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Overview of JANSR2N7524T1 by Infineon Technologies AG
Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
- Distributor Offerings: ( 0 listings )
- Number of FFF Equivalents: ( 0 replacements )
- CAD Models: ( Request Part )
- Number of Functional Equivalents: ( 0 options )
- Part Data Attributes ( Available )
- Reference Designs: ( Not Available )
Where used in Applications:
Industrial Automation
Motor control systems
CAD Models for JANSR2N7524T1 by Infineon Technologies AG
Part Data Attributes for JANSR2N7524T1 by Infineon Technologies AG
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Part Life Cycle Code
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Active
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Ihs Manufacturer
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INFINEON TECHNOLOGIES AG
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Package Description
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PACKAGE-3
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Reach Compliance Code
|
compliant
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ECCN Code
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EAR99
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Avalanche Energy Rating (Eas)
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890 mJ
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Case Connection
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ISOLATED
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Configuration
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SINGLE WITH BUILT-IN DIODE
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DS Breakdown Voltage-Min
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60 V
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Drain Current-Max (ID)
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45 A
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Drain-source On Resistance-Max
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0.017 Ω
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FET Technology
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METAL-OXIDE SEMICONDUCTOR
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JEDEC-95 Code
|
TO-254AA
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JESD-30 Code
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S-XSFM-P3
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Number of Elements
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1
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Number of Terminals
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3
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Operating Mode
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ENHANCEMENT MODE
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Package Body Material
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UNSPECIFIED
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Package Shape
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SQUARE
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Package Style
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FLANGE MOUNT
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Peak Reflow Temperature (Cel)
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NOT SPECIFIED
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Polarity/Channel Type
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P-CHANNEL
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Pulsed Drain Current-Max (IDM)
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180 A
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Qualification Status
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Qualified
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Reference Standard
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MIL-19500; RH - 100K Rad(Si)
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Surface Mount
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NO
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Terminal Form
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PIN/PEG
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Terminal Position
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SINGLE
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Time@Peak Reflow Temperature-Max (s)
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NOT SPECIFIED
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Transistor Application
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SWITCHING
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Transistor Element Material
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SILICON
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