Part Details for K4H510838G-HLB30 by Samsung Semiconductor
Overview of K4H510838G-HLB30 by Samsung Semiconductor
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (10 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Consumer Electronics
Computing and Data Storage
Virtual Reality (VR), Augmented Reality (AR), and Vision Systems
Entertainment and Gaming
Part Details for K4H510838G-HLB30
K4H510838G-HLB30 CAD Models
K4H510838G-HLB30 Part Data Attributes
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K4H510838G-HLB30
Samsung Semiconductor
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Datasheet
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K4H510838G-HLB30
Samsung Semiconductor
DDR DRAM, 64MX8, 0.7ns, CMOS, PBGA60
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | SAMSUNG SEMICONDUCTOR INC | |
| Package Description | BGA, BGA60,9X12,40/32 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8542.32.00.28 | |
| Access Time-Max | 0.7 ns | |
| Clock Frequency-Max (fCLK) | 166 MHz | |
| I/O Type | COMMON | |
| Interleaved Burst Length | 2,4,8 | |
| JESD-30 Code | R-PBGA-B60 | |
| JESD-609 Code | e3 | |
| Memory Density | 536870912 bit | |
| Memory IC Type | DDR1 DRAM | |
| Memory Width | 8 | |
| Moisture Sensitivity Level | 1 | |
| Number of Terminals | 60 | |
| Number of Words | 67108864 words | |
| Number of Words Code | 64000000 | |
| Operating Temperature-Max | 70 °C | |
| Operating Temperature-Min | ||
| Organization | 64MX8 | |
| Output Characteristics | 3-STATE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Code | BGA | |
| Package Equivalence Code | BGA60,9X12,40/32 | |
| Package Shape | RECTANGULAR | |
| Package Style | GRID ARRAY | |
| Qualification Status | Not Qualified | |
| Refresh Cycles | 8192 | |
| Sequential Burst Length | 2,4,8 | |
| Standby Current-Max | 0.005 A | |
| Supply Current-Max | 0.22 mA | |
| Supply Voltage-Nom (Vsup) | 2.5 V | |
| Surface Mount | YES | |
| Technology | CMOS | |
| Temperature Grade | COMMERCIAL | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | BALL | |
| Terminal Pitch | 0.8 mm | |
| Terminal Position | BOTTOM |
Alternate Parts for K4H510838G-HLB30
This table gives cross-reference parts and alternative options found for K4H510838G-HLB30. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of K4H510838G-HLB30, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| K4H510838G-HLB3T | DDR DRAM, 64MX8, 0.7ns, CMOS, PBGA60 | Samsung Semiconductor | K4H510838G-HLB30 vs K4H510838G-HLB3T |
| MT46V64M8FN-6L:F | DDR DRAM, 64MX8, 0.7ns, CMOS, PBGA60, 10 X 12.50 MM, PLASTIC, FBGA-60 | Micron Technology Inc | K4H510838G-HLB30 vs MT46V64M8FN-6L:F |
| MT46V64M8BN-6L:F | DDR DRAM, 64MX8, 0.7ns, CMOS, PBGA60, 10 X 12.50 MM, LEAD FREE, PLASTIC, FBGA-60 | Micron Technology Inc | K4H510838G-HLB30 vs MT46V64M8BN-6L:F |
| MT46V64M8BN-6:D | DDR DRAM, 64MX8, 0.7ns, CMOS, PBGA60, 10 X 12.50 MM, LEAD FREE, PLASTIC, FBGA-60 | Micron Technology Inc | K4H510838G-HLB30 vs MT46V64M8BN-6:D |
| MT46V64M8FN-6:F | DDR DRAM, 64MX8, 0.7ns, CMOS, PBGA60, 10 X 12.50 MM, PLASTIC, FBGA-60 | Micron Technology Inc | K4H510838G-HLB30 vs MT46V64M8FN-6:F |
| MT46V64M8BN-6L:D | DDR DRAM, 64MX8, 0.7ns, CMOS, PBGA60, 10 X 12.50 MM, LEAD FREE, PLASTIC, FBGA-60 | Micron Technology Inc | K4H510838G-HLB30 vs MT46V64M8BN-6L:D |
| K4H510838F-HLB3 | DDR DRAM, 64MX8, 0.7ns, CMOS, PBGA60, | Samsung Semiconductor | K4H510838G-HLB30 vs K4H510838F-HLB3 |
| K4H510838J-BCB30 | DDR DRAM, 64MX8, 0.7ns, CMOS, PBGA60, HALOGEN FREE AND ROHS COMPLIANT, FBGA-60 | Samsung Semiconductor | K4H510838G-HLB30 vs K4H510838J-BCB30 |
| K4H510838D-ZCB3 | DDR DRAM, 64MX8, 0.7ns, CMOS, PBGA60, | Samsung Semiconductor | K4H510838G-HLB30 vs K4H510838D-ZCB3 |
| K4H510838G-HLB3 | DDR DRAM, 64MX8, 0.7ns, CMOS, PBGA60 | Samsung Semiconductor | K4H510838G-HLB30 vs K4H510838G-HLB3 |