Datasheets
JAN1N6112US by:

Trans Voltage Suppressor Diode, 500W, 13.7V V(RWM), Bidirectional, 1 Element, Silicon

Part Details for JAN1N6112US by Microchip Technology Inc

Overview of JAN1N6112US by Microchip Technology Inc

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Applications Energy and Power Systems Transportation and Logistics Renewable Energy Automotive

Price & Stock for JAN1N6112US

Part # Distributor Description Stock Price Buy
DISTI # 61AJ7161
Newark 25.1 V Bi-Directional Tvs B-Body Sq. Melf Rohs Compliant: Yes |Microchip JAN1N6112US RoHS: Compliant Min Qty: 100 Package Multiple: 1 Date Code: 0 Container: Bulk 0
  • 100 $14.5600
  • 500 $14.0000
$14.0000 / $14.5600 Buy Now
DISTI # JAN1N6112US
Avnet Americas Diode TVS Single Bi-Directional 13.7V 500W 2-Pin D-5B T/R - Bulk (Alt: JAN1N6112US) RoHS: Not Compliant Min Qty: 100 Package Multiple: 1 Lead time: 25 Weeks, 0 Days Container: Bulk 0
  • 1 $15.6800
  • 100 $14.5600
  • 500 $14.0000
$14.0000 / $15.6800 Buy Now
DISTI # JAN1N6112US/TR
Avnet Americas Diode TVS Single Bi-Directional 13.7V 500W 2-Pin D-5B T/R - Tape and Reel (Alt: JAN1N6112US/TR) RoHS: Not Compliant Min Qty: 100 Package Multiple: 1 Lead time: 25 Weeks, 0 Days Container: Reel 0
RFQ
DISTI # 494-JAN1N6112US
Mouser Electronics ESD Protection Diodes / TVS Diodes 25.1 V Bi-Directional TVS RoHS: Not Compliant 0
  • 100 $15.6800
  • 500 $14.5600
$14.5600 / $15.6800 Order Now
DISTI # JAN1N6112US
Microchip Technology Inc Bi-Directional TVS _ B-Body Sq. Melf, Projected EOL: 2049-02-05 RoHS: Compliant pbFree: Yes 0

Alternates Available
  • 1 $15.6800
$15.6800 Buy Now
Future Electronics   RoHS: Not Compliant pbFree: No Min Qty: 100 Package Multiple: 1 0
  • 100 $14.0000
$14.0000 Buy Now
Onlinecomponents.com   RoHS: Compliant 0
  • 25 $29.1200
  • 50 $17.9200
  • 75 $14.1900
  • 100 $13.9000
$13.9000 / $29.1200 Buy Now
NAC Bi-Directional TVS, B-Body Sq. Melf RoHS: Compliant Min Qty: 22 Package Multiple: 1 0
  • 1 $16.0000
  • 100 $14.7400
  • 500 $14.0000
  • 800 $13.6600
$13.6600 / $16.0000 Buy Now
Master Electronics   RoHS: Compliant 0
  • 25 $29.1200
  • 50 $17.9200
  • 75 $14.1900
  • 100 $13.9000
$13.9000 / $29.1200 Buy Now

Part Details for JAN1N6112US

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JAN1N6112US Part Data Attributes

JAN1N6112US Microchip Technology Inc
Buy Now Datasheet
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JAN1N6112US Microchip Technology Inc Trans Voltage Suppressor Diode, 500W, 13.7V V(RWM), Bidirectional, 1 Element, Silicon
Rohs Code No
Part Life Cycle Code Active
Ihs Manufacturer MICROCHIP TECHNOLOGY INC
Package Description MELF-2
Reach Compliance Code compliant
Factory Lead Time 25 Weeks
Additional Feature HIGH RELIABILITY
Breakdown Voltage-Min 17.1 V
Clamping Voltage-Max 26.4 V
Configuration SINGLE
Diode Element Material SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code O-LELF-R2
JESD-609 Code e0
Non-rep Peak Rev Power Dis-Max 500 W
Number of Elements 1
Number of Terminals 2
Operating Temperature-Max 175 °C
Operating Temperature-Min -55 °C
Package Body Material GLASS
Package Shape ROUND
Package Style LONG FORM
Polarity BIDIRECTIONAL
Power Dissipation-Max 2 W
Qualification Status Qualified
Reference Standard MIL-19500
Rep Pk Reverse Voltage-Max 13.7 V
Reverse Current-Max 1 µA
Reverse Test Voltage 13.7 V
Surface Mount YES
Technology AVALANCHE
Terminal Finish TIN LEAD
Terminal Form WRAP AROUND
Terminal Position END

Alternate Parts for JAN1N6112US

This table gives cross-reference parts and alternative options found for JAN1N6112US. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of JAN1N6112US, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
1N6112US Trans Voltage Suppressor Diode, 500W, 13.7V V(RWM), Bidirectional, 1 Element, Silicon, Bkc Semiconductors Inc JAN1N6112US vs 1N6112US
JANTXV1N6112US Trans Voltage Suppressor Diode, 500W, 14V V(RWM), Bidirectional, 1 Element, Silicon Sensitron Semiconductors JAN1N6112US vs JANTXV1N6112US
JAN1N6112US Trans Voltage Suppressor Diode, 500W, 13.7V V(RWM), Unidirectional, 1 Element, Silicon, HERMETIC SEALED, SURFACE MOUNT PACKAGE-2 Micross Components JAN1N6112US vs JAN1N6112US
JAN1N6112US Trans Voltage Suppressor Diode, 500W, 13.7V V(RWM), Bidirectional, 1 Element, Silicon, Bkc Semiconductors Inc JAN1N6112US vs JAN1N6112US
JANTX1N6112US Trans Voltage Suppressor Diode, 500W, 13.7V V(RWM), Bidirectional, 1 Element, Silicon Microchip Technology Inc JAN1N6112US vs JANTX1N6112US
JANTXV1N6112US Trans Voltage Suppressor Diode, 500W, 13.7V V(RWM), Bidirectional, 1 Element, Silicon Microchip Technology Inc JAN1N6112US vs JANTXV1N6112US
JANTX1N6112US Trans Voltage Suppressor Diode, 500W, 14V V(RWM), Bidirectional, 1 Element, Silicon Sensitron Semiconductors JAN1N6112US vs JANTX1N6112US
JANS1N6112US Trans Voltage Suppressor Diode, 500W, Bidirectional, 1 Element, Silicon Microchip Technology Inc JAN1N6112US vs JANS1N6112US
JANTXV1N6112US Trans Voltage Suppressor Diode, 500W, 13.7V V(RWM), Unidirectional, 1 Element, Silicon, HERMETIC SEALED, SURFACE MOUNT PACKAGE-2 Micross Components JAN1N6112US vs JANTXV1N6112US
1N6112US Trans Voltage Suppressor Diode, 500W, 13.7V V(RWM), Bidirectional, 1 Element, Silicon Microchip Technology Inc JAN1N6112US vs 1N6112US
Part Number Description Manufacturer Compare
JAN1N6112US Trans Voltage Suppressor Diode, 500W, 13.7V V(RWM), Unidirectional, 1 Element, Silicon, HERMETIC SEALED, SURFACE MOUNT PACKAGE-2 Micross Components JAN1N6112US vs JAN1N6112US
JANTXV1N6112US Trans Voltage Suppressor Diode, 500W, 13.7V V(RWM), Bidirectional, 1 Element, Silicon Microchip Technology Inc JAN1N6112US vs JANTXV1N6112US
JANS1N6112US Trans Voltage Suppressor Diode, 500W, 14V V(RWM), Bidirectional, 1 Element, Silicon, Bkc Semiconductors Inc JAN1N6112US vs JANS1N6112US
JANTXV1N6112US Trans Voltage Suppressor Diode, 500W, 14V V(RWM), Bidirectional, 1 Element, Silicon Sensitron Semiconductors JAN1N6112US vs JANTXV1N6112US
JANS1N6112US Trans Voltage Suppressor Diode, 500W, Bidirectional, 1 Element, Silicon Microchip Technology Inc JAN1N6112US vs JANS1N6112US
1N6112US Trans Voltage Suppressor Diode, 500W, 13.7V V(RWM), Bidirectional, 1 Element, Silicon Microchip Technology Inc JAN1N6112US vs 1N6112US
JANTX1N6112US Trans Voltage Suppressor Diode, 500W, 13.7V V(RWM), Bidirectional, 1 Element, Silicon Microchip Technology Inc JAN1N6112US vs JANTX1N6112US
JAN1N6112US Trans Voltage Suppressor Diode, 500W, 13.7V V(RWM), Bidirectional, 1 Element, Silicon, Bkc Semiconductors Inc JAN1N6112US vs JAN1N6112US
JANTX1N6112US Trans Voltage Suppressor Diode, 500W, 14V V(RWM), Bidirectional, 1 Element, Silicon Sensitron Semiconductors JAN1N6112US vs JANTX1N6112US
1N6112US Trans Voltage Suppressor Diode, 500W, 13.7V V(RWM), Bidirectional, 1 Element, Silicon, Bkc Semiconductors Inc JAN1N6112US vs 1N6112US

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