Part Details for K4H510838D-UCB30 by Samsung Semiconductor
Overview of K4H510838D-UCB30 by Samsung Semiconductor
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (10 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
Computing and Data Storage
Virtual Reality (VR), Augmented Reality (AR), and Vision Systems
Entertainment and Gaming
Part Details for K4H510838D-UCB30
K4H510838D-UCB30 CAD Models
K4H510838D-UCB30 Part Data Attributes
|
|
K4H510838D-UCB30
Samsung Semiconductor
Buy Now
Datasheet
|
Compare Parts:
K4H510838D-UCB30
Samsung Semiconductor
DDR DRAM, 64MX8, 0.6ns, CMOS, PDSO66, ROHS COMPLIANT, TSOP2-66
|
| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | SAMSUNG SEMICONDUCTOR INC | |
| Part Package Code | TSOP2 | |
| Package Description | TSSOP, TSSOP66,.46 | |
| Pin Count | 66 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| HTS Code | 8542.32.00.28 | |
| Access Mode | FOUR BANK PAGE BURST | |
| Access Time-Max | 0.6 ns | |
| Additional Feature | AUTO/SELF REFRESH | |
| Clock Frequency-Max (fCLK) | 166 MHz | |
| I/O Type | COMMON | |
| Interleaved Burst Length | 2,4,8 | |
| JESD-30 Code | R-PDSO-G66 | |
| JESD-609 Code | e6 | |
| Length | 22.22 mm | |
| Memory Density | 536870912 bit | |
| Memory IC Type | DDR1 DRAM | |
| Memory Width | 8 | |
| Moisture Sensitivity Level | 3 | |
| Number of Functions | 1 | |
| Number of Ports | 1 | |
| Number of Terminals | 66 | |
| Number of Words | 67108864 words | |
| Number of Words Code | 64000000 | |
| Operating Mode | SYNCHRONOUS | |
| Operating Temperature-Max | 70 °C | |
| Operating Temperature-Min | ||
| Organization | 64MX8 | |
| Output Characteristics | 3-STATE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Code | TSSOP | |
| Package Equivalence Code | TSSOP66,.46 | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE, THIN PROFILE, SHRINK PITCH | |
| Peak Reflow Temperature (Cel) | 260 | |
| Qualification Status | Not Qualified | |
| Refresh Cycles | 8192 | |
| Seated Height-Max | 1.2 mm | |
| Self Refresh | YES | |
| Sequential Burst Length | 2,4,8 | |
| Standby Current-Max | 0.005 A | |
| Supply Current-Max | 0.36 mA | |
| Supply Voltage-Max (Vsup) | 2.7 V | |
| Supply Voltage-Min (Vsup) | 2.3 V | |
| Supply Voltage-Nom (Vsup) | 2.5 V | |
| Surface Mount | YES | |
| Technology | CMOS | |
| Temperature Grade | COMMERCIAL | |
| Terminal Finish | TIN BISMUTH | |
| Terminal Form | GULL WING | |
| Terminal Pitch | 0.65 mm | |
| Terminal Position | DUAL | |
| Width | 10.16 mm |
Alternate Parts for K4H510838D-UCB30
This table gives cross-reference parts and alternative options found for K4H510838D-UCB30. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of K4H510838D-UCB30, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| K4H510838B-UCB3 | DDR DRAM, 64MX8, 0.7ns, CMOS, PDSO66 | Samsung Semiconductor | K4H510838D-UCB30 vs K4H510838B-UCB3 |
| K4H510838B-UCB30 | DDR DRAM, 64MX8, 0.7ns, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, LEAD FREE, TSOP2-66 | Samsung Semiconductor | K4H510838D-UCB30 vs K4H510838B-UCB30 |
| K4H510838J-LLB3T | DDR DRAM, 64MX8, 0.7ns, CMOS, PDSO66 | Samsung Semiconductor | K4H510838D-UCB30 vs K4H510838J-LLB3T |
| K4H510838G-LCB3 | DDR DRAM, 64MX8, 0.7ns, CMOS, PDSO66, | Samsung Semiconductor | K4H510838D-UCB30 vs K4H510838G-LCB3 |
| MT46V64M8P-6T:F | DDR DRAM, 64MX8, 0.7ns, CMOS, PDSO66, 0.400 INCH, LEAD FREE, PLASTIC, TSOP-66 | Micron Technology Inc | K4H510838D-UCB30 vs MT46V64M8P-6T:F |
| K4H510838B-TLB30 | DDR DRAM, 64MX8, 0.7ns, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, TSOP2-66 | Samsung Semiconductor | K4H510838D-UCB30 vs K4H510838B-TLB30 |
| K4H510838D-ULB3 | DDR DRAM, 64MX8, 0.7ns, CMOS, PDSO66 | Samsung Semiconductor | K4H510838D-UCB30 vs K4H510838D-ULB3 |
| K4H510838D-ULB3T | Cache DRAM Module, 64MX8, 0.7ns, CMOS, PDSO66 | Samsung Semiconductor | K4H510838D-UCB30 vs K4H510838D-ULB3T |
| K4H510838B-TCB3 | DDR DRAM, 64MX8, 0.7ns, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, TSOP2-66 | Samsung Semiconductor | K4H510838D-UCB30 vs K4H510838B-TCB3 |
| K4H510838D-UCB3T | Cache DRAM Module, 64MX8, 0.7ns, CMOS, PDSO66 | Samsung Semiconductor | K4H510838D-UCB30 vs K4H510838D-UCB3T |