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Memory DRAMs K4H511638C-UCB0T

K4H511638C-UCB0T
Samsung Semiconductor
Description: DDR DRAM, 32MX16, 0.75ns, CMOS, PDSO66

Overview of K4H511638C-UCB0T by Samsung Semiconductor

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Where used in Applications: Education and Research Consumer Electronics Computing and Data Storage

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Part Data Attributes for K4H511638C-UCB0T by Samsung Semiconductor
Parametric Data

K4H511638C-UCB0T
Samsung Semiconductor
Buy Now
-
-
Pbfree Code
Yes
Rohs Code
Yes
Part Life Cycle Code
Obsolete
Ihs Manufacturer
SAMSUNG SEMICONDUCTOR INC
Package Description
TSSOP, TSSOP66,.46
Reach Compliance Code
compliant
ECCN Code
EAR99
HTS Code
8542.32.00.28
Access Time-Max
0.75 ns
Clock Frequency-Max (fCLK)
133 MHz
I/O Type
COMMON
Interleaved Burst Length
2,4,8
JESD-30 Code
R-PDSO-G66
JESD-609 Code
e3
Memory Density
536870912 bit
Memory IC Type
DDR1 DRAM
Memory Width
16
Moisture Sensitivity Level
1
Number of Terminals
66
Number of Words
33554432 words
Number of Words Code
32000000
Operating Temperature-Max
70 °C
Operating Temperature-Min
Organization
32MX16
Output Characteristics
3-STATE
Package Body Material
PLASTIC/EPOXY
Package Code
TSSOP
Package Equivalence Code
TSSOP66,.46
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE, THIN PROFILE, SHRINK PITCH
Qualification Status
Not Qualified
Refresh Cycles
8192
Sequential Burst Length
2,4,8
Standby Current-Max
0.005 A
Supply Current-Max
0.345 mA
Supply Voltage-Nom (Vsup)
2.5 V
Surface Mount
YES
Technology
CMOS
Temperature Grade
COMMERCIAL
Terminal Finish
MATTE TIN
Terminal Form
GULL WING
Terminal Pitch
0.635 mm
Terminal Position
DUAL
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  1. K4H511638C-UCB0T
    Samsung Semiconductor
    DDR DRAM, 32MX16, 0.75ns, CMOS, PDSO66
    VS

Alternate Parts for K4H511638C-UCB0T

This table gives cross-reference parts and alternative options found for K4H511638C-UCB0T. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of K4H511638C-UCB0T, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
MT46V32M16TG-75E:C DDR DRAM, 32MX16, 0.75ns, CMOS, PDSO66, 0.400 INCH, PLASTIC, TSOP-66 Micron Technology Inc K4H511638C-UCB0T vs MT46V32M16TG-75E:C
MT46V32M16P-75ZL DDR DRAM, 32MX16, 0.75ns, CMOS, PDSO66, 0.400 INCH, LEAD FREE, PLASTIC, TSOP-66 Micron Technology Inc K4H511638C-UCB0T vs MT46V32M16P-75ZL
MT46V32M16P-75:C DDR DRAM, 32MX16, 0.75ns, CMOS, PDSO66, 0.400 INCH, LEAD FREE, PLASTIC, TSOP-66 Micron Technology Inc K4H511638C-UCB0T vs MT46V32M16P-75:C
EDD5116AFTA-7B-E DDR DRAM, 32MX16, 0.75ns, CMOS, PDSO66, ROHS COMPLIANT, PLASTIC, TSOP2-66 Elpida Memory Inc K4H511638C-UCB0T vs EDD5116AFTA-7B-E
K4H511638B-TCAA DDR DRAM, 32MX16, 0.75ns, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, TSOP2-66 Samsung Semiconductor K4H511638C-UCB0T vs K4H511638B-TCAA
K4H511638C-UCA20 DDR DRAM, 32MX16, 0.75ns, CMOS, PDSO66, ROHS COMPLIANT, TSOP2-66 Samsung Semiconductor K4H511638C-UCB0T vs K4H511638C-UCA20
H5DU5162ETR-K2C DDR DRAM, 32MX16, 0.75ns, CMOS, PBGA60, ROHS COMPLIANT, FBGA-60 SK Hynix Inc K4H511638C-UCB0T vs H5DU5162ETR-K2C
MT46V32M16P-75E:F DDR DRAM, 32MX16, 0.75ns, CMOS, PDSO66, 0.400 INCH, LEAD FREE, PLASTIC, TSOP-66 Micron Technology Inc K4H511638C-UCB0T vs MT46V32M16P-75E:F
MT46V32M16TG-75Z:C DDR DRAM, 32MX16, 0.75ns, CMOS, PDSO66, 0.400 INCH, PLASTIC, TSOP-66 Micron Technology Inc K4H511638C-UCB0T vs MT46V32M16TG-75Z:C
K4H511638B-TLB0T DDR DRAM, 32MX16, 0.75ns, CMOS, PDSO66 Samsung Semiconductor K4H511638C-UCB0T vs K4H511638B-TLB0T
Part Number Description Manufacturer Compare
HYB25D512160BEL-6 DDR DRAM, 32MX16, 0.7ns, CMOS, PDSO66, GREEN, PLASTIC, TSOP2-66 Qimonda AG K4H511638C-UCB0T vs HYB25D512160BEL-6
IS43R16320B-5TL DDR DRAM, 32MX16, 0.7ns, CMOS, PDSO66, ROHS COMPLIANT, PLASTIC, TSOP2-66 Integrated Silicon Solution Inc K4H511638C-UCB0T vs IS43R16320B-5TL
IS43R16320D-6TLI DDR DRAM, 32MX16, 0.7ns, CMOS, PDSO66, 0.400 INCH, LEAD FREE, TSOP2-66 Integrated Silicon Solution Inc K4H511638C-UCB0T vs IS43R16320D-6TLI
HY5DU121622BLT-L DDR DRAM, 32MX16, 0.75ns, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, TSOP2-66 SK Hynix Inc K4H511638C-UCB0T vs HY5DU121622BLT-L
MT46V32M16TG-0:C DDR DRAM, 32MX16, 0.75ns, CMOS, PDSO66, 0.400 INCH, LEAD FREE, PLASTIC, TSOP-66 Micron Technology Inc K4H511638C-UCB0T vs MT46V32M16TG-0:C
MT46V32M16TG-75LIT DDR DRAM, 32MX16, 0.75ns, CMOS, PDSO66, 0.400 INCH, PLASTIC, TSOP-66 Micron Technology Inc K4H511638C-UCB0T vs MT46V32M16TG-75LIT
HY5DU121622BTP-H DDR DRAM, 32MX16, 0.75ns, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, ROHS COMPLIANT, TSOP2-66 SK Hynix Inc K4H511638C-UCB0T vs HY5DU121622BTP-H
MT46V32M16TG-6T:FTR DDR DRAM, 32MX16, 0.7ns, CMOS, PDSO66, 0.400 INCH, PLASTIC, TSOP-66 Micron Technology Inc K4H511638C-UCB0T vs MT46V32M16TG-6T:FTR
HY5DU121622DLT-L DDR DRAM, 32MX16, 0.75ns, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, TSOP2-66 SK Hynix Inc K4H511638C-UCB0T vs HY5DU121622DLT-L
MT46V32M16TG-75E:C DDR DRAM, 32MX16, 0.75ns, CMOS, PDSO66, 0.400 INCH, PLASTIC, TSOP-66 Micron Technology Inc K4H511638C-UCB0T vs MT46V32M16TG-75E:C

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