Transistors
IXTQ48N20T
Description: Power Field-Effect Transistor, 48A I(D), 200V, 0.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, TO-3P, 3 PIN

Overview of IXTQ48N20T by IXYS Corporation

Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Where used in Applications: Energy and Power Systems Transportation and Logistics Renewable Energy Automotive

Price & Stock for IXTQ48N20T by IXYS Corporation

Part # Manufacturer Description Stock Price Buy
DISTI # 747-IXTQ48N20T
Mouser Electronics MOSFETs 48 Amps 200V 50 Rds RoHS: Compliant 0
  • 300 $3.0200
$3.0200 Order Now
Future Electronics   RoHS: Compliant pbFree: Yes Min Qty: 30 Package Multiple: 30 Container: Tube 0
Tube
  • 30 $2.5700
$2.5700 Buy Now
DISTI # IXTQ48N20T
TTI MOSFETs 48 Amps 200V 50 Rds Min Qty: 300 Package Multiple: 30 Container: Tube Americas - 0
  • 300 $2.9900
$2.9900 Buy Now
DISTI # IXTQ48N20T
TME Transistor: N-MOSFET, unipolar, 200V, 48A, 250W, TO3P, 130ns Min Qty: 1 0
  • 1 $3.9900
  • 3 $3.5900
  • 10 $3.1800
  • 30 $2.8500
$2.8500 / $3.9900 RFQ

CAD Models for IXTQ48N20T by IXYS Corporation
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Part Data Attributes for IXTQ48N20T by IXYS Corporation

IXTQ48N20T
IXYS Corporation
-
-
Pbfree Code
Yes
Rohs Code
Yes
Part Life Cycle Code
Transferred
Ihs Manufacturer
IXYS CORP
Part Package Code
TO-3P
Package Description
PLASTIC, TO-3P, 3 PIN
Pin Count
3
Reach Compliance Code
compliant
ECCN Code
EAR99
Additional Feature
AVALANCHE RATED
Avalanche Energy Rating (Eas)
500 mJ
Case Connection
DRAIN
Configuration
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
200 V
Drain Current-Max (ID)
48 A
Drain-source On Resistance-Max
0.05 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
JESD-30 Code
R-PSFM-T3
Number of Elements
1
Number of Terminals
3
Operating Mode
ENHANCEMENT MODE
Operating Temperature-Max
175 °C
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (Abs)
250 W
Pulsed Drain Current-Max (IDM)
130 A
Qualification Status
Not Qualified
Surface Mount
NO
Terminal Finish
Pure Tin (Sn)
Terminal Form
THROUGH-HOLE
Terminal Position
SINGLE
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Want to compare parts?
  1. IXTQ48N20T
    IXYS Corporation
    Power Field-Effect Transistor, 48A I(D), 200V, 0.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, TO-3P, 3 PIN
    VS

Alternate Parts for IXTQ48N20T

This table gives cross-reference parts and alternative options found for IXTQ48N20T. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IXTQ48N20T, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
SFF50N20/3 Power Field-Effect Transistor, 50A I(D), 200V, 0.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3, Solid State Devices Inc (SSDI) IXTQ48N20T vs SFF50N20/3
IXTP48N20T Power Field-Effect Transistor, 48A I(D), 200V, 0.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, PLASTIC PACKAGE-3 IXYS Corporation IXTQ48N20T vs IXTP48N20T
IXTA48N20T Power Field-Effect Transistor, 48A I(D), 200V, 0.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AA, PLASTIC PACKAGE-3 IXYS Corporation IXTQ48N20T vs IXTA48N20T
IXTH48N20 Power Field-Effect Transistor, 48A I(D), 200V, 0.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, TO-247AD, 3 PIN Littelfuse Inc IXTQ48N20T vs IXTH48N20
IXTQ48N20T Power Field-Effect Transistor, Littelfuse Inc IXTQ48N20T vs IXTQ48N20T
IXTP48N20T Power Field-Effect Transistor, Littelfuse Inc IXTQ48N20T vs IXTP48N20T

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