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Transistors Power Field-Effect Transistors JANTXV2N6845

JANTXV2N6845
Description: Power Field-Effect Transistor, 4A I(D), 100V, 0.69ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, TO-39, 3 PIN

Overview of JANTXV2N6845 by Defense Logistics Agency

Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
  • Distributor Offerings: ( 0 listings )
  • Number of FFF Equivalents: ( 0 replacements )
  • CAD Models: ( Request Part )
  • Number of Functional Equivalents: ( 10 options )
  • Part Data Attributes ( Available )
  • Reference Designs: ( Not Available )

CAD Models for JANTXV2N6845 by Defense Logistics Agency
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Part Data Attributes for JANTXV2N6845 by Defense Logistics Agency
Parametric Data

JANTXV2N6845
Defense Logistics Agency
Buy Now
-
-
Part Life Cycle Code
Active
Ihs Manufacturer
DEFENSE LOGISTICS AGENCY
Package Description
HERMETIC SEALED, TO-39, 3 PIN
Reach Compliance Code
unknown
ECCN Code
EAR99
Additional Feature
AVALANCHE RATED
Avalanche Energy Rating (Eas)
115 mJ
Configuration
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
100 V
Drain Current-Max (ID)
4 A
Drain-source On Resistance-Max
0.69 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
TO-205AF
JESD-30 Code
O-MBCY-W3
Number of Elements
1
Number of Terminals
3
Operating Mode
ENHANCEMENT MODE
Package Body Material
METAL
Package Shape
ROUND
Package Style
CYLINDRICAL
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Polarity/Channel Type
P-CHANNEL
Pulsed Drain Current-Max (IDM)
16 A
Qualification Status
Qualified
Reference Standard
MIL-19500/563
Surface Mount
NO
Terminal Form
WIRE
Terminal Position
BOTTOM
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Transistor Application
SWITCHING
Transistor Element Material
SILICON
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  1. JANTXV2N6845
    Defense Logistics Agency
    Power Field-Effect Transistor, 4A I(D), 100V, 0.69ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, TO-39, 3 PIN
    VS

Alternate Parts for JANTXV2N6845

This table gives cross-reference parts and alternative options found for JANTXV2N6845. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of JANTXV2N6845, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
IRFF9222 Power Field-Effect Transistor, 2A I(D), 200V, 2.4ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF International Rectifier JANTXV2N6845 vs IRFF9222
IRFF9210R1 1.5A, 200V, 3.45ohm, P-CHANNEL, Si, POWER, MOSFET, TO-205AF, HERMETIC SEALED, METAL, TO-39, 3 PIN TT Electronics Power and Hybrid / Semelab Limited JANTXV2N6845 vs IRFF9210R1
IRFF9122 Power Field-Effect Transistor, 3.5A I(D), 100V, 0.8ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF International Rectifier JANTXV2N6845 vs IRFF9122
2N6845PBF Power Field-Effect Transistor, 2.5A I(D), 100V, 1.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF International Rectifier JANTXV2N6845 vs 2N6845PBF
IRFF9120PBF Power Field-Effect Transistor, 4A I(D), 100V, 0.69ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, TO-39, 3 PIN International Rectifier JANTXV2N6845 vs IRFF9120PBF
IRFF9123 3.5A, 80V, 0.8ohm, P-CHANNEL, Si, POWER, MOSFET, TO-205AF Rochester Electronics LLC JANTXV2N6845 vs IRFF9123
IRFF9122 3.5A, 100V, 0.8ohm, P-CHANNEL, Si, POWER, MOSFET, TO-205AF Intersil Corporation JANTXV2N6845 vs IRFF9122
IRFF9210PBF Power Field-Effect Transistor, 1.5A I(D), 200V, 3.45ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, TO-39, 3 PIN Infineon Technologies AG JANTXV2N6845 vs IRFF9210PBF
IRFF9123 Power Field-Effect Transistor, 3.5A I(D), 80V, 0.8ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF Harris Semiconductor JANTXV2N6845 vs IRFF9123
2N6845-JQRE1 4A, 100V, 0.69ohm, P-CHANNEL, Si, POWER, MOSFET, TO-205AF, HERMETIC SEALED, METAL, TO-39, 3 PIN TT Electronics Power and Hybrid / Semelab Limited JANTXV2N6845 vs 2N6845-JQRE1

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