Datasheets
K4H510838B-GCB30 by: Samsung Semiconductor

DDR DRAM, 64MX8, 0.7ns, CMOS, PBGA60, FBGA-60

Part Details for K4H510838B-GCB30 by Samsung Semiconductor

Overview of K4H510838B-GCB30 by Samsung Semiconductor

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Applications Consumer Electronics Computing and Data Storage Virtual Reality (VR), Augmented Reality (AR), and Vision Systems Entertainment and Gaming

Part Details for K4H510838B-GCB30

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K4H510838B-GCB30 Part Data Attributes

K4H510838B-GCB30 Samsung Semiconductor
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K4H510838B-GCB30 Samsung Semiconductor DDR DRAM, 64MX8, 0.7ns, CMOS, PBGA60, FBGA-60
Rohs Code No
Part Life Cycle Code Obsolete
Ihs Manufacturer SAMSUNG SEMICONDUCTOR INC
Part Package Code BGA
Package Description TBGA,
Pin Count 60
Reach Compliance Code compliant
ECCN Code EAR99
HTS Code 8542.32.00.28
Access Mode FOUR BANK PAGE BURST
Access Time-Max 0.7 ns
Additional Feature AUTO/SELF REFRESH
JESD-30 Code R-PBGA-B60
JESD-609 Code e0
Length 12 mm
Memory Density 536870912 bit
Memory IC Type DDR1 DRAM
Memory Width 8
Number of Functions 1
Number of Ports 1
Number of Terminals 60
Number of Words 67108864 words
Number of Words Code 64000000
Operating Mode SYNCHRONOUS
Operating Temperature-Max 70 °C
Operating Temperature-Min
Organization 64MX8
Package Body Material PLASTIC/EPOXY
Package Code TBGA
Package Shape RECTANGULAR
Package Style GRID ARRAY, THIN PROFILE
Qualification Status Not Qualified
Seated Height-Max 1.2 mm
Self Refresh YES
Supply Voltage-Max (Vsup) 2.7 V
Supply Voltage-Min (Vsup) 2.3 V
Supply Voltage-Nom (Vsup) 2.5 V
Surface Mount YES
Technology CMOS
Temperature Grade COMMERCIAL
Terminal Finish TIN LEAD
Terminal Form BALL
Terminal Pitch 1 mm
Terminal Position BOTTOM
Width 10 mm

Alternate Parts for K4H510838B-GCB30

This table gives cross-reference parts and alternative options found for K4H510838B-GCB30. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of K4H510838B-GCB30, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
V58C2512804SAJ-5I DDR DRAM, 64MX8, 0.7ns, CMOS, PBGA60, GREEN, MO-207, FBGA-60 ProMOS Technologies Inc K4H510838B-GCB30 vs V58C2512804SAJ-5I
V58C2512804SALJ-5I DDR DRAM, 64MX8, 0.7ns, CMOS, PBGA60, GREEN, MO-207, FBGA-60 ProMOS Technologies Inc K4H510838B-GCB30 vs V58C2512804SALJ-5I
V58C512804SBJ-6 DDR DRAM, 64MX8, 0.7ns, CMOS, PBGA60, GREEN, MO-024, FBGA-60 ProMOS Technologies Inc K4H510838B-GCB30 vs V58C512804SBJ-6
NT5DS64M8CG-6K DDR DRAM, 64MX8, 0.7ns, CMOS, PBGA60, 1 MM PITCH, ROHS COMPLIANT, WBGA-60 Nanya Technology Corporation K4H510838B-GCB30 vs NT5DS64M8CG-6K
K4H510838D-ZLB30 DDR DRAM, 64MX8, 0.7ns, CMOS, PBGA60, ROHS COMPLIANT, FBGA-60 Samsung Semiconductor K4H510838B-GCB30 vs K4H510838D-ZLB30
K4H510838B-ZCB30 DDR DRAM, 64MX8, 0.7ns, CMOS, PBGA60, ROHS COMPLIANT, FBGA-60 Samsung Semiconductor K4H510838B-GCB30 vs K4H510838B-ZCB30
V58C512804SBLS-6 DDR DRAM, 64MX8, 0.7ns, CMOS, PBGA60, MO-027, FBGA-60 ProMOS Technologies Inc K4H510838B-GCB30 vs V58C512804SBLS-6
V58C2512804SALS6I DDR DRAM, 64MX8, 0.7ns, CMOS, PBGA60, MO-207, FBGA-60 ProMOS Technologies Inc K4H510838B-GCB30 vs V58C2512804SALS6I
V58C512804SBLJ-6 DDR DRAM, 64MX8, 0.7ns, CMOS, PBGA60, GREEN, MO-024, FBGA-60 ProMOS Technologies Inc K4H510838B-GCB30 vs V58C512804SBLJ-6
HYB25D512800BF-6 DDR DRAM, 64MX8, 0.7ns, CMOS, PBGA60, GREEN, PLASTIC, TFBGA-60 Infineon Technologies AG K4H510838B-GCB30 vs HYB25D512800BF-6
Part Number Description Manufacturer Compare
K4T51083QC-ZCE70 DDR DRAM, 64MX8, 0.4ns, CMOS, PBGA60, ROHS COMPLIANT, FBGA-60 Samsung Semiconductor K4H510838B-GCB30 vs K4T51083QC-ZCE70
MT47H64M8CB-3E:B DDR DRAM, 64MX8, 0.45ns, CMOS, PBGA60, 12 X 10 MM, ROHS COMPLIANT, FBGA-60 Micron Technology Inc K4H510838B-GCB30 vs MT47H64M8CB-3E:B
K4H510838C-ZCCC0 DDR DRAM, 64MX8, 0.65ns, CMOS, PBGA60, ROHS COMPLIANT, FBGA-60 Samsung Semiconductor K4H510838B-GCB30 vs K4H510838C-ZCCC0
MT47H64M8JN-3L:G DDR DRAM, 64MX8, 0.45ns, CMOS, PBGA60, 8 X 10 MM, FBGA-60 Micron Technology Inc K4H510838B-GCB30 vs MT47H64M8JN-3L:G
MT46V64M8FN-5B:F DDR DRAM, 64MX8, 0.7ns, CMOS, PBGA60, 10 X 12.50 MM, PLASTIC, FBGA-60 Micron Technology Inc K4H510838B-GCB30 vs MT46V64M8FN-5B:F
MT46V64M8BN-6AT:F DDR DRAM, 64MX8, 0.7ns, CMOS, PBGA60, 10 X 12.50 MM, LEAD FREE, PLASTIC, FBGA-60 Micron Technology Inc K4H510838B-GCB30 vs MT46V64M8BN-6AT:F
V59C1512804QDUF25I DDR DRAM, 64MX8, CMOS, PBGA60, ROHS COMPLIANT, MO-207, FBGA-60 ProMOS Technologies Inc K4H510838B-GCB30 vs V59C1512804QDUF25I
V58C2512804SDUJ4H DDR DRAM, 64MX8, CMOS, PBGA60, GREEN, MO-207, FBGA-60 ProMOS Technologies Inc K4H510838B-GCB30 vs V58C2512804SDUJ4H
MT46V64M8BN-75L:C DDR DRAM, 64MX8, 0.75ns, CMOS, PBGA60, 10 X 12.50 MM, LEAD FREE, FBGA-60 Micron Technology Inc K4H510838B-GCB30 vs MT46V64M8BN-75L:C
V58C2512804SALJ5I 64MX8 DDR DRAM, 0.7ns, PBGA60, GREEN, MO-207, FBGA-60 ProMOS Technologies Inc K4H510838B-GCB30 vs V58C2512804SALJ5I

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