Part Details for IXTP260N055T2 by Littelfuse Inc
Overview of IXTP260N055T2 by Littelfuse Inc
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for IXTP260N055T2
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
03AH1669
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Newark | Discmsft Nchtrenchgate-Gen2 To-220Ab/Fp/ Tube |Littelfuse IXTP260N055T2 RoHS: Not Compliant Min Qty: 300 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
|
$3.3700 / $4.5100 | Buy Now |
|
DISTI #
IXTP260N055T2-ND
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DigiKey | MOSFET N-CH 55V 260A TO220AB Min Qty: 1 Lead time: 27 Weeks Container: Tube |
67 In Stock |
|
$3.0141 / $6.2100 | Buy Now |
Part Details for IXTP260N055T2
IXTP260N055T2 CAD Models
IXTP260N055T2 Part Data Attributes
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IXTP260N055T2
Littelfuse Inc
Buy Now
Datasheet
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Compare Parts:
IXTP260N055T2
Littelfuse Inc
Power Field-Effect Transistor,
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | LITTELFUSE INC | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | LITTELFUSE | |
| Additional Feature | AVALANCHE RATED | |
| Avalanche Energy Rating (Eas) | 600 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 55 V | |
| Drain Current-Max (ID) | 260 A | |
| Drain-source On Resistance-Max | 0.0033 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 215 pF | |
| JEDEC-95 Code | TO-220AB | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 480 W | |
| Pulsed Drain Current-Max (IDM) | 780 A | |
| Surface Mount | NO | |
| Terminal Finish | Matte Tin (Sn) | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IXTP260N055T2
This table gives cross-reference parts and alternative options found for IXTP260N055T2. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IXTP260N055T2, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IXTA260N055T2 | Power Field-Effect Transistor, | Littelfuse Inc | IXTP260N055T2 vs IXTA260N055T2 |
| IXTQ280N055T | Power Field-Effect Transistor, 280A I(D), 55V, 0.0032ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, TO-3P, 3 PIN | IXYS Corporation | IXTP260N055T2 vs IXTQ280N055T |
| IXTA240N055T7 | Power Field-Effect Transistor, 240A I(D), 55V, 0.0036ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263, TO-263, 7 PIN | IXYS Corporation | IXTP260N055T2 vs IXTA240N055T7 |
| IXTA240N055T | Power Field-Effect Transistor, 240A I(D), 55V, 0.0036ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263, TO-263, 6 PIN | IXYS Corporation | IXTP260N055T2 vs IXTA240N055T |
| IXTA260N055T2-7 | Power Field-Effect Transistor, | Littelfuse Inc | IXTP260N055T2 vs IXTA260N055T2-7 |
| IXTP260N055T2 | Power Field-Effect Transistor, 260A I(D), 55V, 0.0033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, PLASTIC, TO-220, 3 PIN | IXYS Corporation | IXTP260N055T2 vs IXTP260N055T2 |
| IXTH260N055T2 | Power Field-Effect Transistor, | Littelfuse Inc | IXTP260N055T2 vs IXTH260N055T2 |
| IXTH280N055T | Power Field-Effect Transistor, 280A I(D), 55V, 0.0032ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, PLASTIC, TO-247, 3 PIN | IXYS Corporation | IXTP260N055T2 vs IXTH280N055T |
| IXTV270N055T2S | Power Field-Effect Transistor, 270A I(D), 55V, 0.003ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, PLUS220SMD, 3 PIN | IXYS Corporation | IXTP260N055T2 vs IXTV270N055T2S |
| IXTP240N055T | Power Field-Effect Transistor, 240A I(D), 55V, 0.0036ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN | IXYS Corporation | IXTP260N055T2 vs IXTP240N055T |