Part Details for K4F641612E-TC50 by Samsung Semiconductor
Overview of K4F641612E-TC50 by Samsung Semiconductor
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (10 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Available Datasheets
Part # | Manufacturer | Description | Datasheet |
---|---|---|---|
LM5070MTC-50/NOPB | Texas Instruments | Integrated Power Over Ethernet PD Interface and PWM Controller 16-TSSOP -40 to 125 |
Price & Stock for K4F641612E-TC50
Part # | Distributor | Description | Stock | Price | Buy | |
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Bristol Electronics | 370 |
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RFQ |
Part Details for K4F641612E-TC50
K4F641612E-TC50 CAD Models
K4F641612E-TC50 Part Data Attributes
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K4F641612E-TC50
Samsung Semiconductor
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Datasheet
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K4F641612E-TC50
Samsung Semiconductor
Fast Page DRAM, 4MX16, 50ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50
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Rohs Code | No | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | SAMSUNG SEMICONDUCTOR INC | |
Part Package Code | TSOP2 | |
Package Description | TSOP2, TSOP50,.46,32 | |
Pin Count | 50 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
HTS Code | 8542.32.00.02 | |
Access Mode | FAST PAGE | |
Access Time-Max | 50 ns | |
Additional Feature | RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH | |
I/O Type | COMMON | |
JESD-30 Code | R-PDSO-G50 | |
JESD-609 Code | e0 | |
Length | 20.95 mm | |
Memory Density | 67108864 bit | |
Memory IC Type | FAST PAGE DRAM | |
Memory Width | 16 | |
Number of Functions | 1 | |
Number of Ports | 1 | |
Number of Terminals | 50 | |
Number of Words | 4194304 words | |
Number of Words Code | 4000000 | |
Operating Mode | ASYNCHRONOUS | |
Operating Temperature-Max | 70 °C | |
Operating Temperature-Min | ||
Organization | 4MX16 | |
Output Characteristics | 3-STATE | |
Package Body Material | PLASTIC/EPOXY | |
Package Code | TSOP2 | |
Package Equivalence Code | TSOP50,.46,32 | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE, THIN PROFILE | |
Qualification Status | Not Qualified | |
Refresh Cycles | 4096 | |
Seated Height-Max | 1.2 mm | |
Self Refresh | NO | |
Standby Current-Max | 0.0005 A | |
Supply Current-Max | 0.12 mA | |
Supply Voltage-Max (Vsup) | 3.6 V | |
Supply Voltage-Min (Vsup) | 3 V | |
Supply Voltage-Nom (Vsup) | 3.3 V | |
Surface Mount | YES | |
Technology | CMOS | |
Temperature Grade | COMMERCIAL | |
Terminal Finish | TIN LEAD | |
Terminal Form | GULL WING | |
Terminal Pitch | 0.8 mm | |
Terminal Position | DUAL | |
Width | 10.16 mm |
Alternate Parts for K4F641612E-TC50
This table gives cross-reference parts and alternative options found for K4F641612E-TC50. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of K4F641612E-TC50, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
K4F641612B-TC50 | Fast Page DRAM, 4MX16, 50ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50 | Samsung Semiconductor | K4F641612E-TC50 vs K4F641612B-TC50 |
HY51V64160ASLTC-50 | Fast Page DRAM, 4MX16, 50ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50 | SK Hynix Inc | K4F641612E-TC50 vs HY51V64160ASLTC-50 |
M5M465160DTP-5 | Fast Page DRAM, 4MX16, 50ns, CMOS, PDSO50, 0.400 INCH, TSOP-50 | Mitsubishi Electric | K4F641612E-TC50 vs M5M465160DTP-5 |
K4F661612C-TC500 | Fast Page DRAM, 4MX16, 50ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50 | Samsung Semiconductor | K4F641612E-TC50 vs K4F661612C-TC500 |
K4F661612B-TC50 | Fast Page DRAM, 4MX16, 50ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50 | Samsung Semiconductor | K4F641612E-TC50 vs K4F661612B-TC50 |
HY51V64160ALTC-50 | Fast Page DRAM, 4MX16, 50ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50 | SK Hynix Inc | K4F641612E-TC50 vs HY51V64160ALTC-50 |
K4F661612B-TL500 | Fast Page DRAM, 4MX16, 50ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50 | Samsung Semiconductor | K4F641612E-TC50 vs K4F661612B-TL500 |
K4F661612D-TC50 | Fast Page DRAM, 4MX16, 50ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50 | Samsung Semiconductor | K4F641612E-TC50 vs K4F661612D-TC50 |
HYB3166160ATL-50 | Fast Page DRAM, 4MX16, 50ns, CMOS, PDSO50, 0.400 INCH, 0.80 MM PITCH, PLASTIC, TSOP2-50 | Infineon Technologies AG | K4F641612E-TC50 vs HYB3166160ATL-50 |
HY51V64160ATC-50 | Fast Page DRAM, 4MX16, 50ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50 | SK Hynix Inc | K4F641612E-TC50 vs HY51V64160ATC-50 |