Part Details for K4E151611C-JL60 by Samsung Semiconductor
Overview of K4E151611C-JL60 by Samsung Semiconductor
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (10 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
Internet of Things (IoT)
Computing and Data Storage
Available Datasheets
Part # | Manufacturer | Description | Datasheet |
---|---|---|---|
RJL60S5DPP-E0#T2 | Renesas Electronics Corporation | 600V - 20A - Sj MOSFET High Speed Power Switching, TO-220FP, /Tube | |
RJL60S5DPK-M0#T0 | Renesas Electronics Corporation | 600V - 20A - Sj MOSFET High Speed Power Switching | |
RJL6012DPE-00#J3 | Renesas Electronics Corporation | Nch Single Power Mosfet 600V 10A 1100Mohm LDPAK(S)-(1)/To-263 |
Part Details for K4E151611C-JL60
K4E151611C-JL60 CAD Models
K4E151611C-JL60 Part Data Attributes
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K4E151611C-JL60
Samsung Semiconductor
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Datasheet
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K4E151611C-JL60
Samsung Semiconductor
EDO DRAM, 1MX16, 60ns, CMOS, PDSO42, 0.400 INCH, PLASTIC, SOJ-42
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Rohs Code | No | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | SAMSUNG SEMICONDUCTOR INC | |
Part Package Code | SOJ | |
Package Description | SOJ, SOJ42,.44 | |
Pin Count | 42 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
HTS Code | 8542.32.00.02 | |
Access Mode | FAST PAGE WITH EDO | |
Access Time-Max | 60 ns | |
Additional Feature | RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH/SELF REFRESH | |
I/O Type | COMMON | |
JESD-30 Code | R-PDSO-J42 | |
JESD-609 Code | e0 | |
Length | 27.31 mm | |
Memory Density | 16777216 bit | |
Memory IC Type | EDO DRAM | |
Memory Width | 16 | |
Number of Functions | 1 | |
Number of Ports | 1 | |
Number of Terminals | 42 | |
Number of Words | 1048576 words | |
Number of Words Code | 1000000 | |
Operating Mode | ASYNCHRONOUS | |
Operating Temperature-Max | 70 °C | |
Operating Temperature-Min | ||
Organization | 1MX16 | |
Output Characteristics | 3-STATE | |
Package Body Material | PLASTIC/EPOXY | |
Package Code | SOJ | |
Package Equivalence Code | SOJ42,.44 | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Qualification Status | Not Qualified | |
Refresh Cycles | 1024 | |
Seated Height-Max | 3.76 mm | |
Self Refresh | YES | |
Standby Current-Max | 0.0002 A | |
Supply Current-Max | 0.13 mA | |
Supply Voltage-Max (Vsup) | 5.5 V | |
Supply Voltage-Min (Vsup) | 4.5 V | |
Supply Voltage-Nom (Vsup) | 5 V | |
Surface Mount | YES | |
Technology | CMOS | |
Temperature Grade | COMMERCIAL | |
Terminal Finish | TIN LEAD | |
Terminal Form | J BEND | |
Terminal Pitch | 1.27 mm | |
Terminal Position | DUAL | |
Width | 10.16 mm |
Alternate Parts for K4E151611C-JL60
This table gives cross-reference parts and alternative options found for K4E151611C-JL60. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of K4E151611C-JL60, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
HY5118164BSLJC-60 | EDO DRAM, 1MX16, 60ns, CMOS, PDSO42, 0.400 INCH, PLASTIC, SOJ-42 | SK Hynix Inc | K4E151611C-JL60 vs HY5118164BSLJC-60 |
KM416C1204AJ-L6 | EDO DRAM, 1MX16, 60ns, CMOS, PDSO42, 0.400 INCH, SOJ-42 | Samsung Semiconductor | K4E151611C-JL60 vs KM416C1204AJ-L6 |
HY5116164BSLJC-60 | EDO DRAM, 1MX16, 60ns, CMOS, PDSO42, 0.400 INCH, PLASTIC, SOJ-42 | SK Hynix Inc | K4E151611C-JL60 vs HY5116164BSLJC-60 |
V53C516165AK60L | EDO DRAM, 1MX16, 60ns, CMOS, PDSO42, 0.400 INCH, PLASTIC, SOJ-42 | Mosel Vitelic Corporation | K4E151611C-JL60 vs V53C516165AK60L |
K4E151611D-JL60 | EDO DRAM, 1MX16, 60ns, CMOS, PDSO42, 0.400 INCH, PLASTIC, SOJ-42 | Samsung Semiconductor | K4E151611C-JL60 vs K4E151611D-JL60 |
MT4C1M16E5DJ-6S | EDO DRAM, 1MX16, 60ns, CMOS, PDSO42, 0.400 INCH, PLASTIC, SOJ-42 | Micron Technology Inc | K4E151611C-JL60 vs MT4C1M16E5DJ-6S |
KM416C1004AJ-L6 | EDO DRAM, 1MX16, 60ns, CMOS, PDSO42, 0.400 INCH, SOJ-42 | Samsung Semiconductor | K4E151611C-JL60 vs KM416C1004AJ-L6 |
M5M418165BJ-6ST | EDO DRAM, 1MX16, 60ns, CMOS, PDSO42, 0.400 INCH, 1.27 MM PITCH, PLASTIC, SOJ-42 | Mitsubishi Electric | K4E151611C-JL60 vs M5M418165BJ-6ST |
HY5118164CSLJC-60 | EDO DRAM, 1MX16, 60ns, CMOS, PDSO42, 0.400 INCH, PLASTIC, SOJ-42 | SK Hynix Inc | K4E151611C-JL60 vs HY5118164CSLJC-60 |
MSM5116165D-60JS | EDO DRAM, 1MX16, 60ns, CMOS, PDSO42, 0.400 INCH, 1.27 MM PITCH, PLASTIC, SOJ-42 | OKI Electric Industry Co Ltd | K4E151611C-JL60 vs MSM5116165D-60JS |