Part Details for K4D26323QG-VC250 by Samsung Semiconductor
Overview of K4D26323QG-VC250 by Samsung Semiconductor
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (1 replacement)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Consumer Electronics
Part Details for K4D26323QG-VC250
K4D26323QG-VC250 CAD Models
K4D26323QG-VC250 Part Data Attributes
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K4D26323QG-VC250
Samsung Semiconductor
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Datasheet
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K4D26323QG-VC250
Samsung Semiconductor
DDR DRAM, 4MX32, 0.45ns, CMOS, PBGA144, LEAD FREE, FBGA-144
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Rohs Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | SAMSUNG SEMICONDUCTOR INC | |
Part Package Code | BGA | |
Package Description | LFBGA, BGA144,12X12,32 | |
Pin Count | 144 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
HTS Code | 8542.32.00.02 | |
Access Mode | FOUR BANK PAGE BURST | |
Access Time-Max | 0.45 ns | |
Additional Feature | AUTO/SELF REFRESH | |
Clock Frequency-Max (fCLK) | 400 MHz | |
I/O Type | COMMON | |
Interleaved Burst Length | 2,4,8 | |
JESD-30 Code | S-PBGA-B144 | |
JESD-609 Code | e1 | |
Length | 12 mm | |
Memory Density | 134217728 bit | |
Memory IC Type | GDDR1 DRAM | |
Memory Width | 32 | |
Moisture Sensitivity Level | 3 | |
Number of Functions | 1 | |
Number of Ports | 1 | |
Number of Terminals | 144 | |
Number of Words | 4194304 words | |
Number of Words Code | 4000000 | |
Operating Mode | SYNCHRONOUS | |
Operating Temperature-Max | 65 °C | |
Operating Temperature-Min | ||
Organization | 4MX32 | |
Output Characteristics | 3-STATE | |
Package Body Material | PLASTIC/EPOXY | |
Package Code | LFBGA | |
Package Equivalence Code | BGA144,12X12,32 | |
Package Shape | SQUARE | |
Package Style | GRID ARRAY, LOW PROFILE, FINE PITCH | |
Qualification Status | Not Qualified | |
Refresh Cycles | 4096 | |
Seated Height-Max | 1.4 mm | |
Self Refresh | YES | |
Sequential Burst Length | 2,4,8 | |
Standby Current-Max | 0.01 A | |
Supply Current-Max | 0.475 mA | |
Supply Voltage-Max (Vsup) | 1.9 V | |
Supply Voltage-Min (Vsup) | 1.7 V | |
Supply Voltage-Nom (Vsup) | 1.8 V | |
Surface Mount | YES | |
Technology | CMOS | |
Temperature Grade | COMMERCIAL | |
Terminal Finish | TIN SILVER COPPER | |
Terminal Form | BALL | |
Terminal Pitch | 0.8 mm | |
Terminal Position | BOTTOM | |
Width | 12 mm |
Alternate Parts for K4D26323QG-VC250
This table gives cross-reference parts and alternative options found for K4D26323QG-VC250. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of K4D26323QG-VC250, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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K4D26323QG-GC250 | DDR DRAM, 4MX32, 0.45ns, CMOS, PBGA144, FBGA-144 | Samsung Semiconductor | K4D26323QG-VC250 vs K4D26323QG-GC250 |