JAN2N6250
Description: Power Bipolar Transistor, 10A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon, TO-204, Metal, 2 Pin,

Overview of JAN2N6250 by New England Semiconductor

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  • Distributor Offerings: ( 0 listings )
  • Number of FFF Equivalents: ( 0 crosses )
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  • Number of Functional Equivalents: ( 0 crosses )
  • Part Data Attributes ( Available )
  • Reference Designs: ( Not Available )
Where used in Applications: Consumer Electronics Audio and Video Systems

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Part Data Attributes for JAN2N6250 by New England Semiconductor

JAN2N6250
New England Semiconductor
-
-
Part Life Cycle Code
Transferred
Ihs Manufacturer
NEW ENGLAND SEMICONDUCTOR
Reach Compliance Code
unknown
ECCN Code
EAR99
Case Connection
COLLECTOR
Collector Current-Max (IC)
10 A
Collector-Emitter Voltage-Max
300 V
Configuration
SINGLE
DC Current Gain-Min (hFE)
8
JEDEC-95 Code
TO-204
JESD-30 Code
O-MBFM-P2
Number of Elements
1
Number of Terminals
2
Package Body Material
METAL
Package Shape
ROUND
Package Style
FLANGE MOUNT
Polarity/Channel Type
NPN
Qualification Status
Not Qualified
Reference Standard
MIL
Surface Mount
NO
Terminal Form
PIN/PEG
Terminal Position
BOTTOM
Transistor Element Material
SILICON
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  1. JAN2N6250
    New England Semiconductor
    Power Bipolar Transistor, 10A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon, TO-204, Metal, 2 Pin,
    VS

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