Part Details for K4H510838B-VCA2 by Samsung Semiconductor
Overview of K4H510838B-VCA2 by Samsung Semiconductor
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (4 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
Computing and Data Storage
Virtual Reality (VR), Augmented Reality (AR), and Vision Systems
Entertainment and Gaming
Available Datasheets
| Part # | Manufacturer | Description | Datasheet |
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| VCA2615PFBR | Texas Instruments | 2-Channel Variable Gain Amplifier 48-TQFP -40 to 85 | |
| VCA2617RHBT | Texas Instruments | 2-Channel Variable Gain Amplifier 32-VQFN -40 to 85 | |
| VCA2612Y/250 | Texas Instruments | Dual Variable-Gain Amplifier With Low Noise Pre-Amp 48-TQFP -40 to 85 |
Part Details for K4H510838B-VCA2
K4H510838B-VCA2 CAD Models
K4H510838B-VCA2 Part Data Attributes
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K4H510838B-VCA2
Samsung Semiconductor
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Datasheet
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K4H510838B-VCA2
Samsung Semiconductor
Cache DRAM Module, 64MX8, 0.75ns, CMOS, PDSO54
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | SAMSUNG SEMICONDUCTOR INC | |
| Package Description | TSSOP, TSSOP54,.46,16 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8542.32.00.28 | |
| Access Time-Max | 0.75 ns | |
| Clock Frequency-Max (fCLK) | 133 MHz | |
| I/O Type | COMMON | |
| Interleaved Burst Length | 2,4,8 | |
| JESD-30 Code | R-PDSO-G54 | |
| JESD-609 Code | e3 | |
| Memory Density | 536870912 bit | |
| Memory IC Type | CACHE DRAM MODULE | |
| Memory Width | 8 | |
| Moisture Sensitivity Level | 1 | |
| Number of Terminals | 54 | |
| Number of Words | 67108864 words | |
| Number of Words Code | 64000000 | |
| Operating Temperature-Max | 70 °C | |
| Operating Temperature-Min | ||
| Organization | 64MX8 | |
| Output Characteristics | 3-STATE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Code | TSSOP | |
| Package Equivalence Code | TSSOP54,.46,16 | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE, THIN PROFILE, SHRINK PITCH | |
| Qualification Status | Not Qualified | |
| Refresh Cycles | 8192 | |
| Sequential Burst Length | 2,4,8 | |
| Standby Current-Max | 0.005 A | |
| Supply Current-Max | 0.34 mA | |
| Supply Voltage-Nom (Vsup) | 2.5 V | |
| Surface Mount | YES | |
| Technology | CMOS | |
| Temperature Grade | COMMERCIAL | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | GULL WING | |
| Terminal Pitch | 0.4 mm | |
| Terminal Position | DUAL |
Alternate Parts for K4H510838B-VCA2
This table gives cross-reference parts and alternative options found for K4H510838B-VCA2. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of K4H510838B-VCA2, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| K4H510838B-NCAA | DDR DRAM, 64MX8, 0.75ns, CMOS, PDSO54, 0.400 X 0.441 INCH, 0.40 MM PITCH, STSOP2-54 | Samsung Semiconductor | K4H510838B-VCA2 vs K4H510838B-NCAA |
| K4H510838B-NCB0 | DDR DRAM, 64MX8, 0.75ns, CMOS, PDSO54, 0.400 X 0.441 INCH, 0.40 MM PITCH, STSOP2-54 | Samsung Semiconductor | K4H510838B-VCA2 vs K4H510838B-NCB0 |
| K4H510838B-VCB0 | Cache DRAM Module, 64MX8, 0.75ns, CMOS, PDSO54 | Samsung Semiconductor | K4H510838B-VCA2 vs K4H510838B-VCB0 |
| K4H510838B-NLAA | DDR DRAM, 64MX8, 0.75ns, CMOS, PDSO54, 0.400 X 0.441 INCH, 0.40 MM PITCH, STSOP2-54 | Samsung Semiconductor | K4H510838B-VCA2 vs K4H510838B-NLAA |