Part Details for JANS2N4150S by VPT Components
Overview of JANS2N4150S by VPT Components
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Consumer Electronics
Audio and Video Systems
Price & Stock for JANS2N4150S
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
JANS2N4150S
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Avnet Americas | Trans GP BJT NPN 70V 10A 3-Pin TO-39 Tray - Bulk (Alt: JANS2N4150S) Min Qty: 25 Package Multiple: 1 Container: Bulk | 0 |
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$49.4466 / $57.5526 | Buy Now |
DISTI #
JANS2N4150S
|
TTI | Bipolar Transistors - BJT MIL-PRF-19500/394 Min Qty: 25 Package Multiple: 1 Container: Bulk | Americas - 0 |
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$56.2900 | Buy Now |
Part Details for JANS2N4150S
JANS2N4150S CAD Models
JANS2N4150S Part Data Attributes
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JANS2N4150S
VPT Components
Buy Now
Datasheet
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JANS2N4150S
VPT Components
Small Signal Bipolar Transistor,
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Rohs Code | No | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | VPT COMPONENTS | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
HTS Code | 8541.29.00.95 | |
Case Connection | COLLECTOR | |
Collector Current-Max (IC) | 10 A | |
Collector-Base Capacitance-Max | 350 pF | |
Collector-Emitter Voltage-Max | 70 V | |
Configuration | SINGLE | |
DC Current Gain-Min (hFE) | 20 | |
JEDEC-95 Code | TO-5 | |
JESD-30 Code | O-MBCY-W3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Temperature-Max | 200 °C | |
Operating Temperature-Min | -65 °C | |
Package Body Material | METAL | |
Package Shape | ROUND | |
Package Style | CYLINDRICAL | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | NPN | |
Power Dissipation Ambient-Max | 1 W | |
Power Dissipation-Max (Abs) | 15 W | |
Qualification Status | Qualified | |
Reference Standard | MIL-19500 | |
Surface Mount | NO | |
Terminal Form | WIRE | |
Terminal Position | BOTTOM | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON | |
Turn-off Time-Max (toff) | 2000 ns | |
Turn-on Time-Max (ton) | 550 ns | |
VCEsat-Max | 2.5 V |