There are no models available for this part yet.
Overview of K4E660812E-TC60 by Samsung Semiconductor
Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
- Distributor Offerings: ( 0 listings )
- Number of FFF Equivalents: ( 10 replacements )
- CAD Models: ( Request Part )
- Number of Functional Equivalents: ( 10 options )
- Part Data Attributes ( Available )
- Reference Designs: ( Not Available )
Where used in Applications:
Education and Research
Consumer Electronics
Computing and Data Storage
Available Datasheets
Part # | Manufacturer | Description | Datasheet |
---|---|---|---|
LTC6090HS8E-5#TRPBF | Analog Devices | 140V CMOS R2R Out, pA In C Op | |
LTC6090IFE-5#TRPBF | Analog Devices | 140V CMOS R2R Out, pA In C Op | |
LTC6078CDD#PBF | Analog Devices | uP Prec, 2x CMOS R2R In/Out Am |
CAD Models for K4E660812E-TC60 by Samsung Semiconductor
Part Data Attributes for K4E660812E-TC60 by Samsung Semiconductor
|
|
---|---|
Rohs Code
|
No
|
Part Life Cycle Code
|
Obsolete
|
Ihs Manufacturer
|
SAMSUNG SEMICONDUCTOR INC
|
Part Package Code
|
TSOP2
|
Package Description
|
TSOP2, TSOP32,.46
|
Pin Count
|
32
|
Reach Compliance Code
|
unknown
|
ECCN Code
|
EAR99
|
HTS Code
|
8542.32.00.02
|
Access Mode
|
FAST PAGE WITH EDO
|
Access Time-Max
|
60 ns
|
Additional Feature
|
RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH
|
I/O Type
|
COMMON
|
JESD-30 Code
|
R-PDSO-G32
|
JESD-609 Code
|
e0
|
Length
|
20.95 mm
|
Memory Density
|
67108864 bit
|
Memory IC Type
|
EDO DRAM
|
Memory Width
|
8
|
Number of Functions
|
1
|
Number of Ports
|
1
|
Number of Terminals
|
32
|
Number of Words
|
8388608 words
|
Number of Words Code
|
8000000
|
Operating Mode
|
ASYNCHRONOUS
|
Operating Temperature-Max
|
70 °C
|
Operating Temperature-Min
|
|
Organization
|
8MX8
|
Output Characteristics
|
3-STATE
|
Package Body Material
|
PLASTIC/EPOXY
|
Package Code
|
TSOP2
|
Package Equivalence Code
|
TSOP32,.46
|
Package Shape
|
RECTANGULAR
|
Package Style
|
SMALL OUTLINE, THIN PROFILE
|
Qualification Status
|
Not Qualified
|
Refresh Cycles
|
8192
|
Seated Height-Max
|
1.2 mm
|
Self Refresh
|
NO
|
Standby Current-Max
|
0.0005 A
|
Supply Current-Max
|
0.07 mA
|
Supply Voltage-Max (Vsup)
|
3.6 V
|
Supply Voltage-Min (Vsup)
|
3 V
|
Supply Voltage-Nom (Vsup)
|
3.3 V
|
Surface Mount
|
YES
|
Technology
|
CMOS
|
Temperature Grade
|
COMMERCIAL
|
Terminal Finish
|
Tin/Lead (Sn/Pb)
|
Terminal Form
|
GULL WING
|
Terminal Pitch
|
1.27 mm
|
Terminal Position
|
DUAL
|
Width
|
10.16 mm
|
Alternate Parts for K4E660812E-TC60
This table gives cross-reference parts and alternative options found for K4E660812E-TC60. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of K4E660812E-TC60, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
HYB3164805AT-60 | EDO DRAM, 8MX8, 60ns, CMOS, PDSO32, 0.400 INCH, PLASTIC, TSOP2-32 | Infineon Technologies AG | K4E660812E-TC60 vs HYB3164805AT-60 |
KM48V8004CS-6 | EDO DRAM, 8MX8, 60ns, CMOS, PDSO32, 0.400 INCH, PLASTIC, TSOP2-32 | Samsung Semiconductor | K4E660812E-TC60 vs KM48V8004CS-6 |
M5M467805ATP-6 | EDO DRAM, 8MX8, 60ns, CMOS, PDSO32, 0.400 INCH, 1.27 MM PITCH, PLASTIC, TSOP2-32 | Mitsubishi Electric | K4E660812E-TC60 vs M5M467805ATP-6 |
MT4LC8M8P4TG-6 | EDO DRAM, 8MX8, 60ns, CMOS, PDSO32, 0.400 INCH, PLASTIC, TSOP-32 | Micron Technology Inc | K4E660812E-TC60 vs MT4LC8M8P4TG-6 |
K4E660812D-TC60 | EDO DRAM, 8MX8, 60ns, CMOS, PDSO32, 0.400 INCH, PLASTIC, TSOP2-32 | Samsung Semiconductor | K4E660812E-TC60 vs K4E660812D-TC60 |
HM5164805TT-6 | EDO DRAM, 8MX8, 60ns, CMOS, PDSO32, 0.400 INCH, PLASTIC, TSOP2-32 | Hitachi Ltd | K4E660812E-TC60 vs HM5164805TT-6 |
GM71V64803AT-6 | EDO DRAM, 8MX8, 60ns, CMOS, PDSO32, | LG Semicon Co Ltd | K4E660812E-TC60 vs GM71V64803AT-6 |
K4E660812B-TC60 | EDO DRAM, 8MX8, 60ns, CMOS, PDSO32, 0.400 INCH, PLASTIC, TSOP2-32 | Samsung Semiconductor | K4E660812E-TC60 vs K4E660812B-TC60 |
GM71V64803CT-6 | EDO DRAM, 8MX8, 60ns, CMOS, PDSO32, | LG Semicon Co Ltd | K4E660812E-TC60 vs GM71V64803CT-6 |
M5M467805BTP-6 | EDO DRAM, 8MX8, 60ns, CMOS, PDSO32, 0.400 INCH, TSOP-32 | Mitsubishi Electric | K4E660812E-TC60 vs M5M467805BTP-6 |