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Manufacturer | Description | Price Range | Set Alert | Details |
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Infineon Technologies AG | Power Field-Effect Transistor, 8A I(D), 100V, 0.195ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, TO-205AF, 3 PIN | $33.6000 |
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Vishay Siliconix | Power Field-Effect Transistor, 8A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET, | $45.3578 / $58.1312 |
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International Rectifier | Power Field-Effect Transistor, 8A I(D), 100V, 0.195ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, TO-205AF, 3 PIN | $28.6470 / $58.1312 |
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General Electric Company | TRANSISTOR,MOSFET,N-CHANNEL,100V V(BR)DSS,8A I(D),TO-39 | $31.0343 / $58.1312 |
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RCA | TRANSISTOR,MOSFET,N-CHANNEL,100V V(BR)DSS,8A I(D),TO-39 | $31.0343 / $58.1312 |
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Intersil Corporation | 8A, 100V, 0.18ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF | $58.1312 |
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Harris Semiconductor | Power Field-Effect Transistor, 8A I(D), 100V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF | $58.1312 |
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CRC Industries UK Limited | TRANSISTOR,MOSFET,N-CHANNEL,100V V(BR)DSS,8A I(D),TO-39 | $58.1312 |
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Defense Logistics Agency | Power Field-Effect Transistor, 8A I(D), 100V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, |
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Omnirel Corp | Power Field-Effect Transistor, 8A I(D), 100V, 0.195ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205, HERMETIC SEALED, TO-205, 3 PIN |
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Microsemi Corporation | Small Signal Field-Effect Transistor, 8A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, TO-39, 3 PIN |
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Unitrode Corporation | Power Field-Effect Transistor, 8A I(D), 100V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, |
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Semicoa Semiconductors | Power Field-Effect Transistor, 8A I(D), 100V, 0.195ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, TO-39, 3 PIN |
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