Datasheets
K4E660812C-JL600 by: Samsung Semiconductor

EDO DRAM, 8MX8, 60ns, CMOS, PDSO32, 0.400 INCH, PLASTIC, SOJ-32

Part Details for K4E660812C-JL600 by Samsung Semiconductor

Overview of K4E660812C-JL600 by Samsung Semiconductor

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Applications Education and Research Consumer Electronics Computing and Data Storage

Part Details for K4E660812C-JL600

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K4E660812C-JL600 Part Data Attributes

K4E660812C-JL600 Samsung Semiconductor
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K4E660812C-JL600 Samsung Semiconductor EDO DRAM, 8MX8, 60ns, CMOS, PDSO32, 0.400 INCH, PLASTIC, SOJ-32
Rohs Code No
Part Life Cycle Code Obsolete
Ihs Manufacturer SAMSUNG SEMICONDUCTOR INC
Part Package Code SOJ
Package Description SOJ,
Pin Count 32
Reach Compliance Code compliant
ECCN Code EAR99
HTS Code 8542.32.00.02
Access Mode FAST PAGE WITH EDO
Access Time-Max 60 ns
Additional Feature RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH/SELF REFRESH
JESD-30 Code R-PDSO-J32
Length 20.96 mm
Memory Density 67108864 bit
Memory IC Type EDO DRAM
Memory Width 8
Number of Functions 1
Number of Ports 1
Number of Terminals 32
Number of Words 8388608 words
Number of Words Code 8000000
Operating Mode ASYNCHRONOUS
Operating Temperature-Max 70 °C
Operating Temperature-Min
Organization 8MX8
Package Body Material PLASTIC/EPOXY
Package Code SOJ
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 225
Qualification Status Not Qualified
Seated Height-Max 3.76 mm
Self Refresh YES
Supply Voltage-Max (Vsup) 3.6 V
Supply Voltage-Min (Vsup) 3 V
Supply Voltage-Nom (Vsup) 3.3 V
Surface Mount YES
Technology CMOS
Temperature Grade COMMERCIAL
Terminal Form J BEND
Terminal Pitch 1.27 mm
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30
Width 10.16 mm

Alternate Parts for K4E660812C-JL600

This table gives cross-reference parts and alternative options found for K4E660812C-JL600. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of K4E660812C-JL600, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
K4E640812C-JC60 EDO DRAM, 8MX8, 60ns, CMOS, PDSO32, 0.400 INCH, PLASTIC, SOJ-32 Samsung Semiconductor K4E660812C-JL600 vs K4E640812C-JC60
K4E660812C-JC600 EDO DRAM, 8MX8, 60ns, CMOS, PDSO32, 0.400 INCH, PLASTIC, SOJ-32 Samsung Semiconductor K4E660812C-JL600 vs K4E660812C-JC600
K4E640812D-JI60 EDO DRAM, 8MX8, 60ns, CMOS, PDSO32, 0.400 INCH, PLASTIC, SOJ-32 Samsung Semiconductor K4E660812C-JL600 vs K4E640812D-JI60
MT4LC8M8W4DJ-60TR EDO DRAM, 8MX8, 60ns, CMOS, PDSO32, 0.400 INCH, PLASTIC, SOJ-32 Micron Technology Inc K4E660812C-JL600 vs MT4LC8M8W4DJ-60TR
IBM0164805BJ3C-60 EDO DRAM, 8MX8, 60ns, CMOS, PDSO32, 0.400 X 0.825 INCH, PLASTIC, SOJ-32 IBM K4E660812C-JL600 vs IBM0164805BJ3C-60
HM5164805FLJ-6 EDO DRAM, 8MX8, 60ns, CMOS, PDSO32, 0.400 INCH, PLASTIC, SOJ-32 Elpida Memory Inc K4E660812C-JL600 vs HM5164805FLJ-6
K4E640812C-JL600 EDO DRAM, 8MX8, 60ns, CMOS, PDSO32, 0.400 INCH, PLASTIC, SOJ-32 Samsung Semiconductor K4E660812C-JL600 vs K4E640812C-JL600
UPD4265805LE-A60 EDO DRAM, 8MX8, 60ns, CMOS, PDSO32, 0.400 INCH, PLASTIC, SOJ-32 NEC Electronics Group K4E660812C-JL600 vs UPD4265805LE-A60
MT4LC8M8W5DJ-60TR EDO DRAM, 8MX8, 60ns, CMOS, PDSO32, 0.400 INCH, PLASTIC, SOJ-32 Micron Technology Inc K4E660812C-JL600 vs MT4LC8M8W5DJ-60TR
M5M465805BJ-6 EDO DRAM, 8MX8, 60ns, CMOS, PDSO32, 0.400 INCH, SOJ-32 Mitsubishi Electric K4E660812C-JL600 vs M5M465805BJ-6
Part Number Description Manufacturer Compare
HM5165800AJ-5 Fast Page DRAM, 8MX8, 50ns, CMOS, PDSO32, 0.400 INCH, PLASTIC, SOJ-32 Hitachi Ltd K4E660812C-JL600 vs HM5165800AJ-5
KM48V8000CK-L5 Fast Page DRAM, 8MX8, 50ns, CMOS, PDSO32, 0.400 INCH, PLASTIC, SOJ-32 Samsung Semiconductor K4E660812C-JL600 vs KM48V8000CK-L5
KM48V8100BJ-L6 Fast Page DRAM, 8MX8, 60ns, CMOS, PDSO32, 0.400 INCH, PLASTIC, SOJ-32 Samsung Semiconductor K4E660812C-JL600 vs KM48V8100BJ-L6
KM48V8104J-6 EDO DRAM, 8MX8, 60ns, CMOS, PDSO32, PLASTIC, SOJ-32 Samsung Semiconductor K4E660812C-JL600 vs KM48V8104J-6
HYB3164800AJ-60 Fast Page DRAM, 8MX8, 60ns, CMOS, PDSO32, 0.400 INCH, PLASTIC, SOJ-32 Infineon Technologies AG K4E660812C-JL600 vs HYB3164800AJ-60
V53C365805AK50 EDO DRAM, 8MX8, 50ns, CMOS, PDSO32, 0.400 INCH, PLASTIC, SOJ-32 Mosel Vitelic Corporation K4E660812C-JL600 vs V53C365805AK50
HM5165805AJ-6 EDO DRAM, 8MX8, 60ns, CMOS, PDSO32, 0.400 INCH, PLASTIC, SOJ-32 Hitachi Ltd K4E660812C-JL600 vs HM5165805AJ-6
K4E660812C-JC500 EDO DRAM, 8MX8, 50ns, CMOS, PDSO32, 0.400 INCH, PLASTIC, SOJ-32 Samsung Semiconductor K4E660812C-JL600 vs K4E660812C-JC500
M5M465805DJ-5S EDO DRAM, 8MX8, 50ns, CMOS, PDSO32, 0.400 INCH, SOJ-32 Mitsubishi Electric K4E660812C-JL600 vs M5M465805DJ-5S
UPD4265805LE-A60 EDO DRAM, 8MX8, 60ns, CMOS, PDSO32, 0.400 INCH, PLASTIC, SOJ-32 NEC Electronics Group K4E660812C-JL600 vs UPD4265805LE-A60

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