Infineon Technologies AG |
Power Field-Effect Transistor, 3.5A I(D), 200V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, TO-39, 3 PIN |
$18.0000
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International Rectifier |
Power Field-Effect Transistor, 3.5A I(D), 200V, 0.92ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, TO-39, 3 PIN |
$3.8824 / $12.0000
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Intersil Corporation |
3.5A, 200V, 0.8ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF |
$10.5000
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Vishay Siliconix |
MOSFET Transistor, N-Channel, TO-39 |
$14.8000 / $18.0000
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Harris Semiconductor |
Power Field-Effect Transistor, 3.5A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF |
$18.0000
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Semicoa Semiconductors |
Power Field-Effect Transistor, 3.5A I(D), 200V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, TO-39, 3 PIN |
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Defense Logistics Agency |
Power Field-Effect Transistor, 3.5A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, |
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Fairchild Semiconductor Corporation |
Power Field-Effect Transistor, 3.5A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, |
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Microsemi Corporation |
Power Field-Effect Transistor, 3.5A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-39, |
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