JANSR2N7524T1
Description: Power Field-Effect Transistor, 45A I(D), 60V, 0.017ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETIC SEALED PACKAGE-3

Overview of JANSR2N7524T1 by Infineon Technologies AG

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  • Distributor Offerings: ( 0 listings )
  • Number of FFF Equivalents: ( 0 replacements )
  • CAD Models: ( Request Part )
  • Number of Functional Equivalents: ( 0 options )
  • Part Data Attributes ( Available )
  • Reference Designs: ( Not Available )
Where used in Applications: Industrial Automation Motor control systems

CAD Models for JANSR2N7524T1 by Infineon Technologies AG
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Part Data Attributes for JANSR2N7524T1 by Infineon Technologies AG

JANSR2N7524T1
Infineon Technologies AG
-
-
Part Life Cycle Code
Active
Ihs Manufacturer
INFINEON TECHNOLOGIES AG
Package Description
PACKAGE-3
Reach Compliance Code
compliant
ECCN Code
EAR99
Avalanche Energy Rating (Eas)
890 mJ
Case Connection
ISOLATED
Configuration
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
60 V
Drain Current-Max (ID)
45 A
Drain-source On Resistance-Max
0.017 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
TO-254AA
JESD-30 Code
S-XSFM-P3
Number of Elements
1
Number of Terminals
3
Operating Mode
ENHANCEMENT MODE
Package Body Material
UNSPECIFIED
Package Shape
SQUARE
Package Style
FLANGE MOUNT
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Polarity/Channel Type
P-CHANNEL
Pulsed Drain Current-Max (IDM)
180 A
Qualification Status
Qualified
Reference Standard
MIL-19500; RH - 100K Rad(Si)
Surface Mount
NO
Terminal Form
PIN/PEG
Terminal Position
SINGLE
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Want to compare parts?
  1. JANSR2N7524T1
    Infineon Technologies AG
    Power Field-Effect Transistor, 45A I(D), 60V, 0.017ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETIC SEALED PACKAGE-3
    VS

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