There are no models available for this part yet.
Overview of JANSR2N7432U by Infineon Technologies AG
Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
- Distributor Offerings: ( 1 listing )
- Number of FFF Equivalents: ( 0 replacements )
- CAD Models: ( Request Part )
- Number of Functional Equivalents: ( 0 options )
- Part Data Attributes ( Available )
- Reference Designs: ( Not Available )
Where used in Applications:
Consumer Electronics
Audio and Video Systems
Price & Stock for JANSR2N7432U by Infineon Technologies AG
Part # | Manufacturer | Description | Stock | Price | Buy | ||
---|---|---|---|---|---|---|---|
DISTI #
JANSR2N7432U
|
Avnet Americas | Transistor MOSFET N-Channel 100V 51A 3-Pin SMD-2 - Bulk (Alt: JANSR2N7432U) Min Qty: 25 Package Multiple: 1 Container: Bulk | 0 |
|
RFQ |
CAD Models for JANSR2N7432U by Infineon Technologies AG
Part Data Attributes for JANSR2N7432U by Infineon Technologies AG
|
|
---|---|
Rohs Code
|
No
|
Part Life Cycle Code
|
Obsolete
|
Ihs Manufacturer
|
INFINEON TECHNOLOGIES AG
|
Package Description
|
CHIP CARRIER, R-CBCC-N3
|
Reach Compliance Code
|
compliant
|
ECCN Code
|
EAR99
|
Additional Feature
|
HIGH RELIABILITY, RADIATION HARDENED
|
Avalanche Energy Rating (Eas)
|
500 mJ
|
Case Connection
|
DRAIN
|
Configuration
|
SINGLE WITH BUILT-IN DIODE
|
DS Breakdown Voltage-Min
|
100 V
|
Drain Current-Max (ID)
|
51 A
|
Drain-source On Resistance-Max
|
0.045 Ω
|
FET Technology
|
METAL-OXIDE SEMICONDUCTOR
|
JESD-30 Code
|
R-CBCC-N3
|
JESD-609 Code
|
e0
|
Number of Elements
|
1
|
Number of Terminals
|
3
|
Operating Mode
|
ENHANCEMENT MODE
|
Package Body Material
|
CERAMIC, METAL-SEALED COFIRED
|
Package Shape
|
RECTANGULAR
|
Package Style
|
CHIP CARRIER
|
Polarity/Channel Type
|
N-CHANNEL
|
Pulsed Drain Current-Max (IDM)
|
204 A
|
Qualification Status
|
Qualified
|
Reference Standard
|
MIL-19500/664
|
Surface Mount
|
YES
|
Terminal Finish
|
TIN LEAD
|
Terminal Form
|
NO LEAD
|
Terminal Position
|
BOTTOM
|
Transistor Application
|
SWITCHING
|
Transistor Element Material
|
SILICON
|
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