75ns, CMOS, PBGA60, 10 X 12.50 MM, LEAD FREE, PLASTIC, FBGA-60 | Micron Technology Inc | K4H511638C-ZCB0 vs MT46V32M16BN-75:F |
| MT46V32M16FN-75ZL:C | DDR DRAM, 32MX16, 0.75ns, CMOS, PBGA60, 10 X 12.50 MM, FBGA-60 | Micron Technology Inc | K4H511638C-ZCB0 vs MT46V32M16FN-75ZL:C |
| MT46V32M16FN-75:C | DDR DRAM, 32MX16, 0.75ns, CMOS, PBGA60, 10 X 12.50 MM, FBGA-60 | Micron Technology Inc | K4H511638C-ZCB0 vs MT46V32M16FN-75:C |