Part Details for IXTN550N055T2 by IXYS Corporation
Overview of IXTN550N055T2 by IXYS Corporation
- Distributor Offerings: (5 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
Price & Stock for IXTN550N055T2
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
|
DISTI #
747-IXTN550N055T2
|
Mouser Electronics | MOSFET Modules GigaMOS Trench T2 HiperFET PWR MOSFET RoHS: Compliant | 205 |
|
$32.1900 / $43.3100 | Buy Now |
|
|
Future Electronics | RoHS: Compliant pbFree: Yes Min Qty: 10 Package Multiple: 10 Container: Tube | 0Tube |
|
$34.6100 | Buy Now |
|
DISTI #
IXTN550N055T2
|
TTI | MOSFET Modules GigaMOS Trench T2 HiperFET PWR MOSFET Min Qty: 300 Package Multiple: 10 Container: Tube | Americas - 0 |
|
$30.1300 / $31.3400 | Buy Now |
|
DISTI #
IXTN550N055T2
|
TME | Module, single transistor, 55V, 550A, SOT227B, screw, Idm: 1.65kA Min Qty: 1 | 0 |
|
$37.0000 / $46.5700 | RFQ |
|
|
New Advantage Corporation | MOSFET MOD.550A 55V N-CH SOT227B TRENCHT2 RoHS: Compliant Min Qty: 1 Package Multiple: 1 | 19 |
|
$70.1100 / $75.1100 | Buy Now |
Part Details for IXTN550N055T2
IXTN550N055T2 CAD Models
IXTN550N055T2 Part Data Attributes
|
|
IXTN550N055T2
IXYS Corporation
Buy Now
Datasheet
|
Compare Parts:
IXTN550N055T2
IXYS Corporation
Power Field-Effect Transistor, 550A I(D), 55V, 0.0013ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, MINI BLOC, 4 PIN
|
| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | IXYS CORP | |
| Package Description | PLASTIC, MINI BLOC, 4 PIN | |
| Pin Count | 4 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Additional Feature | AVALANCHE RATED | |
| Avalanche Energy Rating (Eas) | 3000 mJ | |
| Case Connection | ISOLATED | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 55 V | |
| Drain Current-Max (ID) | 550 A | |
| Drain-source On Resistance-Max | 0.0013 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PUFM-X4 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 4 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 940 W | |
| Pulsed Drain Current-Max (IDM) | 1650 A | |
| Qualification Status | Not Qualified | |
| Reference Standard | UL RECOGNIZED | |
| Surface Mount | NO | |
| Terminal Finish | Nickel (Ni) | |
| Terminal Form | UNSPECIFIED | |
| Terminal Position | UPPER | |
| Time@Peak Reflow Temperature-Max (s) | 10 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |