| Manufacturer | Description | Price Range | Set Alert | Details |
|---|---|---|---|---|
| International Rectifier | Power Field-Effect Transistor, 6.5A I(D), 100V, 0.35ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, CERAMIC, MODIFIED TO-39, 3 PIN | $324.0000 / $697.4606 |
|
View Details |
| Microchip Technology Inc |
|
View Details | ||
| Microsemi Corporation | Power Field-Effect Transistor, 6.5A I(D), 100V, 0.35ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, MODIFIED TO-39, 3 PIN |
|
View Details | |
| Infineon Technologies AG | Power Field-Effect Transistor, 6.5A I(D), 100V, 0.35ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, CERAMIC, MODIFIED TO-39, 3 PIN |
|
View Details | |
| Defense Logistics Agency | Power Field-Effect Transistor, 6.5A I(D), 100V, 0.35ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, CERAMIC, MODIFIED TO-39, 3 PIN |
|
View Details |