Part Details for K4H510438C-ZLB30 by Samsung Semiconductor
Overview of K4H510438C-ZLB30 by Samsung Semiconductor
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (6 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Part Details for K4H510438C-ZLB30
K4H510438C-ZLB30 CAD Models
K4H510438C-ZLB30 Part Data Attributes
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K4H510438C-ZLB30
Samsung Semiconductor
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Datasheet
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K4H510438C-ZLB30
Samsung Semiconductor
DDR DRAM, 128MX4, 0.7ns, CMOS, PBGA60, ROHS COMPLIANT, FBGA-60
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Rohs Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | SAMSUNG SEMICONDUCTOR INC | |
Part Package Code | BGA | |
Package Description | TFBGA, BGA60,9X12,40/32 | |
Pin Count | 60 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
HTS Code | 8542.32.00.28 | |
Access Mode | FOUR BANK PAGE BURST | |
Access Time-Max | 0.7 ns | |
Additional Feature | AUTO/SELF REFRESH | |
Clock Frequency-Max (fCLK) | 166 MHz | |
I/O Type | COMMON | |
Interleaved Burst Length | 2,4,8 | |
JESD-30 Code | R-PBGA-B60 | |
JESD-609 Code | e1 | |
Length | 12 mm | |
Memory Density | 536870912 bit | |
Memory IC Type | DDR1 DRAM | |
Memory Width | 4 | |
Moisture Sensitivity Level | 2 | |
Number of Functions | 1 | |
Number of Ports | 1 | |
Number of Terminals | 60 | |
Number of Words | 134217728 words | |
Number of Words Code | 128000000 | |
Operating Mode | SYNCHRONOUS | |
Operating Temperature-Max | 70 °C | |
Operating Temperature-Min | ||
Organization | 128MX4 | |
Output Characteristics | 3-STATE | |
Package Body Material | PLASTIC/EPOXY | |
Package Code | TFBGA | |
Package Equivalence Code | BGA60,9X12,40/32 | |
Package Shape | RECTANGULAR | |
Package Style | GRID ARRAY, THIN PROFILE, FINE PITCH | |
Qualification Status | Not Qualified | |
Refresh Cycles | 8192 | |
Seated Height-Max | 1.2 mm | |
Self Refresh | YES | |
Sequential Burst Length | 2,4,8 | |
Standby Current-Max | 0.005 A | |
Supply Current-Max | 0.36 mA | |
Supply Voltage-Max (Vsup) | 2.7 V | |
Supply Voltage-Min (Vsup) | 2.3 V | |
Supply Voltage-Nom (Vsup) | 2.5 V | |
Surface Mount | YES | |
Technology | CMOS | |
Temperature Grade | COMMERCIAL | |
Terminal Finish | TIN SILVER COPPER | |
Terminal Form | BALL | |
Terminal Pitch | 0.8 mm | |
Terminal Position | BOTTOM | |
Width | 10 mm |
Alternate Parts for K4H510438C-ZLB30
This table gives cross-reference parts and alternative options found for K4H510438C-ZLB30. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of K4H510438C-ZLB30, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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K4H510438C-ZLB3 | DDR DRAM, 128MX4, 0.7ns, CMOS, PBGA60 | Samsung Semiconductor | K4H510438C-ZLB30 vs K4H510438C-ZLB3 |
V58C2512404SALS6 | Cache DRAM Module, 128MX4, 0.7ns, CMOS, PBGA60 | ProMOS Technologies Inc | K4H510438C-ZLB30 vs V58C2512404SALS6 |
V58C2512404SALF6 | Cache DRAM Module, 128MX4, 0.7ns, CMOS, PBGA60 | ProMOS Technologies Inc | K4H510438C-ZLB30 vs V58C2512404SALF6 |
K4H510438C-ZLB3T | DDR DRAM, 128MX4, 0.7ns, CMOS, PBGA60 | Samsung Semiconductor | K4H510438C-ZLB30 vs K4H510438C-ZLB3T |
V58C2512404SAF6 | Cache DRAM Module, 128MX4, 0.7ns, CMOS, PBGA60 | ProMOS Technologies Inc | K4H510438C-ZLB30 vs V58C2512404SAF6 |
V58C2512404SALJ6 | DDR DRAM, 128MX4, 0.7ns, CMOS, PBGA60, GREEN, MO-207, FBGA-60 | ProMOS Technologies Inc | K4H510438C-ZLB30 vs V58C2512404SALJ6 |