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JANTXV2N6766T1 by:

Power Field-Effect Transistor, 30A I(D), 200V, 0.085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA,

Part Details for JANTXV2N6766T1 by Defense Logistics Agency

Overview of JANTXV2N6766T1 by Defense Logistics Agency

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Applications Telecommunications

Part Details for JANTXV2N6766T1

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JANTXV2N6766T1 Part Data Attributes

JANTXV2N6766T1 Defense Logistics Agency
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JANTXV2N6766T1 Defense Logistics Agency Power Field-Effect Transistor, 30A I(D), 200V, 0.085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA,
Part Life Cycle Code Active
Ihs Manufacturer DEFENSE LOGISTICS AGENCY
Reach Compliance Code unknown
ECCN Code EAR99
Avalanche Energy Rating (Eas) 500 mJ
Case Connection ISOLATED
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 200 V
Drain Current-Max (ID) 30 A
Drain-source On Resistance-Max 0.085 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-254AA
JESD-30 Code S-XSFM-P3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material UNSPECIFIED
Package Shape SQUARE
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 150 W
Pulsed Drain Current-Max (IDM) 120 A
Reference Standard MIL-19500
Surface Mount NO
Terminal Form PIN/PEG
Terminal Position SINGLE
Transistor Element Material SILICON

Alternate Parts for JANTXV2N6766T1

This table gives cross-reference parts and alternative options found for JANTXV2N6766T1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of JANTXV2N6766T1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
JANTX2N6766T1 Defense Logistics Agency Check for Price Power Field-Effect Transistor, 30A I(D), 200V, 0.085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, JANTXV2N6766T1 vs JANTX2N6766T1

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