Part Details for K4H510438G-LCB3T by Samsung Semiconductor
Overview of K4H510438G-LCB3T by Samsung Semiconductor
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (10 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Computing and Data Storage
Part Details for K4H510438G-LCB3T
K4H510438G-LCB3T CAD Models
K4H510438G-LCB3T Part Data Attributes
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K4H510438G-LCB3T
Samsung Semiconductor
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Datasheet
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K4H510438G-LCB3T
Samsung Semiconductor
DDR DRAM, 128MX4, 0.7ns, CMOS, PDSO66,
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | SAMSUNG SEMICONDUCTOR INC | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| HTS Code | 8542.32.00.28 | |
| Access Time-Max | 0.7 ns | |
| Clock Frequency-Max (fCLK) | 166 MHz | |
| I/O Type | COMMON | |
| Interleaved Burst Length | 2,4,8 | |
| JESD-30 Code | R-PDSO-G66 | |
| JESD-609 Code | e6 | |
| Memory Density | 536870912 bit | |
| Memory IC Type | DDR1 DRAM | |
| Memory Width | 4 | |
| Moisture Sensitivity Level | 3 | |
| Number of Terminals | 66 | |
| Number of Words | 134217728 words | |
| Number of Words Code | 128000000 | |
| Operating Temperature-Max | 70 °C | |
| Operating Temperature-Min | ||
| Organization | 128MX4 | |
| Output Characteristics | 3-STATE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Code | TSSOP | |
| Package Equivalence Code | TSSOP66,.46 | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE, THIN PROFILE, SHRINK PITCH | |
| Peak Reflow Temperature (Cel) | 260 | |
| Qualification Status | Not Qualified | |
| Refresh Cycles | 8192 | |
| Sequential Burst Length | 2,4,8 | |
| Standby Current-Max | 0.005 A | |
| Supply Current-Max | 0.21 mA | |
| Supply Voltage-Nom (Vsup) | 2.5 V | |
| Surface Mount | YES | |
| Technology | CMOS | |
| Temperature Grade | COMMERCIAL | |
| Terminal Finish | TIN BISMUTH | |
| Terminal Form | GULL WING | |
| Terminal Pitch | 0.635 mm | |
| Terminal Position | DUAL |
Alternate Parts for K4H510438G-LCB3T
This table gives cross-reference parts and alternative options found for K4H510438G-LCB3T. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of K4H510438G-LCB3T, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| K4H510438J-LCB30 | DDR DRAM, 128MX4, 0.7ns, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, HALOGEN FREE AND ROHS COMPLIANT, TSOP2-66 | Samsung Semiconductor | K4H510438G-LCB3T vs K4H510438J-LCB30 |
| K4H510438B-ULB3 | DDR DRAM, 128MX4, 0.7ns, CMOS, PDSO66 | Samsung Semiconductor | K4H510438G-LCB3T vs K4H510438B-ULB3 |
| MT46V128M4P-6T:D | DDR DRAM, 128MX4, 0.7ns, CMOS, PDSO66, 0.400 INCH, LEAD FREE, PLASTIC, TSOP-66 | Micron Technology Inc | K4H510438G-LCB3T vs MT46V128M4P-6T:D |
| K4H510438B-TCB30 | DDR DRAM, 128MX4, 0.7ns, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, TSOP2-66 | Samsung Semiconductor | K4H510438G-LCB3T vs K4H510438B-TCB30 |
| K4H510438C-UCB3 | DDR DRAM, 128MX4, 0.7ns, CMOS, PDSO66, | Samsung Semiconductor | K4H510438G-LCB3T vs K4H510438C-UCB3 |
| K4H510438G-LLB3T | DDR DRAM, 128MX4, 0.7ns, CMOS, PDSO66, | Samsung Semiconductor | K4H510438G-LCB3T vs K4H510438G-LLB3T |
| MT46V128M4TG-6T:D | DDR DRAM, 128MX4, 0.7ns, CMOS, PDSO66, 0.400 INCH, PLASTIC, TSOP-66 | Micron Technology Inc | K4H510438G-LCB3T vs MT46V128M4TG-6T:D |
| K4H510438G-LLB30 | DDR DRAM, 128MX4, 0.7ns, CMOS, PDSO66, | Samsung Semiconductor | K4H510438G-LCB3T vs K4H510438G-LLB30 |
| K4H510438B-TCB3 | DDR DRAM, 128MX4, 0.7ns, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, TSOP2-66 | Samsung Semiconductor | K4H510438G-LCB3T vs K4H510438B-TCB3 |
| K4H510438B-TLB3 | DDR DRAM, 128MX4, 0.7ns, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, TSOP2-66 | Samsung Semiconductor | K4H510438G-LCB3T vs K4H510438B-TLB3 |