Part Details for K4H510838B-GCB30 by Samsung Semiconductor
Overview of K4H510838B-GCB30 by Samsung Semiconductor
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (10 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
Computing and Data Storage
Virtual Reality (VR), Augmented Reality (AR), and Vision Systems
Entertainment and Gaming
Part Details for K4H510838B-GCB30
K4H510838B-GCB30 CAD Models
K4H510838B-GCB30 Part Data Attributes
|
K4H510838B-GCB30
Samsung Semiconductor
Buy Now
Datasheet
|
Compare Parts:
K4H510838B-GCB30
Samsung Semiconductor
DDR DRAM, 64MX8, 0.7ns, CMOS, PBGA60, FBGA-60
|
Rohs Code | No | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | SAMSUNG SEMICONDUCTOR INC | |
Part Package Code | BGA | |
Package Description | TBGA, | |
Pin Count | 60 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
HTS Code | 8542.32.00.28 | |
Access Mode | FOUR BANK PAGE BURST | |
Access Time-Max | 0.7 ns | |
Additional Feature | AUTO/SELF REFRESH | |
JESD-30 Code | R-PBGA-B60 | |
JESD-609 Code | e0 | |
Length | 12 mm | |
Memory Density | 536870912 bit | |
Memory IC Type | DDR1 DRAM | |
Memory Width | 8 | |
Number of Functions | 1 | |
Number of Ports | 1 | |
Number of Terminals | 60 | |
Number of Words | 67108864 words | |
Number of Words Code | 64000000 | |
Operating Mode | SYNCHRONOUS | |
Operating Temperature-Max | 70 °C | |
Operating Temperature-Min | ||
Organization | 64MX8 | |
Package Body Material | PLASTIC/EPOXY | |
Package Code | TBGA | |
Package Shape | RECTANGULAR | |
Package Style | GRID ARRAY, THIN PROFILE | |
Qualification Status | Not Qualified | |
Seated Height-Max | 1.2 mm | |
Self Refresh | YES | |
Supply Voltage-Max (Vsup) | 2.7 V | |
Supply Voltage-Min (Vsup) | 2.3 V | |
Supply Voltage-Nom (Vsup) | 2.5 V | |
Surface Mount | YES | |
Technology | CMOS | |
Temperature Grade | COMMERCIAL | |
Terminal Finish | TIN LEAD | |
Terminal Form | BALL | |
Terminal Pitch | 1 mm | |
Terminal Position | BOTTOM | |
Width | 10 mm |
Alternate Parts for K4H510838B-GCB30
This table gives cross-reference parts and alternative options found for K4H510838B-GCB30. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of K4H510838B-GCB30, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
V58C2512804SAJ-5I | DDR DRAM, 64MX8, 0.7ns, CMOS, PBGA60, GREEN, MO-207, FBGA-60 | ProMOS Technologies Inc | K4H510838B-GCB30 vs V58C2512804SAJ-5I |
V58C2512804SALJ-5I | DDR DRAM, 64MX8, 0.7ns, CMOS, PBGA60, GREEN, MO-207, FBGA-60 | ProMOS Technologies Inc | K4H510838B-GCB30 vs V58C2512804SALJ-5I |
V58C512804SBJ-6 | DDR DRAM, 64MX8, 0.7ns, CMOS, PBGA60, GREEN, MO-024, FBGA-60 | ProMOS Technologies Inc | K4H510838B-GCB30 vs V58C512804SBJ-6 |
NT5DS64M8CG-6K | DDR DRAM, 64MX8, 0.7ns, CMOS, PBGA60, 1 MM PITCH, ROHS COMPLIANT, WBGA-60 | Nanya Technology Corporation | K4H510838B-GCB30 vs NT5DS64M8CG-6K |
K4H510838D-ZLB30 | DDR DRAM, 64MX8, 0.7ns, CMOS, PBGA60, ROHS COMPLIANT, FBGA-60 | Samsung Semiconductor | K4H510838B-GCB30 vs K4H510838D-ZLB30 |
K4H510838B-ZCB30 | DDR DRAM, 64MX8, 0.7ns, CMOS, PBGA60, ROHS COMPLIANT, FBGA-60 | Samsung Semiconductor | K4H510838B-GCB30 vs K4H510838B-ZCB30 |
V58C512804SBLS-6 | DDR DRAM, 64MX8, 0.7ns, CMOS, PBGA60, MO-027, FBGA-60 | ProMOS Technologies Inc | K4H510838B-GCB30 vs V58C512804SBLS-6 |
V58C2512804SALS6I | DDR DRAM, 64MX8, 0.7ns, CMOS, PBGA60, MO-207, FBGA-60 | ProMOS Technologies Inc | K4H510838B-GCB30 vs V58C2512804SALS6I |
V58C512804SBLJ-6 | DDR DRAM, 64MX8, 0.7ns, CMOS, PBGA60, GREEN, MO-024, FBGA-60 | ProMOS Technologies Inc | K4H510838B-GCB30 vs V58C512804SBLJ-6 |
HYB25D512800BF-6 | DDR DRAM, 64MX8, 0.7ns, CMOS, PBGA60, GREEN, PLASTIC, TFBGA-60 | Infineon Technologies AG | K4H510838B-GCB30 vs HYB25D512800BF-6 |