Datasheets
K4B2G0446B-HCK00 by: Samsung Semiconductor

DDR DRAM, 512MX4, 0.225ns, CMOS, PBGA78, HALOGEN FREE AND ROHS COMPLIANT, FBGA-78

Part Details for K4B2G0446B-HCK00 by Samsung Semiconductor

Overview of K4B2G0446B-HCK00 by Samsung Semiconductor

Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.

Applications Consumer Electronics Computing and Data Storage

Part Details for K4B2G0446B-HCK00

K4B2G0446B-HCK00 CAD Models

There are no models available for this part yet.

Sign in to request this CAD model.

Register or Sign In

K4B2G0446B-HCK00 Part Data Attributes

K4B2G0446B-HCK00 Samsung Semiconductor
Buy Now Datasheet
Compare Parts:
K4B2G0446B-HCK00 Samsung Semiconductor DDR DRAM, 512MX4, 0.225ns, CMOS, PBGA78, HALOGEN FREE AND ROHS COMPLIANT, FBGA-78
Select a part to compare:
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer SAMSUNG SEMICONDUCTOR INC
Part Package Code BGA
Package Description TFBGA, BGA78,9X13,32
Pin Count 78
Reach Compliance Code compliant
ECCN Code EAR99
HTS Code 8542.32.00.36
Access Mode MULTI BANK PAGE BURST
Access Time-Max 0.225 ns
Additional Feature AUTO/SELF REFRESH
Clock Frequency-Max (fCLK) 800 MHz
I/O Type COMMON
Interleaved Burst Length 8
JESD-30 Code R-PBGA-B78
Length 11.5 mm
Memory Density 2147483648 bit
Memory IC Type DDR3 DRAM
Memory Width 4
Number of Functions 1
Number of Ports 1
Number of Terminals 78
Number of Words 536870912 words
Number of Words Code 512000000
Operating Mode SYNCHRONOUS
Operating Temperature-Max 85 °C
Operating Temperature-Min
Organization 512MX4
Output Characteristics 3-STATE
Package Body Material PLASTIC/EPOXY
Package Code TFBGA
Package Equivalence Code BGA78,9X13,32
Package Shape RECTANGULAR
Package Style GRID ARRAY, THIN PROFILE, FINE PITCH
Peak Reflow Temperature (Cel) 260
Qualification Status Not Qualified
Refresh Cycles 8192
Seated Height-Max 1.2 mm
Self Refresh YES
Sequential Burst Length 8
Standby Current-Max 0.012 A
Supply Current-Max 0.3 mA
Supply Voltage-Max (Vsup) 1.575 V
Supply Voltage-Min (Vsup) 1.425 V
Supply Voltage-Nom (Vsup) 1.5 V
Surface Mount YES
Technology CMOS
Temperature Grade OTHER
Terminal Form BALL
Terminal Pitch 0.8 mm
Terminal Position BOTTOM
Width 9 mm

Alternate Parts for K4B2G0446B-HCK00

This table gives cross-reference parts and alternative options found for K4B2G0446B-HCK00. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of K4B2G0446B-HCK00, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
K4B2G0446D-HCK0T Samsung Semiconductor Check for Price DDR DRAM, 512MX4, 0.225ns, CMOS, PBGA78, K4B2G0446B-HCK00 vs K4B2G0446D-HCK0T
K4B2G0446B-HCK0T Samsung Semiconductor Check for Price DDR DRAM, 512MX4, 0.225ns, CMOS, PBGA78 K4B2G0446B-HCK00 vs K4B2G0446B-HCK0T
K4B2G0446D-HCK0 Samsung Semiconductor Check for Price DDR DRAM, 512MX4, 0.225ns, CMOS, PBGA78, K4B2G0446B-HCK00 vs K4B2G0446D-HCK0
K4B2G0446D-HCK00 Samsung Semiconductor Check for Price DDR DRAM, 512MX4, 0.225ns, CMOS, PBGA78, K4B2G0446B-HCK00 vs K4B2G0446D-HCK00
Part Number Manufacturer Composite Price Description Compare
MT41J256M4HX-187IT:E Micron Technology Inc Check for Price DDR DRAM, 256MX4, CMOS, PBGA78, 9 X 11.50 MM, LEAD FREE, FBGA-78 K4B2G0446B-HCK00 vs MT41J256M4HX-187IT:E
H5TQ2G43BMR-G7C SK Hynix Inc Check for Price DDR DRAM, 512MX4, CMOS, PBGA78, FBGA-78 K4B2G0446B-HCK00 vs H5TQ2G43BMR-G7C
MT41J256M4HX-125E:B Micron Technology Inc Check for Price DDR DRAM, 256MX4, CMOS, PBGA78, 9 X 11.50 MM, LEAD FREE, FBGA-78 K4B2G0446B-HCK00 vs MT41J256M4HX-125E:B
MT41K512M4HX-25:D Micron Technology Inc Check for Price DDR DRAM, 512MX4, CMOS, PBGA78, 9 X 11.50 MM, LEAD FREE, FBGA-78 K4B2G0446B-HCK00 vs MT41K512M4HX-25:D
K4B1G0446F-HCH90 Samsung Semiconductor Check for Price DDR DRAM, 256MX4, 0.255ns, CMOS, PBGA78, HALOGEN FREE AND ROHS COMPLIANT, FBGA-78 K4B2G0446B-HCK00 vs K4B1G0446F-HCH90
MT41J256M4HX-187EAT:E Micron Technology Inc Check for Price DDR DRAM, 256MX4, CMOS, PBGA78, 9 X 11.50 MM, LEAD FREE, FBGA-78 K4B2G0446B-HCK00 vs MT41J256M4HX-187EAT:E
MT41J256M4HX-125IT:E Micron Technology Inc Check for Price DDR DRAM, 256MX4, CMOS, PBGA78, 9 X 11.50 MM, LEAD FREE, FBGA-78 K4B2G0446B-HCK00 vs MT41J256M4HX-125IT:E
MT41J256M4JP-25EIT:F Micron Technology Inc Check for Price DDR DRAM, 256MX4, CMOS, PBGA78, 8 X 11.50 MM, LEAD FREE, FBGA-78 K4B2G0446B-HCK00 vs MT41J256M4JP-25EIT:F
NT5CB512M4BN-DG Nanya Technology Corporation Check for Price DDR DRAM, 512MX4, CMOS, PBGA78, 0.80 MM PITCH, ROHS COMPLIANT, WBGA-78 K4B2G0446B-HCK00 vs NT5CB512M4BN-DG
MT41J512M4THV-187E:F Micron Technology Inc Check for Price DDR DRAM, 256MX4, CMOS, PBGA78, 8 X 11.50 MM, LEAD FREE, FBGA-78 K4B2G0446B-HCK00 vs MT41J512M4THV-187E:F