There are no models available for this part yet.
Overview of K3N3V1000D-DC10 by Samsung Semiconductor
Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
- Distributor Offerings: ( 0 listings )
- Number of FFF Equivalents: ( 4 replacements )
- CAD Models: ( Request Part )
- Number of Functional Equivalents: ( 10 options )
- Part Data Attributes ( Available )
- Reference Designs: ( Not Available )
Available Datasheets
| Part # | Manufacturer | Description | Datasheet |
|---|---|---|---|
| ADC1038CIWM | Rochester Electronics LLC | ADC, Successive Approximation, 10-Bit, 1 Func, 8 Channel, Serial Access, PDSO20, SOP-20 | |
| ADC1005CCJ | Rochester Electronics LLC | ADC1005 - A/D Converter | |
| TDC1044AR4C | Rochester Electronics LLC | ADC, Proprietary Method, 4-Bit, 1 Func, 1 Channel, Parallel, 4 Bits Access, Bipolar, PQCC20, PLASTIC, LCC-20 |
CAD Models for K3N3V1000D-DC10 by Samsung Semiconductor
Part Data Attributes for K3N3V1000D-DC10 by Samsung Semiconductor
|
|
|
|---|---|
|
Rohs Code
|
No
|
|
Part Life Cycle Code
|
Obsolete
|
|
Ihs Manufacturer
|
SAMSUNG SEMICONDUCTOR INC
|
|
Part Package Code
|
DIP
|
|
Package Description
|
DIP, DIP40,.6
|
|
Pin Count
|
40
|
|
Reach Compliance Code
|
unknown
|
|
ECCN Code
|
EAR99
|
|
HTS Code
|
8542.32.00.71
|
|
Access Time-Max
|
100 ns
|
|
Additional Feature
|
ALL INPUTS AND OUTPUTS TTL COMPATIBLE
|
|
Alternate Memory Width
|
8
|
|
JESD-30 Code
|
R-PDIP-T40
|
|
JESD-609 Code
|
e0
|
|
Length
|
52.42 mm
|
|
Memory Density
|
4194304 bit
|
|
Memory IC Type
|
MASK ROM
|
|
Memory Width
|
16
|
|
Number of Functions
|
1
|
|
Number of Terminals
|
40
|
|
Number of Words
|
262144 words
|
|
Number of Words Code
|
256000
|
|
Operating Mode
|
ASYNCHRONOUS
|
|
Operating Temperature-Max
|
70 °C
|
|
Operating Temperature-Min
|
|
|
Organization
|
256KX16
|
|
Package Body Material
|
PLASTIC/EPOXY
|
|
Package Code
|
DIP
|
|
Package Equivalence Code
|
DIP40,.6
|
|
Package Shape
|
RECTANGULAR
|
|
Package Style
|
IN-LINE
|
|
Parallel/Serial
|
PARALLEL
|
|
Qualification Status
|
Not Qualified
|
|
Seated Height-Max
|
5.08 mm
|
|
Standby Current-Max
|
0.00003 A
|
|
Supply Current-Max
|
0.025 mA
|
|
Supply Voltage-Max (Vsup)
|
3.6 V
|
|
Supply Voltage-Min (Vsup)
|
3 V
|
|
Supply Voltage-Nom (Vsup)
|
3.3 V
|
|
Surface Mount
|
NO
|
|
Technology
|
CMOS
|
|
Temperature Grade
|
COMMERCIAL
|
|
Terminal Finish
|
TIN LEAD
|
|
Terminal Form
|
THROUGH-HOLE
|
|
Terminal Pitch
|
2.54 mm
|
|
Terminal Position
|
DUAL
|
|
Width
|
15.24 mm
|
Alternate Parts for K3N3V1000D-DC10
This table gives cross-reference parts and alternative options found for K3N3V1000D-DC10. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of K3N3V1000D-DC10, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| HY23V04200D-100 | MASK ROM, 256KX16, 100ns, CMOS, PDIP40, 0.600 INCH, PLASTIC, DIP-40 | SK Hynix Inc | K3N3V1000D-DC10 vs HY23V04200D-100 |
| KM23V4100D-10 | MASK ROM, 256KX16, 100ns, CMOS, PDIP40, 0.600 INCH, DIP-40 | Samsung Semiconductor | K3N3V1000D-DC10 vs KM23V4100D-10 |
| K3N3V6000D-DC10 | MASK ROM, 256KX16, 100ns, CMOS, PDIP40, 0.600 INCH, DIP-40 | Samsung Semiconductor | K3N3V1000D-DC10 vs K3N3V6000D-DC10 |
| KM23V4200D-10 | MASK ROM, 256KX16, 100ns, CMOS, PDIP40, 0.600 INCH, DIP-40 | Samsung Semiconductor | K3N3V1000D-DC10 vs KM23V4200D-10 |