There are no models available for this part yet.
Overview of K4E661612E-TL60 by Samsung Semiconductor
Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
- Distributor Offerings: ( 0 listings )
- Number of FFF Equivalents: ( 10 crosses )
- CAD Models: ( Request Part )
- Number of Functional Equivalents: ( 10 crosses )
- Part Data Attributes ( Available )
- Reference Designs: ( Not Available )
Where used in Applications:
Internet of Things (IoT)
Environmental Monitoring
Financial Technology (Fintech)
Smart Cities
Transportation and Logistics
Agriculture Technology
Telecommunications
Virtual Reality (VR), Augmented Reality (AR), and Vision Systems
Education and Research
Consumer Electronics
Security and Surveillance
Audio and Video Systems
Computing and Data Storage
Healthcare
Entertainment and Gaming
Available Datasheets
| Part # | Manufacturer | Description | Datasheet |
|---|---|---|---|
| TL604IP | Rochester Electronics LLC | SPDT, 1 Func, 1 Channel, BIMOS, PDIP8, PACKAGE-8 |
CAD Models for K4E661612E-TL60 by Samsung Semiconductor
Part Data Attributes for K4E661612E-TL60 by Samsung Semiconductor
|
|
|
|---|---|
|
Rohs Code
|
No
|
|
Part Life Cycle Code
|
Obsolete
|
|
Ihs Manufacturer
|
SAMSUNG SEMICONDUCTOR INC
|
|
Part Package Code
|
TSOP2
|
|
Package Description
|
TSOP2, TSOP50,.46,32
|
|
Pin Count
|
50
|
|
Reach Compliance Code
|
unknown
|
|
ECCN Code
|
EAR99
|
|
HTS Code
|
8542.32.00.02
|
|
Access Mode
|
FAST PAGE WITH EDO
|
|
Access Time-Max
|
60 ns
|
|
Additional Feature
|
RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH/SELF REFRESH
|
|
I/O Type
|
COMMON
|
|
JESD-30 Code
|
R-PDSO-G50
|
|
JESD-609 Code
|
e0
|
|
Length
|
20.95 mm
|
|
Memory Density
|
67108864 bit
|
|
Memory IC Type
|
EDO DRAM
|
|
Memory Width
|
16
|
|
Number of Functions
|
1
|
|
Number of Ports
|
1
|
|
Number of Terminals
|
50
|
|
Number of Words
|
4194304 words
|
|
Number of Words Code
|
4000000
|
|
Operating Mode
|
ASYNCHRONOUS
|
|
Operating Temperature-Max
|
70 °C
|
|
Operating Temperature-Min
|
|
|
Organization
|
4MX16
|
|
Output Characteristics
|
3-STATE
|
|
Package Body Material
|
PLASTIC/EPOXY
|
|
Package Code
|
TSOP2
|
|
Package Equivalence Code
|
TSOP50,.46,32
|
|
Package Shape
|
RECTANGULAR
|
|
Package Style
|
SMALL OUTLINE, THIN PROFILE
|
|
Qualification Status
|
Not Qualified
|
|
Refresh Cycles
|
8192
|
|
Seated Height-Max
|
1.2 mm
|
|
Self Refresh
|
YES
|
|
Standby Current-Max
|
0.0002 A
|
|
Supply Current-Max
|
0.11 mA
|
|
Supply Voltage-Max (Vsup)
|
3.6 V
|
|
Supply Voltage-Min (Vsup)
|
3 V
|
|
Supply Voltage-Nom (Vsup)
|
3.3 V
|
|
Surface Mount
|
YES
|
|
Technology
|
CMOS
|
|
Temperature Grade
|
COMMERCIAL
|
|
Terminal Finish
|
TIN LEAD
|
|
Terminal Form
|
GULL WING
|
|
Terminal Pitch
|
0.8 mm
|
|
Terminal Position
|
DUAL
|
|
Width
|
10.16 mm
|
Alternate Parts for K4E661612E-TL60
This table gives cross-reference parts and alternative options found for K4E661612E-TL60. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of K4E661612E-TL60, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| HY51V65173HGT-6E | EDO DRAM, 4MX16, 60ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50 | SK Hynix Inc | K4E661612E-TL60 vs HY51V65173HGT-6E |
| K4E661612B-TC600 | EDO DRAM, 4MX16, 60ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50 | Samsung Semiconductor | K4E661612E-TL60 vs K4E661612B-TC600 |
| KM416V4004CT-L6 | EDO DRAM, 4MX16, 60ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50 | Samsung Semiconductor | K4E661612E-TL60 vs KM416V4004CT-L6 |
| KM416V4004BS-6 | EDO DRAM, 4MX16, 60ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50 | Samsung Semiconductor | K4E661612E-TL60 vs KM416V4004BS-6 |
| HY51V64164TC-60 | EDO DRAM, 4MX16, 60ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50 | SK Hynix Inc | K4E661612E-TL60 vs HY51V64164TC-60 |
| K4E641612D-TC60 | EDO DRAM, 4MX16, 60ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50 | Samsung Semiconductor | K4E661612E-TL60 vs K4E641612D-TC60 |
| K4E661612E-TI60 | EDO DRAM, 4MX16, 60ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50 | Samsung Semiconductor | K4E661612E-TL60 vs K4E661612E-TI60 |
| HM5164165TT-6 | EDO DRAM, 4MX16, 60ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50 | Hitachi Ltd | K4E661612E-TL60 vs HM5164165TT-6 |
| HY51V65164ASLTC-60 | EDO DRAM, 4MX16, 60ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50 | SK Hynix Inc | K4E661612E-TL60 vs HY51V65164ASLTC-60 |
| HY51V64164SLTC-60 | EDO DRAM, 4MX16, 60ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50 | SK Hynix Inc | K4E661612E-TL60 vs HY51V64164SLTC-60 |