Part Details for K4F660812B-TC45 by Samsung Semiconductor
Overview of K4F660812B-TC45 by Samsung Semiconductor
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- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Internet of Things (IoT)
Environmental Monitoring
Financial Technology (Fintech)
Smart Cities
Transportation and Logistics
Agriculture Technology
Telecommunications
Virtual Reality (VR), Augmented Reality (AR), and Vision Systems
Education and Research
Consumer Electronics
Security and Surveillance
Audio and Video Systems
Computing and Data Storage
Healthcare
Entertainment and Gaming
Part Details for K4F660812B-TC45
K4F660812B-TC45 CAD Models
K4F660812B-TC45 Part Data Attributes
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K4F660812B-TC45
Samsung Semiconductor
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Datasheet
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K4F660812B-TC45
Samsung Semiconductor
Fast Page DRAM, 8MX8, 45ns, CMOS, PDSO32, 0.400 INCH, PLASTIC, TSOP2-32
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Rohs Code | No | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | SAMSUNG SEMICONDUCTOR INC | |
Part Package Code | TSOP2 | |
Package Description | TSOP2, TSOP32,.46 | |
Pin Count | 32 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
HTS Code | 8542.32.00.02 | |
Access Mode | FAST PAGE | |
Access Time-Max | 45 ns | |
Additional Feature | RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH | |
I/O Type | COMMON | |
JESD-30 Code | R-PDSO-G32 | |
JESD-609 Code | e0 | |
Length | 20.95 mm | |
Memory Density | 67108864 bit | |
Memory IC Type | FAST PAGE DRAM | |
Memory Width | 8 | |
Number of Functions | 1 | |
Number of Ports | 1 | |
Number of Terminals | 32 | |
Number of Words | 8388608 words | |
Number of Words Code | 8000000 | |
Operating Mode | ASYNCHRONOUS | |
Operating Temperature-Max | 70 °C | |
Operating Temperature-Min | ||
Organization | 8MX8 | |
Output Characteristics | 3-STATE | |
Package Body Material | PLASTIC/EPOXY | |
Package Code | TSOP2 | |
Package Equivalence Code | TSOP32,.46 | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE, THIN PROFILE | |
Qualification Status | Not Qualified | |
Refresh Cycles | 8192 | |
Seated Height-Max | 1.2 mm | |
Self Refresh | NO | |
Standby Current-Max | 0.0005 A | |
Supply Current-Max | 0.1 mA | |
Supply Voltage-Max (Vsup) | 3.6 V | |
Supply Voltage-Min (Vsup) | 3 V | |
Supply Voltage-Nom (Vsup) | 3.3 V | |
Surface Mount | YES | |
Technology | CMOS | |
Temperature Grade | COMMERCIAL | |
Terminal Finish | TIN LEAD | |
Terminal Form | GULL WING | |
Terminal Pitch | 1.27 mm | |
Terminal Position | DUAL | |
Width | 10.16 mm |
Alternate Parts for K4F660812B-TC45
This table gives cross-reference parts and alternative options found for K4F660812B-TC45. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of K4F660812B-TC45, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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V53C364805AT40L | EDO DRAM, 8MX8, 40ns, CMOS, PDSO32, 0.400 INCH, PLASTIC, TSOP2-32 | Mosel Vitelic Corporation | K4F660812B-TC45 vs V53C364805AT40L |
M5M467805BTP-5S | EDO DRAM, 8MX8, 50ns, CMOS, PDSO32, 0.400 INCH, TSOP-32 | Mitsubishi Electric | K4F660812B-TC45 vs M5M467805BTP-5S |
K4E640812B-TL50 | EDO DRAM, 8MX8, 50ns, CMOS, PDSO32, 0.400 INCH, PLASTIC, TSOP2-32 | Samsung Semiconductor | K4F660812B-TC45 vs K4E640812B-TL50 |
KM48V8100T-F5 | Fast Page DRAM, 8MX8, 50ns, CMOS, PDSO32, PLASTIC, TSOP2-32 | Samsung Semiconductor | K4F660812B-TC45 vs KM48V8100T-F5 |
M5M467805ATP-5 | EDO DRAM, 8MX8, 50ns, CMOS, PDSO32, 0.400 INCH, 1.27 MM PITCH, PLASTIC, TSOP2-32 | Mitsubishi Electric | K4F660812B-TC45 vs M5M467805ATP-5 |
M5M467805ATP-6S | EDO DRAM, 8MX8, 60ns, CMOS, PDSO32, 0.400 INCH, TSOP2-32 | Mitsubishi Electric | K4F660812B-TC45 vs M5M467805ATP-6S |
K4F640812D-TL600 | Fast Page DRAM, 8MX8, 60ns, CMOS, PDSO32, 0.400 INCH, PLASTIC, TSOP2-32 | Samsung Semiconductor | K4F660812B-TC45 vs K4F640812D-TL600 |
M5M465805DTP-6 | EDO DRAM, 8MX8, 60ns, CMOS, PDSO32, 0.400 INCH, TSOP-32 | Mitsubishi Electric | K4F660812B-TC45 vs M5M465805DTP-6 |
HY51V64804ALTC-60 | EDO DRAM, 8MX8, 60ns, CMOS, PDSO32, 0.400 INCH, PLASTIC, TSOP2-32 | SK Hynix Inc | K4F660812B-TC45 vs HY51V64804ALTC-60 |
KM48V8000T-6 | Fast Page DRAM, 8MX8, 60ns, CMOS, PDSO32, PLASTIC, TSOP2-32 | Samsung Semiconductor | K4F660812B-TC45 vs KM48V8000T-6 |