Part Details for IXTP3N100P by Littelfuse Inc
Overview of IXTP3N100P by Littelfuse Inc
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (8 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
Price & Stock for IXTP3N100P
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
03AH1673
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Newark | Disc Mosfet N-Ch Std-Polar To-220Ab/Fp/ Tube |Littelfuse IXTP3N100P RoHS: Not Compliant Min Qty: 300 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
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$2.2400 / $3.0000 | Buy Now |
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DISTI #
IXTP3N100P-ND
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DigiKey | MOSFET N-CH 1000V 3A TO220AB Min Qty: 1 Lead time: 57 Weeks Container: Tube |
263 In Stock |
|
$2.1032 / $4.6900 | Buy Now |
Part Details for IXTP3N100P
IXTP3N100P CAD Models
IXTP3N100P Part Data Attributes
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IXTP3N100P
Littelfuse Inc
Buy Now
Datasheet
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Compare Parts:
IXTP3N100P
Littelfuse Inc
Power Field-Effect Transistor, 3A I(D), 1000V, 4.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | LITTELFUSE INC | |
| Package Description | FLANGE MOUNT, R-PSFM-T3 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | LITTELFUSE | |
| Additional Feature | AVALANCHE RATED | |
| Avalanche Energy Rating (Eas) | 200 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 1000 V | |
| Drain Current-Max (ID) | 3 A | |
| Drain-source On Resistance-Max | 4.8 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-220AB | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 125 W | |
| Pulsed Drain Current-Max (IDM) | 6 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | Matte Tin (Sn) | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IXTP3N100P
This table gives cross-reference parts and alternative options found for IXTP3N100P. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IXTP3N100P, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IXTP3N100P | Power Field-Effect Transistor, 3A I(D), 1000V, 4.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, PLASTIC, TO-220, 3 PIN | IXYS Corporation | IXTP3N100P vs IXTP3N100P |
| 2SK1659-S | Power Field-Effect Transistor, 3A I(D), 900V, 5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | Fuji Electric Co Ltd | IXTP3N100P vs 2SK1659-S |
| BUK456-1000B127 | TRANSISTOR 3.1 A, 1000 V, 5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, FET General Purpose Power | NXP Semiconductors | IXTP3N100P vs BUK456-1000B127 |
| IXTH3N100P | Power Field-Effect Transistor, 3A I(D), 1000V, 4.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, PLASTIC, TO-247, 3 PIN | IXYS Corporation | IXTP3N100P vs IXTH3N100P |
| BUK456-1000B,127 | 3.1A, 1000V, 5ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB | NXP Semiconductors | IXTP3N100P vs BUK456-1000B,127 |
| IXTA3N100P | Power Field-Effect Transistor, 3A I(D), 1000V, 4.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, TO-263, 3 PIN | IXYS Corporation | IXTP3N100P vs IXTA3N100P |
| IXTH3N100P | Power Field-Effect Transistor, 3A I(D), 1000V, 4.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, TO-247, 3 PIN | Littelfuse Inc | IXTP3N100P vs IXTH3N100P |
| IXTA3N100P | Power Field-Effect Transistor, 3A I(D), 1000V, 4.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN | Littelfuse Inc | IXTP3N100P vs IXTA3N100P |