Part Details for K4B2G0446C-HCF70 by Samsung Semiconductor
Overview of K4B2G0446C-HCF70 by Samsung Semiconductor
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Consumer Electronics
Computing and Data Storage
Part Details for K4B2G0446C-HCF70
K4B2G0446C-HCF70 CAD Models
K4B2G0446C-HCF70 Part Data Attributes
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K4B2G0446C-HCF70
Samsung Semiconductor
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Datasheet
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K4B2G0446C-HCF70
Samsung Semiconductor
DDR DRAM, 512MX4, 0.4ns, CMOS, PBGA78, HALOGEN FREE AND ROHS COMPLIANT, FBGA-78
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | SAMSUNG SEMICONDUCTOR INC | |
| Part Package Code | BGA | |
| Package Description | TFBGA, BGA78,9X13,32 | |
| Pin Count | 78 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8542.32.00.36 | |
| Access Mode | MULTI BANK PAGE BURST | |
| Access Time-Max | 0.4 ns | |
| Additional Feature | AUTO/SELF REFRESH | |
| Clock Frequency-Max (fCLK) | 400 MHz | |
| I/O Type | COMMON | |
| Interleaved Burst Length | 8 | |
| JESD-30 Code | R-PBGA-B78 | |
| JESD-609 Code | e1 | |
| Length | 11 mm | |
| Memory Density | 2147483648 bit | |
| Memory IC Type | DDR3 DRAM | |
| Memory Width | 4 | |
| Moisture Sensitivity Level | 3 | |
| Number of Functions | 1 | |
| Number of Ports | 1 | |
| Number of Terminals | 78 | |
| Number of Words | 536870912 words | |
| Number of Words Code | 512000000 | |
| Operating Mode | SYNCHRONOUS | |
| Operating Temperature-Max | 85 °C | |
| Operating Temperature-Min | ||
| Organization | 512MX4 | |
| Output Characteristics | 3-STATE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Code | TFBGA | |
| Package Equivalence Code | BGA78,9X13,32 | |
| Package Shape | RECTANGULAR | |
| Package Style | GRID ARRAY, THIN PROFILE, FINE PITCH | |
| Peak Reflow Temperature (Cel) | 260 | |
| Qualification Status | Not Qualified | |
| Refresh Cycles | 8192 | |
| Seated Height-Max | 1.2 mm | |
| Self Refresh | YES | |
| Sequential Burst Length | 8 | |
| Supply Voltage-Max (Vsup) | 1.575 V | |
| Supply Voltage-Min (Vsup) | 1.425 V | |
| Supply Voltage-Nom (Vsup) | 1.5 V | |
| Surface Mount | YES | |
| Technology | CMOS | |
| Temperature Grade | OTHER | |
| Terminal Finish | TIN SILVER COPPER | |
| Terminal Form | BALL | |
| Terminal Pitch | 0.8 mm | |
| Terminal Position | BOTTOM | |
| Width | 7.5 mm |
Alternate Parts for K4B2G0446C-HCF70
This table gives cross-reference parts and alternative options found for K4B2G0446C-HCF70. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of K4B2G0446C-HCF70, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| H5TQ2G43AMP-G7C | SK Hynix Inc | Check for Price | DDR DRAM, 512MX4, CMOS, PBGA78, FBGA-78 | K4B2G0446C-HCF70 vs H5TQ2G43AMP-G7C |
| H5TQ1G43AFP-G8C | SK Hynix Inc | Check for Price | DDR DRAM, 256MX4, 0.15ns, CMOS, PBGA78, FBGA-78 | K4B2G0446C-HCF70 vs H5TQ1G43AFP-G8C |
| MT41J256M4JP-125E:G | Micron Technology Inc | Check for Price | DDR DRAM, 256MX4, CMOS, PBGA78, 8 X 11.50 MM, LEAD FREE, FBGA-78 | K4B2G0446C-HCF70 vs MT41J256M4JP-125E:G |
| MT41J512M4THV-25:F | Micron Technology Inc | Check for Price | DDR DRAM, 256MX4, CMOS, PBGA78, 8 X 11.50 MM, LEAD FREE, FBGA-78 | K4B2G0446C-HCF70 vs MT41J512M4THV-25:F |
| MT41J256M4JP-125EAT:F | Micron Technology Inc | Check for Price | DDR DRAM, 256MX4, CMOS, PBGA78, 8 X 11.50 MM, LEAD FREE, FBGA-78 | K4B2G0446C-HCF70 vs MT41J256M4JP-125EAT:F |
| EDJ1104BBSE-8A-F | Elpida Memory Inc | Check for Price | DDR DRAM, 256MX4, 0.4ns, CMOS, PBGA78, HALOGEN FREE AND ROHS COMPLIANT, FBGA-78 | K4B2G0446C-HCF70 vs EDJ1104BBSE-8A-F |
| MT41J256M4JP-15E:G | Micron Technology Inc | Check for Price | DDR DRAM, 256MX4, 0.125ns, CMOS, PBGA78, 8 X 11.50 MM, LEAD FREE, FBGA-78 | K4B2G0446C-HCF70 vs MT41J256M4JP-15E:G |
| MT41J256M4JP-15F:F | Micron Technology Inc | Check for Price | DDR DRAM, 256MX4, 0.255ns, CMOS, PBGA78, 8 X 11.50 MM, LEAD FREE, FBGA-78 | K4B2G0446C-HCF70 vs MT41J256M4JP-15F:F |
| IDSH1G-02A1F1C-13J | Qimonda AG | Check for Price | DDR DRAM, 256MX4, 20ns, CMOS, PBGA78, 0.80 MM PITCH, GREEN, PLASTIC, TFBGA-78 | K4B2G0446C-HCF70 vs IDSH1G-02A1F1C-13J |
| NT5CB256M4CN-DG | Nanya Technology Corporation | Check for Price | DDR DRAM, 256MX4, 20ns, CMOS, PBGA78, 0.80 MM PITCH, ROHS COMPLIANT, BGA-78 | K4B2G0446C-HCF70 vs NT5CB256M4CN-DG |