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JANTXV1N3019B-1/TR by:

Zener Diode,

Part Details for JANTXV1N3019B-1/TR by Microsemi Corporation

Overview of JANTXV1N3019B-1/TR by Microsemi Corporation

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Applications Space Technology Aerospace and Defense Energy and Power Systems

Part Details for JANTXV1N3019B-1/TR

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JANTXV1N3019B-1/TR Part Data Attributes

JANTXV1N3019B-1/TR Microsemi Corporation
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JANTXV1N3019B-1/TR Microsemi Corporation Zener Diode,
Part Life Cycle Code Transferred
Ihs Manufacturer MICROSEMI CORP
Reach Compliance Code unknown
Additional Feature HIGH RELIABILITY, METALLURGICALLY BONDED
Case Connection ISOLATED
Configuration SINGLE
Diode Element Material SILICON
Diode Type ZENER DIODE
Dynamic Impedance-Max 6 Ω
JEDEC-95 Code DO-41
JESD-30 Code O-LALF-W2
Knee Impedance-Max 700 Ω
Number of Elements 1
Number of Terminals 2
Operating Temperature-Max 175 °C
Operating Temperature-Min -55 °C
Package Body Material GLASS
Package Shape ROUND
Package Style LONG FORM
Polarity UNIDIRECTIONAL
Power Dissipation-Max 1 W
Reference Standard MIL-PRF-19500
Reference Voltage-Nom 9.1 V
Reverse Current-Max 25 µA
Reverse Test Voltage 6.9 V
Surface Mount NO
Technology ZENER
Terminal Form WIRE
Terminal Position AXIAL
Voltage Temp Coeff-Max 6.643 mV/°C
Voltage Tol-Max 5%
Working Test Current 28 mA

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