Part Details for K4E660812B-JC50 by Samsung Semiconductor
Overview of K4E660812B-JC50 by Samsung Semiconductor
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (10 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Education and Research
Consumer Electronics
Computing and Data Storage
Part Details for K4E660812B-JC50
K4E660812B-JC50 CAD Models
K4E660812B-JC50 Part Data Attributes
|
K4E660812B-JC50
Samsung Semiconductor
Buy Now
Datasheet
|
Compare Parts:
K4E660812B-JC50
Samsung Semiconductor
EDO DRAM, 8MX8, 50ns, CMOS, PDSO32, 0.400 INCH, PLASTIC, SOJ-32
|
Rohs Code | No | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | SAMSUNG SEMICONDUCTOR INC | |
Part Package Code | SOJ | |
Package Description | SOJ, SOJ32,.44 | |
Pin Count | 32 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
HTS Code | 8542.32.00.02 | |
Access Mode | FAST PAGE WITH EDO | |
Access Time-Max | 50 ns | |
Additional Feature | RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH | |
I/O Type | COMMON | |
JESD-30 Code | R-PDSO-J32 | |
JESD-609 Code | e0 | |
Length | 20.96 mm | |
Memory Density | 67108864 bit | |
Memory IC Type | EDO DRAM | |
Memory Width | 8 | |
Number of Functions | 1 | |
Number of Ports | 1 | |
Number of Terminals | 32 | |
Number of Words | 8388608 words | |
Number of Words Code | 8000000 | |
Operating Mode | ASYNCHRONOUS | |
Operating Temperature-Max | 70 °C | |
Operating Temperature-Min | ||
Organization | 8MX8 | |
Output Characteristics | 3-STATE | |
Package Body Material | PLASTIC/EPOXY | |
Package Code | SOJ | |
Package Equivalence Code | SOJ32,.44 | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Qualification Status | Not Qualified | |
Refresh Cycles | 8192 | |
Seated Height-Max | 3.76 mm | |
Self Refresh | NO | |
Standby Current-Max | 0.0005 A | |
Supply Current-Max | 0.09 mA | |
Supply Voltage-Max (Vsup) | 3.6 V | |
Supply Voltage-Min (Vsup) | 3 V | |
Supply Voltage-Nom (Vsup) | 3.3 V | |
Surface Mount | YES | |
Technology | CMOS | |
Temperature Grade | COMMERCIAL | |
Terminal Finish | TIN LEAD | |
Terminal Form | J BEND | |
Terminal Pitch | 1.27 mm | |
Terminal Position | DUAL | |
Width | 10.16 mm |
Alternate Parts for K4E660812B-JC50
This table gives cross-reference parts and alternative options found for K4E660812B-JC50. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of K4E660812B-JC50, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
K4E660812B-JL450 | EDO DRAM, 8MX8, 50ns, CMOS, PDSO32, 0.400 INCH, PLASTIC, SOJ-32 | Samsung Semiconductor | K4E660812B-JC50 vs K4E660812B-JL450 |
K4E660812C-JC50 | EDO DRAM, 8MX8, 50ns, CMOS, PDSO32, 0.400 INCH, PLASTIC, SOJ-32 | Samsung Semiconductor | K4E660812B-JC50 vs K4E660812C-JC50 |
HM5165805ALJ-5 | EDO DRAM, 8MX8, 50ns, CMOS, PDSO32, 0.400 INCH, PLASTIC, SOJ-32 | Hitachi Ltd | K4E660812B-JC50 vs HM5165805ALJ-5 |
KM48V8004J-L5 | EDO DRAM, 8MX8, 50ns, CMOS, PDSO32, PLASTIC, SOJ-32 | Samsung Semiconductor | K4E660812B-JC50 vs KM48V8004J-L5 |
GM71V64803CLJ-5 | EDO DRAM, 8MX8, 50ns, CMOS, PDSO32, 0.400 INCH, PLASTIC, SOJ-32 | SK Hynix Inc | K4E660812B-JC50 vs GM71V64803CLJ-5 |
UPD42S64805LE-A50 | EDO DRAM, 8MX8, 50ns, CMOS, PDSO32, 0.400 INCH, PLASTIC, SOJ-32 | NEC Electronics America Inc | K4E660812B-JC50 vs UPD42S64805LE-A50 |
K4E660812C-JL500 | EDO DRAM, 8MX8, 50ns, CMOS, PDSO32, 0.400 INCH, PLASTIC, SOJ-32 | Samsung Semiconductor | K4E660812B-JC50 vs K4E660812C-JL500 |
K4E640812D-JI50 | EDO DRAM, 8MX8, 50ns, CMOS, PDSO32, 0.400 INCH, PLASTIC, SOJ-32 | Samsung Semiconductor | K4E660812B-JC50 vs K4E640812D-JI50 |
TC5164805AJ-50 | IC 8M X 8 EDO DRAM, 50 ns, PDSO32, 0.400 INCH, 1.27 MM PITCH, PLASTIC, SOJ-32, Dynamic RAM | Toshiba America Electronic Components | K4E660812B-JC50 vs TC5164805AJ-50 |
MT4LC8M8C2DJ-5TR | EDO DRAM, 8MX8, 50ns, CMOS, PDSO32, 0.400 INCH, PLASTIC, SOJ-32 | Micron Technology Inc | K4E660812B-JC50 vs MT4LC8M8C2DJ-5TR |