Datasheets
K4E160811D-BL600 by: Samsung Semiconductor

EDO DRAM, 2MX8, 60ns, CMOS, PDSO28, 0.300 INCH, SOJ-28

Part Details for K4E160811D-BL600 by Samsung Semiconductor

Overview of K4E160811D-BL600 by Samsung Semiconductor

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Applications Computing and Data Storage

Part Details for K4E160811D-BL600

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K4E160811D-BL600 Part Data Attributes

K4E160811D-BL600 Samsung Semiconductor
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K4E160811D-BL600 Samsung Semiconductor EDO DRAM, 2MX8, 60ns, CMOS, PDSO28, 0.300 INCH, SOJ-28
Part Life Cycle Code Obsolete
Ihs Manufacturer SAMSUNG SEMICONDUCTOR INC
Part Package Code SOJ
Package Description SOJ,
Pin Count 28
Reach Compliance Code unknown
ECCN Code EAR99
HTS Code 8542.32.00.02
Access Mode FAST PAGE WITH EDO
Access Time-Max 60 ns
Additional Feature RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH/SELF REFRESH
JESD-30 Code R-PDSO-J28
Length 18.42 mm
Memory Density 16777216 bit
Memory IC Type EDO DRAM
Memory Width 8
Number of Functions 1
Number of Ports 1
Number of Terminals 28
Number of Words 2097152 words
Number of Words Code 2000000
Operating Mode ASYNCHRONOUS
Operating Temperature-Max 70 °C
Operating Temperature-Min
Organization 2MX8
Package Body Material PLASTIC/EPOXY
Package Code SOJ
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Qualification Status Not Qualified
Seated Height-Max 3.76 mm
Self Refresh YES
Supply Voltage-Max (Vsup) 5.5 V
Supply Voltage-Min (Vsup) 4.5 V
Supply Voltage-Nom (Vsup) 5 V
Surface Mount YES
Technology CMOS
Temperature Grade COMMERCIAL
Terminal Form J BEND
Terminal Pitch 1.27 mm
Terminal Position DUAL
Width 7.62 mm

Alternate Parts for K4E160811D-BL600

This table gives cross-reference parts and alternative options found for K4E160811D-BL600. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of K4E160811D-BL600, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
K4E160811C-BL600 EDO DRAM, 2MX8, 60ns, CMOS, PDSO28, 0.300 INCH, PLASTIC, SOJ-28 Samsung Semiconductor K4E160811D-BL600 vs K4E160811C-BL600
HM5117805BS-6 EDO DRAM, 2MX8, 60ns, CMOS, PDSO28, 0.300 INCH, PLASTIC, SOJ-28 Hitachi Ltd K4E160811D-BL600 vs HM5117805BS-6
HM5117805BLS-6 EDO DRAM, 2MX8, 60ns, CMOS, PDSO28, 0.300 INCH, PLASTIC, SOJ-28 Hitachi Ltd K4E160811D-BL600 vs HM5117805BLS-6
K4E160811D-BC600 EDO DRAM, 2MX8, 60ns, CMOS, PDSO28, 0.300 INCH, SOJ-28 Samsung Semiconductor K4E160811D-BL600 vs K4E160811D-BC600
IS41C8200-60JI EDO DRAM, 2MX8, 60ns, CMOS, PDSO28, 0.300 INCH, SOJ-28 Integrated Silicon Solution Inc K4E160811D-BL600 vs IS41C8200-60JI
HY5116804CSLJ-60 EDO DRAM, 2MX8, 60ns, CMOS, PDSO28, 0.300 INCH, PLASTIC, SOJ-28 SK Hynix Inc K4E160811D-BL600 vs HY5116804CSLJ-60
IS41C8200-60J EDO DRAM, 2MX8, 60ns, CMOS, PDSO28, 0.300 INCH, SOJ-28 Integrated Silicon Solution Inc K4E160811D-BL600 vs IS41C8200-60J
K4E170811D-BL600 EDO DRAM, 2MX8, 60ns, CMOS, PDSO28, 0.300 INCH, SOJ-28 Samsung Semiconductor K4E160811D-BL600 vs K4E170811D-BL600
K4E170811C-BL600 EDO DRAM, 2MX8, 60ns, CMOS, PDSO28, 0.300 INCH, PLASTIC, SOJ-28 Samsung Semiconductor K4E160811D-BL600 vs K4E170811C-BL600
MT4C2M8E7DJ-6STR EDO DRAM, 2MX8, 60ns, CMOS, PDSO28, 0.300 INCH, PLASTIC, SOJ-28 Micron Technology Inc K4E160811D-BL600 vs MT4C2M8E7DJ-6STR
Part Number Description Manufacturer Compare
HY5117804BSLT-60 EDO DRAM, 2MX8, 60ns, CMOS, PDSO28, 0.300 INCH, PLASTIC, TSOP2-28 SK Hynix Inc K4E160811D-BL600 vs HY5117804BSLT-60
MB8117805B-60PFTN 2MX8 EDO DRAM, 60ns, PDSO28, 0.400 INCH, PLASTIC, TSOP2-28 FUJITSU Semiconductor Limited K4E160811D-BL600 vs MB8117805B-60PFTN
K4E170811D-BL60 EDO DRAM, 2MX8, 60ns, CMOS, PDSO28, 0.300 INCH, PLASTIC, SOJ-28 Samsung Semiconductor K4E160811D-BL600 vs K4E170811D-BL60
KM48C2004CK-L6 EDO DRAM, 2MX8, 60ns, CMOS, PDSO28, 0.300 INCH, PLASTIC, SOJ-28 Samsung Semiconductor K4E160811D-BL600 vs KM48C2004CK-L6
IS41C82002-60TI EDO DRAM, 2MX8, 60ns, CMOS, PDSO28, TSOP2-28 Integrated Silicon Solution Inc K4E160811D-BL600 vs IS41C82002-60TI
HM5117805BS-6 EDO DRAM, 2MX8, 60ns, CMOS, PDSO28, 0.300 INCH, PLASTIC, SOJ-28 Hitachi Ltd K4E160811D-BL600 vs HM5117805BS-6
K4E160811D-FL60 EDO DRAM, 2MX8, 60ns, CMOS, PDSO28, 0.300 INCH, PLASTIC, TSOP2-28 Samsung Semiconductor K4E160811D-BL600 vs K4E160811D-FL60
MSM5116805A-60JS EDO DRAM, 2MX8, 60ns, CMOS, PDSO28, 0.400 INCH, PLASTIC, SOJ-28 OKI Electric Industry Co Ltd K4E160811D-BL600 vs MSM5116805A-60JS
KM48C2104CK-L6 EDO DRAM, 2MX8, 60ns, CMOS, PDSO28, 0.300 INCH, PLASTIC, SOJ-28 Samsung Semiconductor K4E160811D-BL600 vs KM48C2104CK-L6
M5M417805CTP-6ST EDO DRAM, 2MX8, 60ns, CMOS, PDSO28, 0.400 INCH, 1.27 MM PITCH, PLASTIC, TSOP2-28 Mitsubishi Electric K4E160811D-BL600 vs M5M417805CTP-6ST

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