Datasheets
JANTXV1N4500-1 by: Microsemi Corporation

Rectifier Diode, 1 Element, 0.3A, Silicon, DO-35

Part Details for JANTXV1N4500-1 by Microsemi Corporation

Overview of JANTXV1N4500-1 by Microsemi Corporation

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Applications Consumer Electronics Space Technology Aerospace and Defense Energy and Power Systems Transportation and Logistics Renewable Energy Automotive

Part Details for JANTXV1N4500-1

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JANTXV1N4500-1 Part Data Attributes

JANTXV1N4500-1 Microsemi Corporation
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JANTXV1N4500-1 Microsemi Corporation Rectifier Diode, 1 Element, 0.3A, Silicon, DO-35
Rohs Code No
Part Life Cycle Code Obsolete
Ihs Manufacturer MICROSEMI CORP
Package Description O-LALF-W2
Reach Compliance Code unknown
ECCN Code EAR99
HTS Code 8541.10.00.70
Additional Feature METALLURGICALLY BONDED
Application GENERAL PURPOSE
Case Connection ISOLATED
Configuration SINGLE
Diode Element Material SILICON
Diode Type RECTIFIER DIODE
Forward Voltage-Max (VF) 1.1 V
JEDEC-95 Code DO-35
JESD-30 Code O-LALF-W2
Non-rep Pk Forward Current-Max 4 A
Number of Elements 1
Number of Phases 1
Number of Terminals 2
Operating Temperature-Max 175 °C
Operating Temperature-Min -65 °C
Output Current-Max 0.3 A
Package Body Material GLASS
Package Shape ROUND
Package Style LONG FORM
Peak Reflow Temperature (Cel) NOT SPECIFIED
Qualification Status Not Qualified
Reference Standard MIL-19500/403
Reverse Current-Max 0.1 µA
Reverse Recovery Time-Max 0.006 µs
Surface Mount NO
Terminal Form WIRE
Terminal Position AXIAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED

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