There are no models available for this part yet.
Overview of IXTJ4N150 by IXYS Corporation
Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
- Distributor Offerings: ( 4 listings )
- Number of FFF Equivalents: ( 0 replacements )
- CAD Models: ( Request Part )
- Number of Functional Equivalents: ( 0 options )
- Part Data Attributes ( Available )
- Reference Designs: ( Not Available )
Where used in Applications:
Energy and Power Systems
Renewable Energy
Price & Stock for IXTJ4N150 by IXYS Corporation
| Part # | Manufacturer | Description | Stock | Price | Buy | ||
|---|---|---|---|---|---|---|---|
|
DISTI #
747-IXTJ4N150
|
Mouser Electronics | MOSFETs High Voltage Power MOSFET RoHS: Compliant | 0 |
|
$8.7400 / $11.4700 | Order Now | |
| Future Electronics | MOSFET High Voltage Power MOSFET RoHS: Compliant pbFree: Yes Min Qty: 300 Package Multiple: 30 Container: Tube | 0Tube |
|
$7.6900 / $7.8800 | Buy Now | ||
|
DISTI #
IXTJ4N150
|
TTI | MOSFETs High Voltage Power MOSFET Min Qty: 300 Package Multiple: 30 Container: Tube | Americas - 0 |
|
$7.2300 / $7.5200 | Buy Now | |
|
DISTI #
IXTJ4N150
|
TME | Transistor: N-MOSFET, unipolar, 1.5kV, 2.5A, 110W, ISO247™, 900ns Min Qty: 1 | 0 |
|
$7.8700 / $11.3900 | RFQ |
CAD Models for IXTJ4N150 by IXYS Corporation
Part Data Attributes for IXTJ4N150 by IXYS Corporation
|
|
|
|---|---|
|
Rohs Code
|
Yes
|
|
Part Life Cycle Code
|
Transferred
|
|
Ihs Manufacturer
|
IXYS CORP
|
|
Package Description
|
PLASTIC, ISO TO-247, 3 PIN
|
|
Reach Compliance Code
|
compliant
|
|
ECCN Code
|
EAR99
|
|
Additional Feature
|
AVALANCHE RATED
|
|
Avalanche Energy Rating (Eas)
|
350 mJ
|
|
Case Connection
|
ISOLATED
|
|
Configuration
|
SINGLE WITH BUILT-IN DIODE
|
|
DS Breakdown Voltage-Min
|
1500 V
|
|
Drain Current-Max (ID)
|
2.5 A
|
|
Drain-source On Resistance-Max
|
6 Ω
|
|
FET Technology
|
METAL-OXIDE SEMICONDUCTOR
|
|
JEDEC-95 Code
|
TO-247
|
|
JESD-30 Code
|
R-PSFM-T3
|
|
Number of Elements
|
1
|
|
Number of Terminals
|
3
|
|
Operating Mode
|
ENHANCEMENT MODE
|
|
Operating Temperature-Max
|
150 °C
|
|
Package Body Material
|
PLASTIC/EPOXY
|
|
Package Shape
|
RECTANGULAR
|
|
Package Style
|
FLANGE MOUNT
|
|
Polarity/Channel Type
|
N-CHANNEL
|
|
Power Dissipation-Max (Abs)
|
110 W
|
|
Pulsed Drain Current-Max (IDM)
|
12 A
|
|
Reference Standard
|
UL RECOGNIZED
|
|
Surface Mount
|
NO
|
|
Terminal Form
|
THROUGH-HOLE
|
|
Terminal Position
|
SINGLE
|
|
Transistor Application
|
SWITCHING
|
|
Transistor Element Material
|
SILICON
|
Related Parts for IXTJ4N150
-
STW4N150Power Field-Effect Transistors
-
SAK-TC1793F-512F270EFMicrocontrollers
-
ISL6401IBSwitching Regulator or Controllers
-
BSS123Small Signal Field-Effect Transistors
-
DPG10P400PJRectifier Diodes
-
SI8274AB1-IS1Other Analog ICs
-
TL072IDTOperational Amplifiers
-
B32654A7334K000Fixed Capacitors
-
MAX803SQ308T1GPower Management Circuits