Datasheets
IXTP160N04T2 by:

Power Field-Effect Transistor, 160A I(D), 40V, 0.005ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, PLASTIC, TO-220, 3 PIN

Part Details for IXTP160N04T2 by IXYS Corporation

Overview of IXTP160N04T2 by IXYS Corporation

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Applications Consumer Electronics Energy and Power Systems Renewable Energy

Price & Stock for IXTP160N04T2

Part # Distributor Description Stock Price Buy
DISTI # 747-IXTP160N04T2
Mouser Electronics MOSFETs 160 Amps 40V RoHS: Compliant 0
  • 1 $2.9100
  • 10 $2.4200
  • 100 $1.9200
  • 250 $1.7700
  • 500 $1.6000
  • 1,000 $1.3700
  • 2,500 $1.3000
  • 5,000 $1.2600
$1.2600 / $2.9100 Order Now
DISTI # IXTP160N04T2
TME Transistor: N-MOSFET, unipolar, 40V, 160A, 250W, TO220AB, 40ns Min Qty: 1 0
  • 1 $1.9700
  • 3 $1.7700
  • 10 $1.5600
  • 50 $1.4100
$1.4100 / $1.9700 RFQ

Part Details for IXTP160N04T2

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IXTP160N04T2 Part Data Attributes

IXTP160N04T2 IXYS Corporation
Buy Now Datasheet
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IXTP160N04T2 IXYS Corporation Power Field-Effect Transistor, 160A I(D), 40V, 0.005ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, PLASTIC, TO-220, 3 PIN
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Transferred
Ihs Manufacturer IXYS CORP
Part Package Code TO-220AB
Package Description TO-220, 3 PIN
Pin Count 3
Reach Compliance Code compliant
ECCN Code EAR99
Additional Feature AVALANCHE RATED
Avalanche Energy Rating (Eas) 600 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 40 V
Drain Current-Max (ID) 160 A
Drain-source On Resistance-Max 0.005 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
JESD-609 Code e1
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 250 W
Pulsed Drain Current-Max (IDM) 400 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON

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