Datasheets
K4E661611D-TC50 by: Samsung Semiconductor

EDO DRAM, 4MX16, 50ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50

Part Details for K4E661611D-TC50 by Samsung Semiconductor

Overview of K4E661611D-TC50 by Samsung Semiconductor

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Applications Consumer Electronics Computing and Data Storage

Available Datasheets

Part # Manufacturer Description Datasheet
LM5070MTC-50/NOPB Texas Instruments Integrated Power Over Ethernet PD Interface and PWM Controller 16-TSSOP -40 to 125

Part Details for K4E661611D-TC50

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K4E661611D-TC50 Part Data Attributes

K4E661611D-TC50 Samsung Semiconductor
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K4E661611D-TC50 Samsung Semiconductor EDO DRAM, 4MX16, 50ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50
Rohs Code No
Part Life Cycle Code Obsolete
Ihs Manufacturer SAMSUNG SEMICONDUCTOR INC
Part Package Code TSOP2
Package Description TSOP2, TSOP50,.46,32
Pin Count 50
Reach Compliance Code unknown
ECCN Code EAR99
HTS Code 8542.32.00.02
Access Mode FAST PAGE WITH EDO
Access Time-Max 50 ns
Additional Feature RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH
I/O Type COMMON
JESD-30 Code R-PDSO-G50
JESD-609 Code e0
Length 20.95 mm
Memory Density 67108864 bit
Memory IC Type EDO DRAM
Memory Width 16
Number of Functions 1
Number of Ports 1
Number of Terminals 50
Number of Words 4194304 words
Number of Words Code 4000000
Operating Mode ASYNCHRONOUS
Operating Temperature-Max 70 °C
Operating Temperature-Min
Organization 4MX16
Output Characteristics 3-STATE
Package Body Material PLASTIC/EPOXY
Package Code TSOP2
Package Equivalence Code TSOP50,.46,32
Package Shape RECTANGULAR
Package Style SMALL OUTLINE, THIN PROFILE
Qualification Status Not Qualified
Refresh Cycles 8192
Seated Height-Max 1.2 mm
Self Refresh NO
Standby Current-Max 0.001 A
Supply Current-Max 0.12 mA
Supply Voltage-Max (Vsup) 5.5 V
Supply Voltage-Min (Vsup) 4.5 V
Supply Voltage-Nom (Vsup) 5 V
Surface Mount YES
Technology CMOS
Temperature Grade COMMERCIAL
Terminal Finish TIN LEAD
Terminal Form GULL WING
Terminal Pitch 0.8 mm
Terminal Position DUAL
Width 10.16 mm

Alternate Parts for K4E661611D-TC50

This table gives cross-reference parts and alternative options found for K4E661611D-TC50. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of K4E661611D-TC50, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
K4E661611C-TC50 EDO DRAM, 4MX16, 50ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50 Samsung Semiconductor K4E661611D-TC50 vs K4E661611C-TC50
KM416C4004BS-5 EDO DRAM, 4MX16, 50ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50 Samsung Semiconductor K4E661611D-TC50 vs KM416C4004BS-5
Part Number Description Manufacturer Compare
K4E641611C-TC600 EDO DRAM, 4MX16, 60ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50 Samsung Semiconductor K4E661611D-TC50 vs K4E641611C-TC600
HM5164160ATT-7 Fast Page DRAM, 4MX16, 70ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50 Hitachi Ltd K4E661611D-TC50 vs HM5164160ATT-7
MT4LC4M16U6TG-60 EDO DRAM, 4MX16, 60ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP-50 Micron Technology Inc K4E661611D-TC50 vs MT4LC4M16U6TG-60
K4F641612D-TP60 Fast Page DRAM, 4MX16, 60ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50 Samsung Semiconductor K4E661611D-TC50 vs K4F641612D-TP60
K4F661612B-TL60 Fast Page DRAM, 4MX16, 60ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50 Samsung Semiconductor K4E661611D-TC50 vs K4F661612B-TL60
HYB3164165ATL-60 EDO DRAM, 4MX16, 60ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50 Infineon Technologies AG K4E661611D-TC50 vs HYB3164165ATL-60
KM416C4004BS-45 EDO DRAM, 4MX16, 45ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50 Samsung Semiconductor K4E661611D-TC50 vs KM416C4004BS-45
K4F641612E-TC45 Fast Page DRAM, 4MX16, 45ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50 Samsung Semiconductor K4E661611D-TC50 vs K4F641612E-TC45
IBM0165165PT3C-50 EDO DRAM, 4MX16, 50ns, CMOS, PDSO50, 0.400 X 0.825 INCH, PLASTIC, TSOP-50 IBM K4E661611D-TC50 vs IBM0165165PT3C-50
HYB3165165AT-60 EDO DRAM, 4MX16, 60ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50 Infineon Technologies AG K4E661611D-TC50 vs HYB3165165AT-60

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