Datasheets
K4E641612B-TL60RM by: Samsung Semiconductor

EDO DRAM, 4MX16, 60ns, CMOS, PDSO50

Part Details for K4E641612B-TL60RM by Samsung Semiconductor

Overview of K4E641612B-TL60RM by Samsung Semiconductor

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Part Details for K4E641612B-TL60RM

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K4E641612B-TL60RM Part Data Attributes

K4E641612B-TL60RM Samsung Semiconductor
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K4E641612B-TL60RM Samsung Semiconductor EDO DRAM, 4MX16, 60ns, CMOS, PDSO50
Rohs Code No
Part Life Cycle Code Obsolete
Ihs Manufacturer SAMSUNG SEMICONDUCTOR INC
Package Description TSOP, TSOP50,.46,32
Reach Compliance Code unknown
ECCN Code EAR99
HTS Code 8542.32.00.02
Access Time-Max 60 ns
I/O Type COMMON
JESD-30 Code R-PDSO-G50
JESD-609 Code e0
Memory Density 67108864 bit
Memory IC Type EDO DRAM
Memory Width 16
Number of Terminals 50
Number of Words 4194304 words
Number of Words Code 4000000
Operating Temperature-Max 70 °C
Operating Temperature-Min
Organization 4MX16
Output Characteristics 3-STATE
Package Body Material PLASTIC/EPOXY
Package Code TSOP
Package Equivalence Code TSOP50,.46,32
Package Shape RECTANGULAR
Package Style SMALL OUTLINE, THIN PROFILE
Qualification Status Not Qualified
Refresh Cycles 4096
Self Refresh YES
Standby Current-Max 0.0003 A
Supply Current-Max 0.11 mA
Supply Voltage-Nom (Vsup) 3.3 V
Surface Mount YES
Technology CMOS
Temperature Grade COMMERCIAL
Terminal Finish Tin/Lead (Sn/Pb)
Terminal Form GULL WING
Terminal Pitch 0.8 mm
Terminal Position DUAL

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